Abstract: An interconnect is disclosed with enhanced immunity of electrical conductivity to defects. The interconnect includes a material with charge carriers having topological surface states. Also disclosed is a method for fabricating such interconnects. Also disclosed is an integrated circuit including such interconnects. Also disclosed is a gated electronic device including a material with charge carriers having topological surface states.

Abstract: An interconnect is disclosed with enhanced immunity of electrical conductivity to defects. The interconnect includes a material with charge carriers having topological surface states. Also disclosed is a method for fabricating such interconnects. Also disclosed is an integrated circuit including such interconnects. Also disclosed is a gated electronic device including a material with charge carriers having topological surface states.

Abstract: An interconnect is disclosed with enhanced immunity of electrical conductivity to defects. The interconnect includes a material with charge carriers having topological surface states. Also disclosed is a method for fabricating such interconnects. Also disclosed is an integrated circuit including such interconnects. Also disclosed is a gated electronic device including a material with charge carriers having topological surface states.

Abstract: An interconnect is disclosed with enhanced immunity of electrical conductivity to defects. The interconnect includes a material with charge carriers having topological surface states. Also disclosed is a method for fabricating such interconnects. Also disclosed is an integrated circuit including such interconnects. Also disclosed is a gated electronic device including a material with charge carriers having topological surface states.

Abstract: The present applicants have discovered a method for making thin films comprising tantalum oxide that enhances the dielectric constant with or without TiO.sub.2 doping. Specifically, applicants have discovered sputtering Ta.sub.2 O.sub.5 in an oxygen-rich ambient at a temperature in excess of 450.degree. C. and preferably in excess of 550.degree. C., produces a new crystalline phase thin film having enhanced dielectric properties.

Abstract: Applicant has discovered that aliovalently doped zinc-indium-oxide where In is 40-75% of the metal elements can achieve electrical conductivity comparable to wide band-gap semiconductors presently in use while exhibiting enhanced transparency in both the visible and infrared. The material can be doped to resistivity of less than 1 milliohm-cm by small quantifies of aliovalent dopants, such as tetravalent atoms. It can be deposited on glass substrates in amorphous and polycrystalline films.

Abstract: A decrease in the temperature coefficient of the dielectric constant (TCK) for polycrystalline ceramics of Barium Strontium Titanate (BST) through admixture with tetragonal bronze type Barium Strontium Niobate (BSN) has been found. For Ba.sub.0.5 Sr.sub.0.5 TiO.sub.3 ceramics, a 10% admixture of BSN decreases TCK by a factor of 2.5 at 10 MHz, with negligible degradation of the dielectric loss. A 37.5% admixture of BSN decreases TCK by a factor of more than 100. Dielectric constants for the mixtures are in the range of 200-500.

Abstract: Applicants have discovered that films of conductively doped GaInO.sub.3 grown on substrates by pulsed laser deposition have conductivity comparable to conventional wide band-gap transparent conductors while exhibiting superior light transmission, particularly in the green and blue wavelength regions of the visible spectrum. Substrate temperatures ranged from room temperature to 350.degree. C. in an ambient containing oxygen at partial pressure in the range 0.1 mTorr to 100 mTorr. The preferred laser source was an excimer laser operating in the deep ultraviolet.

Abstract: Applicants have discovered that films of conductively doped GaInO.sub.3 grown on substrates by sputter deposition have conductivity comparable to conventional wide band-gap transparent conductors while exhibiting superior light transmission, particularly in the green and blue wavelength regions of the visible spectrum. Substrate temperatures ranged from 100.degree. C. to 550.degree. C. in an argon-oxygen ambient of total pressure 4 mTorr to 20 mTorr with an optimal oxygen partial pressure in the range 0.5 to 2 mTorr.

Abstract: Material comprising an effective amount of a novel intermetallic bulk superconductor compound is disclosed. The compound has the composition LnNi.sub.2 B.sub.2 C, with Ln being Y or a rare earth (atomic number 57-71), preferably Tm, Er, Ho or Ln. A compound of composition XPt.sub.2 B.sub.2 C, with X=Y and/or La, is also a superconductor.

Abstract: A novel intermetallic superconductor with surprisingly high transition temperature is disclosed. Exemplary of the novel superconductor is material of overall composition Y.sub.1.5 Pd.sub.4.5 B.sub.4. A bulk sample of that composition has T.sub.c (onset) of 22.6K, with about 0.5 volume % of the sample being superconducting.

Abstract: Applicant has discovered that aliovalently doped gallium-indium-oxide (GaInO.sub.3) can achieve electrical conductivity comparable to wide band-gap semiconductors presently in use while exhibiting enhanced transparency and improved index matching. The material can be doped to resistivity of less than 10 milliohm-cm by small quantities of aliovalent dopants, such as tetravalent atoms. It has a refractive index of about 1.6 and can be deposited on glass substrates in polycrystalline films.

Abstract: A new class of high temperature superconductive oxides is disclosed. An exemplary member of the class has nominal composition Pb.sub.2 Sr.sub.2 Y.sub.0.5 Ca.sub.0.5 Cu.sub.3 O.sub.8 and has a transition temperature T.sub.c (onset) of about 79K.

Abstract: Novel superconductive oxides are disclosed. The oxides all have layered perovskite-like crystal structure and manifest superconductivity above about 77K. An exemplary material has composition Bi.sub.2.2 Sr.sub.2 Ca.sub.0.8 Cu.sub.2 O.sub.8. Other materials are described by the nominal formula X.sub.2+x M.sub.n-x Cu.sub.n-1 O.sub.2+2n+x/2.+-..delta., where X typically is Bi, or Bi together with Pb or other appropriate substituent, M is one or more divalent ion or mixture of monovalent and trivalent ion, n is an integer greater than 3, x=p/q, where p and q are integers and p<q, and .delta. is less than 0.5. Associated with the inventive compounds typically is a superlattice structure, with T.sub.c of the compound typically being correlated with the superlattice spacing. The inventive compounds are typically relatively ductile.

Abstract: Novel superconductive Pb-substituted oxides are disclosed. The oxides all have layered perovskite-like crystal structure, and manifest superconductivity (R=o) above about 77K. The materials are described by the nominal formula X.sub.2+x M.sub.3-x Cu.sub.2 O.sub.8.+-..delta., where X is Bi and Pb, M is Sr and Ca, 0.ltoreq..times..ltoreq.0.3, 0.ltoreq..delta..ltoreq.0.5, the Pb/Bi ratio is between about 0.2 and about 0.5, and the Sr/Ca ratio is between 0.5 and 2.

Abstract: It has been found that mixed metal oxides such as vanadium tungsten oxides or titanium niobium oxides, having the stoichiometry xM.sup.A O.sub.2 . Y.sub.2.sup.B O.sub.5 . zM.sup.C O.sub.3 constitute useful active positive electrode material in nonaqueous cells.