Abstract: An ion beam neutralization system, often referred to as a plasma bridge neutralizer (PBN), as part of an ion beam (etch) system. The system utilizes an improved filament thermo-electron emitter PBN design, that when utilized in a particular method of operation, greatly extends filament life and minimizes variation in neutralizer operating parameters for long periods of operation. The PBN includes a solenoidal electromagnetic that produces an axial magnetic field within the PBN and a magnetic concentrator that facilitates the alignment of the magnetic field and inhibits stray fields. The PBN can readily provide a filament lifetime of at least 500 hours.

Abstract: The presently disclosed ion sources include one or more electromagnets for changing the distribution of plasma within a discharge space of an ion source. At least one of the electromagnets is oriented about an outer periphery of a tubular sidewall of the ion source and changes a distribution of the plasma in a peripheral region of the discharge space.

Abstract: The presently disclosed ion sources include one or more electromagnets for changing the distribution of plasma within a discharge space of an ion source. At least one of the electromagnets is oriented about an outer periphery of a tubular sidewall of the ion source and changes a distribution of the plasma in a peripheral region of the discharge space.

Abstract: The present invention relates to a sputter deposition system and to methods of use thereof for processing substrates using planetary sputter deposition methods. The sputter deposition system includes a deposition chamber having an azimuthal axis. A rotatable member is situated in the chamber and includes a plurality of magnetrons provided thereon. Each magnetron includes a corresponding one of a plurality of sputtering targets. The rotatable member is configured to position each of the magnetrons to direct sputtered material from the corresponding one of the sputtering targets to a deposition zone defined in the deposition chamber. A transport mechanism is situated in the deposition chamber and includes an arm rotatable about the azimuthal axis. A substrate holder is attached to the arm of the transport mechanism and supports the substrate as the arm rotates the substrate holder to intersect the deposition zone for depositing sputtered material on the substrate.

Abstract: A target of a thickness, which varies across its radius according to the amount of material required to be sputtered, is supported in a nest in a chamber of a sputter coating apparatus. Positioned behind the nest is a rotating magnet carrier having arranged thereon in a closed loop a permanant or electro magnetic strip, but preferably a flexible permanently magnetic material, with portions near the rim of the target and portions near, but not on, the target center about which the magnet rotates. The magnetic loop is transversely polarized with one pole toward the target rim and one toward the target center so that its field will enclose the rim of the target within a magnetic tunnel that traps a plasma over the target. Lumped magnets across the center from the strip support the plasma near the center so as to cause some sputtering at the target center. Other lumped magnets adjacent the strip help sharpen the field so that a desired distribution of sputtering can be achieved.

Abstract: A re-entrant plug structure is disclosed which extends inside a processing chamber containing an ionized plasma in proximity to the plasma to physically displace the ionized plasma and selectively controllably vary concentration of ionized gas particles over the surface of a wafer to be sputter etched which is supported inside the chamber. The variation of concentration of the ionized plasma allows the selectively controllable variation of sputter etch rates on the surface of the wafer. The re-entrant plug structure may be formed as part of the enclosure cover of the processing chamber or may be a separable moveable unit which is inserted into the plasma through an opening in the processing chamber. The re-entrant plug may be of various lengths, diameters and shapes to displace and shape the ionized plasma.

Abstract: A target of a thickness, which varies across its radius according to the amount of material required to be sputtered, is supported in a nest in a chamber of a sputter coating apparatus. Positioned behind the nest is a rotating magnet carrier having arranged thereon in a closed loop a permanent or electro magnetic strip, but preferably a flexible permanently magnetic material, with portions near the rim of the target and portions near, but not on, the target center about which the magnet rotates. The magnetic loop is transversely polarized with one pole toward the target rim and one toward the target center so that its field will enclose the rim of the target within a magnetic tunnel that traps a plasma over the target. Lumped magnets across the center from the strip support the plasma near the center so as to cause some sputtering at the target center. Other lumped magnets adjacent the strip help sharpen the field so that a desired distribution of sputtering can be achieved.

Abstract: A sputter coating apparatus displays set and alternative machine parameters, entered or calculated from entered or measured data, for selection by the operator. The apparatus performs a sputter coating process to produce sputter coated articles in accordance with the selected machine parameters. Process parameters familiar to the person creating the process, such as desired coating thickness and desired deposition rate, may be entered by the operator. Measured data such as actual coating thickness at a plurality of points on a previously processed wafer may be entered by an operator or automatically measured from a wafer. Alternative machine parameters such as target sputtering power may be entered by an operator or calculated from entered process parameters or measured data. The operator selects and initiates a process in accordance with the selections by entering commands.

Abstract: A bias sputter coating apparatus is provided with a cathode target assembly having a central electrode which is maintainable at an adjustable voltage level which is negative with respect to the chamber anode but positive with respect to the cathode voltage and the bias voltage on the substrate. The apparatus is used to manufacture sputter coated articles such as semiconductor wafers. The method provides that the voltage on the central electrode is adjusted to a level which improves the ion flux distribution uniformity on the substrate. The electrode voltage is generally optimized in the range of from -8 volts to -20 volts.

Abstract: A magnetron sputtering method and apparatus employing a one-piece annular target having a concave continuously smooth surface with an inwardly facing portion close to and surrounding the outer edge of a stepped wafer provides a sputtering surface with areas facing the differently facing surfaces of the wafer steps. Two concentric erosion zones on the target surface are independently energized at different electrical parameter values by synchronizing the power applied to the single target with switched activation of plasmas overlying the respective target regions which define the erosion zones. The electrical parameters and the geometry are established so as to uniformly coat the differently facing surfaces of the stepped wafer. During part of the duty cycle during which each target region is energized, parameters may be measured. Such parameters may be those which vary with changes in geometry as for example may be due to target erosion.