Abstract: In a covered graphite slider apparatus for the liquid phase epitaxial growth of mercury cadmium telluride, this invention shows the addition of an improved wipe-off arrangement positioned in tandem with the CdTe substrate upon which the HgCdTe epitaxial layer is grown. This arrangement includes the providing of a discardable CdTe drainage apron adjacent the substrate for preventing residual growth solution from migrating back onto the substrate which has just been wiped-off by the LPE slider.

Abstract: Apparatus and method for the monitoring of the manipulation of the keys of an instrument comprises monitoring apparatus which takes the form of a pressure sensing device, associated with each key, that can be fabricated in a configuration compatible with the instrument. According to one embodiment, the pressure sensing devices can be arranged so that the monitoring apparatus can be positioned on a balance rail of a piano keyboard. In this embodiment, the monitoring configuration can be fabricated and conveniently retrofitted to a standard keyboard. The pressure sensing device comprises a resistive element, a conducting element, and a force transducer ink layer separating the resistive and conducting elements. The resistance of the resistive element is monitored and when pressure is applied to the pressure sensing device, a change in resistance can be measured. Because the resistance is a function of pressure, the amount of pressure used to activate the key can be determined.

Abstract: In a covered graphite slider apparatus for the liquid phase epitaxial growth of mercury cadmium telluride this invention shows the addition of a wipe-off well into the moving part of the slider apparatus, which well contains pieces of CdTe to assist wipe-off of HgCdTe following LPE growth.

Abstract: Ohmic contacts to p-type mercury cadmium telluride are prepared by depositing a Column IB metal on a surface of the p-type mercury cadmium telluride, depositing a buffer material on the Column IB metal, and contacting the buffer material with a bonding material which is capable of alloying with the Column IB metal. The buffer material prevents alloying between the Column IB metal and the bonding material.

Abstract: Ohmic contacts to p-type mercury cadmium telluride are prepared by depositing a Column IB metal on a surface of the p-type mercury cadmium telluride, depositing a buffer material on the Column IB metal, and contacting the buffer material with a bonding material which is capable of alloying with the Column IB metal. The buffer material prevents alloying between the Column IB metal and the bonding material.

Abstract: The stoichiometry and free-carrier concentration of mercury cadmium telluride is adjusted by a heat treatment. Mercury cadmium telluride is heat treated in the presence of mercury and cadmium vapor.