Patents by Inventor Robert J. Baeten

Robert J. Baeten has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9362879
    Abstract: A power amplifier (PA) system with PA gain correction is disclosed. The PA system includes a PA having a bias voltage input; and electrothermal feedback circuitry coupled to the bias voltage input. The electrothermal feedback circuitry is configured to receive thermal feedback generated by the PA and maintain a substantially constant PA gain by automatically changing a bias voltage level at the bias voltage input based upon the thermal feedback.
    Type: Grant
    Filed: September 12, 2014
    Date of Patent: June 7, 2016
    Assignee: RF Micro Devices, Inc.
    Inventors: Miaofu Ding, Robert J. Baeten
  • Patent number: 9281850
    Abstract: The present invention relates to an adaptable RF impedance translation circuit that includes a first group of inductive elements cascaded in series between an input and an output without any series switching elements, a second group of inductive elements cascaded in series, and a group of switching elements that are capable of electrically coupling the first group of inductive elements to the second group of inductive elements. Further, the adaptable RF impedance translation circuit includes at least one variable shunt capacitance circuit electrically coupled between a common reference and at least one connection node in the adaptable RF impedance translation circuit, which includes control circuitry to select either an OFF state or an ON state associated with each of the switching elements and to select a capacitance associated with each variable shunt capacitance circuit to control impedance translation characteristics of the adaptable RF impedance translation circuit.
    Type: Grant
    Filed: September 8, 2015
    Date of Patent: March 8, 2016
    Assignee: RF Micro Devices, Inc.
    Inventors: Marcelo J. Franco, David C. Dening, Robert J. Baeten
  • Patent number: 9160276
    Abstract: The present invention relates to an adaptable RF impedance translation circuit that includes a first group of inductive elements cascaded in series between an input and an output without any series switching elements, a second group of inductive elements cascaded in series, and a group of switching elements that are capable of electrically coupling the first group of inductive elements to the second group of inductive elements. Further, the adaptable RF impedance translation circuit includes at least one variable shunt capacitance circuit electrically coupled between a common reference and at least one connection node in the adaptable RF impedance translation circuit, which includes control circuitry to select either an OFF state or an ON state associated with each of the switching elements and to select a capacitance associated with each variable shunt capacitance circuit to control impedance translation characteristics of the adaptable RF impedance translation circuit.
    Type: Grant
    Filed: May 2, 2013
    Date of Patent: October 13, 2015
    Assignee: RF Micro Devices, Inc.
    Inventors: Marcelo J. Franco, David C. Dening, Robert J. Baeten
  • Publication number: 20150077185
    Abstract: A power amplifier (PA) system with PA gain correction is disclosed. The PA system includes a PA having a bias voltage input; and electrothermal feedback circuitry coupled to the bias voltage input. The electrothermal feedback circuitry is configured to receive thermal feedback generated by the PA and maintain a substantially constant PA gain by automatically changing a bias voltage level at the bias voltage input based upon the thermal feedback.
    Type: Application
    Filed: September 12, 2014
    Publication date: March 19, 2015
    Inventors: Miaofu Ding, Robert J. Baeten
  • Patent number: 8472910
    Abstract: The present invention relates to an adaptable RF impedance translation circuit that includes a first group of inductive elements cascaded in series between an input and an output without any series switching elements, a second group of inductive elements cascaded in series, and a group of switching elements that are capable of electrically coupling the first group of inductive elements to the second group of inductive elements. Further, the adaptable RF impedance translation circuit includes at least one variable shunt capacitance circuit electrically coupled between a common reference and at least one connection node in the adaptable RF impedance translation circuit, which includes control circuitry to select either an OFF state or an ON state associated with each of the switching elements and to select a capacitance associated with each variable shunt capacitance circuit to control impedance translation characteristics of the adaptable RE impedance translation circuit.
    Type: Grant
    Filed: July 6, 2009
    Date of Patent: June 25, 2013
    Assignee: RF Micro Devices, Inc.
    Inventors: Marcelo J. Franco, David C. Dening, Robert J. Baeten
  • Patent number: 8004269
    Abstract: The present invention relates to a radio frequency (RF) power measurement circuit that measures delivered power to a load. The RF power measurement circuit includes a measurement RF transmission line coupled to the load, and measurement and power calculation circuitry coupled to either end of the measurement RF transmission line to measure an RF input signal feeding the measurement RF transmission line and to measure an RF output signal fed from the measurement RF transmission line to the load. The measurement and power calculation circuitry uses the measured RF input and output signals to calculate and provide a delivered power signal that is indicative of the delivered power to the load.
    Type: Grant
    Filed: July 29, 2008
    Date of Patent: August 23, 2011
    Assignee: RF Micro Devices, Inc.
    Inventors: Marcelo J. Franco, Robert J. Baeten
  • Patent number: 5153469
    Abstract: A biasing network for use in conjunction with a mixer employing field effect transistors which provides for minimum conversion loss over a range of process and temperature conditions. The biasing circuit includes a first field effect transistor having a small gate periphery which is configured as a current source, a second or reference field effect transistor having a gate periphery substantially equal to the gate peripheries of the transistors in the mixer to which the biasing circuit is providing DC biasing voltages and a voltage divider which is functional in defining operating conditions for the reference transistor.
    Type: Grant
    Filed: April 25, 1991
    Date of Patent: October 6, 1992
    Assignee: Rockwell International Corporation
    Inventors: Brian E. Petted, Jeffrey P. Ortiz, Leo J. Wilz, Robert J. Baeten