Patents by Inventor Robert J. Masci

Robert J. Masci has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Techniques for processing a polycrystalline layer using an angled ion beam
    Patent number: 10553448
    Abstract: A method of processing a layer. The method may include providing the layer on a substrate, the substrate defining a substrate plane; directing an ion beam to an exposed surface of the layer in an ion exposure when the substrate is disposed in a first rotational position, the ion beam having a first ion trajectory, the first ion trajectory extending along a first direction, wherein the first ion trajectory forms a non-zero angle of incidence with respect to a perpendicular to the substrate plane; performing a rotation by rotating the substrate with respect to the ion beam about the perpendicular from the first rotational position to a second rotational position; and directing the ion beam to the exposed surface of the layer in an additional ion exposure along the first ion trajectory when the substrate is disposed in the second rotational position.
    Type: Grant
    Filed: October 31, 2016
    Date of Patent: February 4, 2020
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Tristan Y. Ma, Morgan Evans, Kevin Anglin, Robert J. Masci, John Hautala
  • TECHNIQUES FOR PROCESSING A POLYCRYSTALLINE LAYER USING AN ANGLED ION BEAM
    Publication number: 20180122650
    Abstract: A method of processing a layer. The method may include providing the layer on a substrate, the substrate defining a substrate plane; directing an ion beam to an exposed surface of the layer in an ion exposure when the substrate is disposed in a first rotational position, the ion beam having a first ion trajectory, the first ion trajectory extending along a first direction, wherein the first ion trajectory forms a non-zero angle of incidence with respect to a perpendicular to the substrate plane; performing a rotation by rotating the substrate with respect to the ion beam about the perpendicular from the first rotational position to a second rotational position; and directing the ion beam to the exposed surface of the layer in an additional ion exposure along the first ion trajectory when the substrate is disposed in the second rotational position.
    Type: Application
    Filed: October 31, 2016
    Publication date: May 3, 2018
    Inventors: Tristan Y. Ma, Morgan Evans, Kevin Anglin, Robert J. Masci, John Hautala