Abstract: There is provided an avalanche photodiode array that includes a plurality of avalanche photodiodes. Each avalanche photodiode in the array includes a stack of active photodiode materials. The stack of active photodiode materials includes a first electrical contact layer, a second electrical contact layer; an absorber material layer and an avalanche material layer each disposed between the first electrical contact layer and the second electrical contact layer; and an optical interface surface to the avalanche photodiode. The optical interface surface consists of an exposed surface of the first electrical contact layer, arranged for incident external radiation to directly enter the first electrical contact layer. Each avalanche photodiode stack of active photodiode materials is laterally isolated from the other avalanche photodiodes in the photodiode array.

Abstract: There is provided an avalanche photodiode array that includes a plurality of avalanche photodiodes. Each avalanche photodiode in the array includes a stack of active photodiode materials. The stack of active photodiode materials includes a first electrical contact layer, a second electrical contact layer; an absorber material layer and an avalanche material layer each disposed between the first electrical contact layer and the second electrical contact layer; and an optical interface surface to the avalanche photodiode. The optical interface surface consists of an exposed surface of the first electrical contact layer, arranged for incident external radiation to directly enter the first electrical contact layer. Each avalanche photodiode stack of active photodiode materials is laterally isolated from the other avalanche photodiodes in the photodiode array.

Abstract: The present invention provides a reactor for preparing thin films of compound semiconductors for photovoltaic devices. The reactor includes a chamber that has a bottom surface that, in some locations, has protrusions that contact the bottom surface of the substrate having the compound semiconductor to provide uniform heating and cooling of the substrate. Interior walls of the chamber can also be lined with high thermal conductivity portions and low thermal conductivity portions interposed between high thermal conductivity portions.

Abstract: Layer transfer approaches are described to take advantage of large area, thin inorganic foils formed onto a porous release layer. In particular, since the inorganic foils can be formed from ceramics and/or crystalline materials that do not bend a large amount, approaches are described to provide for gradual pulling along an edge to separate the foil from a holding surface along a curved surface designed to not excessively bend the foil such that the foil is not substantially damaged in the transfer process. Apparatuses are described to perform the transfer with a rocking motion or with a rotating cylindrical surface. Furthermore, stabilization of porous release layers can improve the qualities of resulting inorganic foils formed on the release layer. In particular, flame treatments can provide improved release layer properties, and the deposition of an interpenetrating stabilization composition can be deposited using CVD to stabilize a porous layer.

Abstract: An apparatus for allowing an individual to simply assemble a transparent cylindrical conduit sectioned track system which guides a self propelled toy vehicle through this track system. A self propelled toy vehicle designed to run securely through transparent cylindrical conduit track prohibiting the toy vehicle from falling off of the track, an easy to assemble the transparent cylindrical sections, and an interlocking structure to ensure the fitting of the track sections are secure enough to remain intact for normal use. A portable means for an individual to carry said self-propelled toy vehicle and the various shaped transparent cylindrical track sections.

Abstract: An atmospheric pressure wafer processing system for delivering at least one gas is provided, having an exhaust control feedback system that utilizes sensors to measure the pressure within the system and adjusts control units to maintain the desired set pressures within the system. In particular the sensors measure the small differential pressures inside a muffle, and specifically the load, bypass center and unload sections of the muffle, relative to the chase ambient pressure. Controlling the muffle pressures directly within the atmospheric system yields a more stable pressure balance for processing wafers less subject to changes in the external environment and allows for compensation of varying input gas flows as occurs when the supply pressure to the system may vary. This system and method of pressure control is particularly advantageous for chemical vapor deposition application yielding improved process repeatability over an extended period of runtime.

Abstract: An atmospheric pressure wafer processing system for delivering at least one gas is provided, having an exhaust control feedback system that utilizes sensors to measure the pressure within the system and adjusts control units to maintain the desired set pressures within the system. In particular the sensors measure the small differential pressures inside a muffle, and specifically the load, bypass center and unload sections of the muffle, relative to the chase ambient pressure. Controlling the muffle pressures directly within the atmospheric system yields a more stable pressure balance for processing wafers less subject to changes in the external environment and allows for compensation of varying input gas flows as occurs when the supply pressure to the system may vary. This system and method of pressure control is particularly advantageous for chemical vapor deposition application yielding improved process repeatability over an extended period of runtime.

Abstract: A chemical vapor deposition (CVD) system is provided for processing a substrate 110. The system 100 includes a heated muffle 115, a chamber 120 having an injector assembly 130 for introducing chemical vapor to process the substrate 110, and a belt 105 for moving the substrate through the muffle and chamber. The belt 105 has an oxidation-resistant coating 175 to reduce formation of deposits thereon. The coating 175 is particularly useful for resisting formation of chromium oxides on belts made from a chromium-containing alloy. In one embodiment, the oxidation-resistant coating 175 comprises a securely-adhered oxide layer 185 that is substantially free of transition metals. Preferably, the oxidation-resistant coating 175 comprises aluminum oxide. More preferably, the coating 175 comprises an aluminum oxide layer 185 securely adhered over a nickel aluminide layer 180.

Abstract: A chemical vapor deposition (CVD) system is provided for processing a substrate 110. The system 100 includes a heated muffle 115, a chamber 120 having an injector assembly 130 for introducing chemical vapor to process the substrate 110, and a belt 105 for moving the substrate through the muffle and chamber. The belt 105 has an oxidation-resistant coating 175 to reduce formation of deposits thereon. The coating 175 is particularly useful for resisting formation of chromium oxides on belts made from a chromium-containing alloy. In one embodiment, the oxidation-resistant coating 175 comprises a securely-adhered oxide layer 185 that is substantially free of transition metals. Preferably, the oxidation-resistant coating 175 comprises aluminum oxide. More preferably, the coating 175 comprises an aluminum oxide layer 185 securely adhered over a nickel aluminide layer 180.

Abstract: A wafer processing system for delivering a processing gas and an inert gas to a chamber which includes a CVD processing region having a plurality of gas flow paths for conveying the gases to the chamber and exhausting them from the chamber. A flow control system is coupled to each of the exhaust gas flow paths and each of the process gas exhaust flow paths are separately controlled to maintain a constant rate of flow within each of the gas flow paths, independent of the accumulation of deposition byproducts. Utilization of a self-cleaning orifice allows a pressure differential measurement in a process exhaust line to measure flow. The wafer processing system is provided with load and unload regions surrounding the chamber(s), each having additional inert gas exhaust flow paths.

Abstract: A reverse idler shaft and washer assembly particularly suited for use in a compound transmission includes a lubricating washer having at least one notch for collecting and directing lubricating oil through a reverse idler gear bearing such that lubrication passageways are eliminated from the reverse idler shaft. The lubricating washer includes an annular region capable of supporting a clamping load through the inner race of the reverse idler gear bearing to resist rotation while allowing the outer race and the associated reverse idler gear to rotate freely.

Abstract: An improved fluid operated (X-Y) shifting mechanism (100) is provided for shifting gears or clutches of a mechanical change gear transmission. Mechanism (100) features a shift finger (14) that is secured to a shaft (6) that is moved in an axial (Y--Y) direction by at least one piston (28) and is pivoted in a substantially transverse (X--X) direction by at least one piston (12) having a bore (10) in which an end of shaft (6) is supported and operative to rotate relative thereto to substantially lessen rotational inertia in encountered shifting in the (X--X) direction particularly during cold weather.

Abstract: A method of manufacturing a hollow spark plug body having a cylindrical central portion (28), a first end portion (10) of smaller circular radial cross-section and a second end portion of non-circular radial cross-section, e.g. hexagonal, and of smaller maximum diameter than the central portion by cold extruding the both end portions. The second end portion is extruded in two stages, the first involving the formation of a recess in one end of a cylindrical blank, the second involving extrusion the blank between a die (19) and a mandrel (21) which moves with the blank during extrusion.

Abstract: The invention relates to a process wherein A a heat curable froth or foamable mixture of polyurethane reaction components is applied to the back of a fabric, B the coated fabric is heated to form a gelled, tack-free and storable foam-backed fabric and C the fabric is shaped and cured using a hot molding process. The polyurethane formulation contains a hydroxy functional ester of an acrylic or alkyl acrylic acid and a free radical initiator.