Abstract: The invention includes a shallow trench isolation structure having a trench formed in the Si substrate and having an upper surface, a liner layer formed in the trench overlying the upper surface of the trench, a gettering material layer formed on the liner layer; and a filler oxide formed on the gettering material layer The gettering material layer inhibits the diffusion of metallic contaminants from the filler oxide into the surrounding silicon substrate regions

Abstract: A merged BiCMOS device 10 having a bipolar transistor 60 and a PMOS transistor 64 formed in the same well region 18. Bipolar transistor 60 is comprised of an emitter electrode 30, base region 26, and collector region formed by well region 18. Emitter electrode 30 is separated from base region 26 by thick oxide 24. Tungsten-silicide layer 32 covers emitter electrode 30. PMOS transistor 64 comprises source/drain regions 52 and 52a, gate electrode 40, and gate oxide 36. PMOS transistor 64 may optionally comprise LDD regions 44. Source/drain region 52a is in contact with base region 26. If desired, the emitter electrode 30 and gate electrode 40 may be silicided.