Abstract: A transfer wheel for grouping rod-shaped or tubular objects is disclosed, consisting of at least two segments (1), (2) that can be controlled independently of each other. The segments are filled in a cyclic operation by way of a toothed belt (5) filled with the objects, wherein missing objects (gaps) on the toothed belt (5) are skipped, so that each segment (1) is completely filled with the objects. The filled segment (2) is rotated with fast advancement to the dispensing wheel (4), to which the grouped objects are dispensed again. The segments (1), (2) alternately pick up and dispense the objects.

Abstract: A computer-implemented method for performing recipe evaluation is provided. The computer-implemented method includes integrating a plurality of data sources into a single recipe report card framework. The recipe report card framework includes an editor for interacting with the plurality of data sources. The computer-implemented method also includes displaying a plurality of graphical displays. Each graphical display of the plurality of graphical displays is configured to present a signal parameter of a set of signal parameters for at least a substrate. The computer-implemented method further includes providing a plurality of criteria for each of the set of signal parameters. The computer-implemented method yet also includes providing a plurality of ranges for the each of the set of signal parameters. The computer-implemented method yet further includes providing an expert guide, which is configured to provide guidance in analyzing a recipe.

Abstract: A computer-implemented method for performing recipe evaluation is provided. The computer-implemented method includes integrating a plurality of data sources into a single recipe report card framework. The recipe report card framework includes an editor for interacting with the plurality of data sources. The computer-implemented method also includes displaying a plurality of graphical displays. Each graphical display of the plurality of graphical displays is configured to present a signal parameter of a set of signal parameters for at least a substrate. The computer-implemented method further includes providing a plurality of criteria for each of the set of signal parameters. The computer-implemented method yet also includes providing a plurality of ranges for the each of the set of signal parameters. The computer-implemented method yet further includes providing an expert guide, which is configured to provide guidance in analyzing a recipe.

Abstract: Methods for removing black silicon or black silicon carbide from a plasma-exposed surface of an upper electrode of a plasma processing chamber are provided. The methods include forming a plasma using a gas composition containing a fluorine-containing gas, and removing the black silicon or black silicon carbide from the surface with the plasma. The methods can also remove black silicon or black silicon carbide from surfaces of the components in the chamber in addition to the upper electrode.

Abstract: Methods for forming a protective polymeric coating on a silicon or silicon-carbide electrode of a plasma processing chamber are provided. The polymeric coating provides protection to the underlying surface of the electrode with respect to exposure to constituents of plasma and gaseous reactants. The methods can be performed during a process of cleaning the chamber, or during a process for etching a semiconductor substrate in the chamber.

Abstract: Methods of measuring gas flow rates in a gas supply system for supplying gas to a plasma processing chamber are provided. In a differential flow method, a flow controller is operated at different set flow rates, and upstream orifice pressures are measured for the set flow rates at ambient conditions. The measured orifice pressures are referenced to a secondary flow verification method that generates corresponding actual gas flow rates for the different set flow rates. The upstream orifice pressures can be used as a differential comparison for subsequent orifice pressure measurements taken at any temperature condition of the chamber. In an absolute flow method, some parameters of a selected gas and orifice are predetermined, and other parameters of the gas are measured while the gas is being flowed from a flow controller at a set flow rate through an orifice. In this method, any flow controller set point can be flowed at any time and at any chamber condition, such as during plasma processing operations.

Abstract: Methods for removing black silicon or black silicon carbide from a plasma-exposed surface of an upper electrode of a plasma processing chamber are provided. The methods include forming a plasma using a gas composition containing a fluorine-containing gas, and removing the black silicon or black silicon carbide from the surface with the plasma. The methods can also remove black silicon or black silicon carbide from surfaces of the components in the chamber in addition to the upper electrode.

Abstract: Methods for forming a protective polymeric coating on a silicon or silicon-carbide electrode of a plasma processing chamber are provided. The polymeric coating provides protection to the underlying surface of the electrode with respect to exposure to constituents of plasma and gaseous reactants. The methods can be performed during a process of cleaning the chamber, or during a process for etching a semiconductor substrate in the chamber.