Abstract: Boundary scan testing of devices such as printed circuit boards and multi chip modules, when the needed circuits have not been provided on IC chips by the manufacturer, is accomplished with a diagnostic and testing integrated circuit that performs a boundary scan external to available integrated circuitry with the addition of programmable input/output parameters. Programmable boundary scan functions include input or output functions, enable or disable cells, and shift register orders. The boundary scan function programming will allow each boundary scan cell to be defined as an input/output boundary scan cell. The enable cell programmability would provide the capability of shutting down unused cells in a given application to program proper data flow and to conserve power.

Abstract: The I/O ports of a packaged IC includes a plurality of optical conduits in the package adjacent electro-optical transmitters and receivers throughout the die spaced from the periphery of the die. The method of assembling the die in the package includes using optical transmitters on the die to align the top of the package and the optical conduits to the die which was previously mounted in the base of the package.

Abstract: The I/O ports of a packaged IC includes a plurality of optical conduits in the package adjacent electro-optical transmitters and receivers throughout the die spaced from the periphery of the die. The method of assembling the die in the package includes using optical transmitters on the die to align the top of the package and the optical conduits to the die which was previously mounted in the base of the package.

Abstract: An integrated circuit having active devices in electro-optical conversion material regions and single crystal silicon regions which are in a polycrystalline silicon support. The electro-optical conversion material regions are separated from the polycrystalline silicon by a containment layer. The method includes forming trenches in a wafer of electro-optical conversion material, covering the trenches with a containment layer and overfilling with polycrystalline silicon, removing material to expose polycrystalline silicon in the trenches and converting exposed portions of the polycrystalline silicon to single crystal silicon.