Abstract: Coherent light sources combining a semiconductor optical source with a light diverging region, such as a flared resonator type laser diode or flared amplifier type MOPA, with a single lens adapted to correct the astigmatism of the light beam emitted from the source is disclosed. The lens has an acircular cylindrical or toroidal first surface and an aspheric or binary diffractive second surface. The first surface has a curvature chosen to substantially equalize the lateral and transverse divergences of the astigmatic beam. Sources with an array of light diverging regions producing an array of astigmatic beams and a single astigmatism-correcting lens array aligned with the beams are also disclosed. The single beam source can be used in systems with frequency converting nonlinear optics. The array source can be stacked with other arrays to produce very high output powers with high brightness.

Abstract: An external cavity, continuously tunable wavelength source comprising a coherent light source having an external cavity including a reflector, such as a mirror or right-angle prism, for reflecting a selected wavelength from a diffraction grating back into the coherent light source. The wavelength is selected by simultaneous rotation and translational movement of the reflector about a pivot point such that the optical path length of the external cavity is substantially identical to a numerical integer of half wavelengths at a plurality of tunable wavelengths about a central wavelength of a tunable bandwidth for the source such that cavity phase error is zero at the central wavelength and is maximally flat on either side of the center wavelength within the tunable bandwidth. The location of said pivot axis is chosen to set the cavity phase error equal to zero and its first and second derivatives substantially equal to zero at exactly one wavelength.

Abstract: An optical amplification system directs a diffraction-limited signal beam through a series of approximately 90.degree. crossings with a number of non-diffraction-limited pump beams in a photorefractive medium. All of the beams are s-polarized, resulting in an energy transfer from the pumps to the signal beam while leaving the signal beam diffraction-limited. The photorefractive medium is preferably a series of BaTiO.sub.3 :Rh crystals that receive the pump and signal beams through orthogonal faces, with their C-axes at approximately 45.degree. to both beams. A binary tree optical distribution network is used to minimize waveguide splits in forming a large number of pump beams.

Abstract: A travelling-wave semiconductor laser amplifier having suppressed self-oscillation is provided. When incorporated into a master oscillator power amplifier device, such a device has improved light output versus amplifier current characteristics. Also provided is a method for suppressing self-oscillation in travelling-wave semiconductor laser amplifier structures for improving the characteristics of the device into which the amplifier is incorporated.

Abstract: A semiconductor light amplifying medium has reduced self-focusing and optical filamentation for providing higher power coherent outputs in broad-area laser and amplifier devices. In one embodiment, a longitudinally inhomogeneous active region has alternating segments of first gain portions and second compensating portions. The compensating portions have a negative self-focusing parameter [.differential.n/.differential.P] and may be light absorbing (negative gain) regions with negative antiguiding factor .alpha. or light amplifying (positive gain) regions with positive antiguiding factor .alpha.. The .alpha.-parameter is defined as the ratio of refractive index change per change in gain, as a function of carrier density. In a second embodiment, the medium may have longitudinally varying peak filament period so that filaments beginning to form in one portion of the active region are subsequently dispersed in a succeeding portion, slowing filament growth.

Abstract: A wavelength-stabilized, semiconductor laser having a light amplifying diode heterostructure with a flared gain region in an external resonant cavity. The flared gain region has a narrow aperture end which may be coupled to a single mode waveguide and a wide output end. A light emitting surface of the heterostructure proximate to the Wide end of the flared gain region is partially reflective and combines with an external reflector to form a resonant cavity that is effectively unstable. The intracavity light-emitting surface proximate to the narrow aperture end is antireflection coated. The external reflector may be a planar mirror or a grating reflector. A lens or an optical fiber may couple the aperture end of the flared gain region to the external reflector. Frequency-selective feedback is provided by orienting the grating reflector or providing a prism in the cavity in front of the external planar mirror. Other filtering elements may also be placed in the external cavity.

Abstract: A wavelength-stabilized, semiconductor laser having a light amplifying diode heterostructure with a flared gain region in an external resonant cavity. The flared gain region has a narrow aperture end which may be coupled to a single mode waveguide and a wide output end. A light emitting surface of the heterostructure proximate to the wide end of the flared gain region is partially reflective and combines with an external reflector to form a resonant cavity that is effectively unstable. The intracavity light-emitting surface proximate to the narrow aperture end is antireflection coated. The external reflector may be a planar mirror or a grating reflector. A lens or an optical fiber may couple the aperture end of the flared gain region to the external reflector. Frequency-selective feedback is provided by orienting the grating reflector or providing a prism in the cavity in front of the external planar mirror. Other filtering elements may also be placed in the external cavity.

Abstract: A phased array of flared amplifiers fed by phase adjusters and a power splitter produces a single high power beam when the flared amplifier sections are aligned and closely spaced. In one embodiment the array is excited by a DBR laser integrated into the same substrate as the flared amplifiers. In another embodiment the array is self-excited and forms a laser between an edge of the substrate common to the power splitter and an edge of the substrate common to the flared amplifier.

Abstract: Construction of aspheric reflectors for unstable-resonator lasers to provide an arbitrary laser mode inside the resonator to correct aberrations of an output beam by the construction of the shape of an end reflector opposite the output reflector of the resonator cavity, such as aberrations resulting from refraction of a beam exiting the solid of the resonator having an index of refraction greater than 1 or to produce an aberration in the output beam that will precisely compensate for the aberration of an optical train into which the resonator beam is coupled.

Abstract: A semiconductor optical integrated circuit for wave division multiplexing has a semiconductor waveguide layer, a succession of diffraction grating points in the waveguide layer along a predetermined diffraction grating contour, a semiconductor diode array in the waveguide layer having plural optical ports facing the succession of diffraction grating points along a first direction, respective semiconductor diodes in the array corresponding to respective ones of a predetermined succession of wavelengths, an optical fiber having one end thereof terminated at the waveguide layer, the one end of the optical fiber facing the succession of diffraction grating points along a second direction, wherein the diffraction grating points are spatially distributed along the predetermined contour in such a manner that the succession of diffraction grating points diffracts light of respective ones of the succession of wavelengths between the one end of the optical fiber and corresponding ones of the optical ports.

Abstract: A semiconductor laser includes a grating that is disposed at an angle to cavity reflectors to coherently diffract a beam of light along a path that is at least partially laterally directed within the cavity. The grating period and orientation are selected such that a specified wavelength of the light beam propagating along the path will resonate for light that impinges upon the end reflectors at normal incidence. By keeping the angle of incidence of the light beam upon the grating greater than about 45 degrees, reflectivity of the grating is maximized and the required grating period is larger thereby simplifying the fabrication of the grating.

Abstract: A time-multiplexed, optically-addressed, crossbar switch (38) is provided using a two-dimensional, optically-addressed, reflective spatial light modulator (O-SLM) (20). Since the optical addressing is time-multiplexed, only N addressing lines are required for an N.times.N crossbar, rather than the N.sup.2 lines needed in the prior art. This reduction in addressing lines makes possible the development of enormous crossbar switches, such as 100.times.100, for the first time. In addition, since data paths remain entirely in the optics domain, data speeds can reach the multi-gigabit level. In the switch, a row (40) of N inputs (42) at the "read" wavelength is spread over one axis of the O-SLM. The light is refocused along the other axis to an output array (48) of detectors (50), so that each input has the potential to talk to any one output. The O-SLM is normally off, i.e., non-reflective, so that the output is, in the absence of an input signal, zero.

Abstract: A compact semiconductor laser light source providing short wavelength (ultraviolet, blue or green) coherent light by means of frequency doubling of red or infrared light from a high power diode heterostructure. The high power diode heterostructure is a MOPA device having a single mode laser oscillator followed by a multimode, preferably flared, optical power amplifier. A tunable configuration having an external rear reflector grating could also be used. A lens could be integrated with the MOPA to laterally collimate the light before it is emitted. Straight or curved, surface emitting gratings could also be incorporated. An astigmatism-correcting lens system having at least one cylindrical lens surface is disposed in the path of the output from the MOPA to provide a beam with substantially equal lateral and transverse beam width dimensions and beam divergence angles. A nonlinear optical crystal or waveguide is placed in the path of the astigmatism-free symmetrized beam to double the frequency of the light.

Abstract: Strained layer single or multiple quantum well lasers include an InP substrate, a pair of lattice-matched InGaAsP quarternary layers epitaxially grown on the substrate surrounding a pair of lattice matched In.sub.0.53 Ga.sub.0.47 As ternary layers surrounding one or more strained active layers of epitaxially grown, lattice-mismatched In.sub.0.75 Ga.sub.0.25 As. The level of strain is selected to control the bandgap energy to produce laser output having a wavelength in the range of 1.6 to 2.5 .mu.m. The multiple quantum well structure uses between each active layer. Diethyl zinc is used for p-type dopant in an InP cladding layer at a concentration level in the range of about 5.times.10.sup.17 /cm.sup.3 to about 2.times.10.sup.18 /cm.sup.3.

Abstract: A positively closing nozzle and method of its use in underground irrigation wherein the nozzle is elongated with inlet means at one end and positively closing means at the other end opened by water pressure applied to the nozzle, one or more nozzle being arranged underground in a selected pattern for irrigating plants or the like, the valve being operated by water pressure for producing a circumferential flow pattern of irrigation, the flow pattern being adjustable either by means of a spring-load or flow emitter means in the nozzle.

Abstract: Self-collimation of the output is achieved in an unstable resonator semiconductor laser by providing a large concave mirror M.sub.1 and a small convex mirror M.sub.2 on opposite surfaces of a semiconductor body of a material having an effective index of refraction denoted by n, where the respective mirror radii R.sub.1, R.sub.2 and beam radii r.sub.1, r.sub.2 are chosen to satisfy a condition ##EQU1## with a value of geometric magnification ##EQU2## where r.sub.1 and r.sub.2 are the radii of counterpropagating beams at respective mirrors of radii R.sub.1 and R.sub.2.

Abstract: Surface-emitting distributed feedback (DFB) lasers are disclosed with hybrid gratings. A first-order grating is provided at one or both ends of the active region of the laser for retroreflection of light back into the active region, and a second-order or nonresonant grating is provided at the opposite end for coupling light out perpendicular to the surface of the laser or in some other selected direction. The gratings may be curved to focus light retroreflected into the active region and to focus light coupled out to a point P. When so focused to a point, the DFB laser may be part of a monolithic read head for a laser recorded disk, or an optical coupler into an optical fiber.

Abstract: A catalyst composition prepared by depositing a metal or metal compound onto a preformed carbon support and thereafter converting said metal or metal compounds to an oxide or sulfide having hydrogenation activity. The metal is selected from the group of metals consisting of Groups II-B, IV-B, IV-A, V-A, VI-A, VII-A and VIII-A metals of the Periodic Table of the Elements. The catalyst compositions are useful in hydroconversion and hydrotreating processes.

Abstract: A catalyst composition prepared by depositing a metal or metal compound onto a carbon support formed, in effect, simultaneously with the deposition of the metal or metal compound via partial combustion of an unsaturated hydrocarbon and thereafter converting said metal or metal compound to an oxide or sulfide having hydrogenation activity. The metal is selected from the group of metals consisting of Groups II-B, IV-B, IV-A, V-A, VI-A, VII-A and VIII-A metals of the Periodic Table of the Elements. The catalyst compositions are useful in hydroconversion and hydrotreating processes.

Abstract: A compact semiconductor laser light source providing short wavelength (ultraviolet, blue or green) coherent light by means of frequency doubling of red or infrared light from a high power diode heterostructure. The high power diode heterostructure is a MOPA device having a single mode laser oscillator followed by a multimode, preferably flared, optical power amplifier. A tunable configuration having an external rear reflector grating could also be used. A lens could be integrated with the MOPA to laterally collimate the light before it is emitted. Straight or curved, surface emitting gratings could also be incorporated. An astigmatism-correcting lens system having at least one cylindrical lens surface is disposed in the path of the output from the MOPA to provide a beam with substantially equal lateral and transverse beam width dimensions and beam divergence angles. A nonlinear optical crystal or waveguide is placed in the path of the astigmatism-free symmetrized beam to double the frequency of the light.