Patents by Inventor Robert J. O'Donnell
Robert J. O'Donnell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8935990Abstract: Components of semiconductor processing apparatus axe formed at least partially of erosion, corrosion and/or corrosion-erosion resistant ceramic materials. Exemplary ceramic materials can include at least one oxide, nitride, boride, carbide and/or fluoride of hafnium, strontium, lanthanum oxide and/or dysprosium. The ceramic materials can be applied as coatings over substrates to form composite components, or formed into monolithic bodies. The coatings can protect substrates from physical and/or chemical attack. The ceramic materials can be used to form plasma exposed components of semiconductor processing apparatus to provide extended service lives.Type: GrantFiled: January 7, 2009Date of Patent: January 20, 2015Assignee: Lam Research CorporationInventor: Robert J. O'Donnell
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Patent number: 8486841Abstract: A corrosion resistant component of a plasma chamber includes a liquid crystalline polymer. In a preferred embodiment, the liquid crystalline polymer (LCP) is provided on an aluminum component having an anodized or non-anodized surface. The liquid crystalline polymer can also be provided on an alumina component. The liquid crystalline polymer can be deposited by a method such as plasma spraying. The liquid crystalline polymer may also be provided as a preformed sheet or other shape adapted to cover the exposed surfaces of the reaction chamber. Additionally, the reactor components may be made entirely from liquid crystalline polymer by machining the component from a solid block of liquid crystalline polymer or molding the component from the polymer. The liquid crystalline polymer may contain reinforcing fillers such as glass or mineral fillers.Type: GrantFiled: September 14, 2009Date of Patent: July 16, 2013Assignee: Lam Research CorporationInventors: Robert J. O'Donnell, Christopher C. Chang, John E. Daugherty
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Patent number: 8318327Abstract: Components of semiconductor processing apparatus are formed at least partially of erosion, corrosion and/or corrosion-erosion resistant ceramic materials. Exemplary ceramic materials can include at least one oxide, nitride, boride, carbide and/or fluoride of hafnium, strontium, lanthanum oxide and/or dysprosium. The ceramic materials can be applied as coatings over substrates to form composite components, or formed into monolithic bodies. The coatings ca protect substrates from physical and/or chemical attack. The ceramic materials can be used to form plasma exposed components of semiconductor processing apparatus to provide extended service lives.Type: GrantFiled: January 7, 2009Date of Patent: November 27, 2012Assignee: Lam Research CorporationInventor: Robert J. O'Donnell
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Publication number: 20100294742Abstract: In an example embodiment, a wet system includes a proximity head and a holder for substrate (e.g., a semiconductor wafer). The proximity head is configured to cause a flow of an aqueous fluid in a meniscus across a surface of the proximity head. The surface of the proximity head interfaces with a surface of a substrate through the flow. The surface of the head is composed of a non-reactive material (e.g., thermoplastic) with modifications as to surface topography that confine, maintain, and/or facilitate the flow. The modifications as to surface topography might be inscribed on the surface with a conical scribe (e.g., with a diamond or SiC tip) or melt printed on the surface using a template. These modifications might produce hemi-wicking or superhydrophobicity. The holder exposes the surface of the substrate to the flow.Type: ApplicationFiled: May 22, 2009Publication date: November 25, 2010Inventors: Enrico Magni, Robert J. O'Donnell, Jeffrey J. Farber
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Publication number: 20100003826Abstract: A corrosion resistant component of a plasma chamber includes a liquid crystalline polymer. In a preferred embodiment, the liquid crystalline polymer (LCP) is provided on an aluminum component having an anodized or non-anodized surface. The liquid crystalline polymer can also be provided on an alumina component. The liquid crystalline polymer can be deposited by a method such as plasma spraying. The liquid crystalline polymer may also be provided as a preformed sheet or other shape adapted to cover the exposed surfaces of the reaction chamber. Additionally, the reactor components may be made entirely from liquid crystalline polymer by machining the component from a solid block of liquid crystalline polymer or molding the component from the polymer. The liquid crystalline polymer may contain reinforcing fillers such as glass or mineral fillers.Type: ApplicationFiled: September 14, 2009Publication date: January 7, 2010Applicant: Lam Research CorporationInventors: ROBERT J. O'DONNELL, Christopher C. Chang, John E. Daugherty
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Patent number: 7605086Abstract: A corrosion resistant component of a plasma chamber includes a liquid crystalline polymer. In a preferred embodiment, the liquid crystalline polymer (LCP) is provided on an aluminum component having an anodized or non-anodized surface. The liquid crystalline polymer can also be provided on an alumina component. The liquid crystalline polymer can be deposited by a method such as plasma spraying. The liquid crystalline polymer may also be provided as a preformed sheet or other shape adapted to cover the exposed surfaces of the reaction chamber. Additionally, the reactor components may be made entirely from liquid crystalline polymer by machining the component from a solid block of liquid crystalline polymer or molding the component from the polymer. The liquid crystalline polymer may contain reinforcing fillers such as glass or mineral fillers.Type: GrantFiled: September 22, 2006Date of Patent: October 20, 2009Assignee: Lam Research CorporationInventors: Robert J. O'Donnell, Christopher C. Chang, John E. Daugherty
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Publication number: 20090123735Abstract: Components of semiconductor processing apparatus are formed at least partially of erosion, corrosion and/or corrosion-erosion resistant ceramic materials. Exemplary ceramic materials can include at least one oxide, nitride, boride, carbide and/or fluoride of hafnium, strontium, lanthanum oxide and/or dysprosium. The ceramic materials can be applied as coatings over substrates to form composite components, or formed into monolithic bodies. The coatings ca protect substrates from physical and/or chemical attack. The ceramic materials can be used to form plasma exposed components of semiconductor processing apparatus to provide extended service lives.Type: ApplicationFiled: January 7, 2009Publication date: May 14, 2009Applicant: Lam Research CorporationInventor: ROBERT J. O'DONNELL
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Publication number: 20090120790Abstract: Components of semiconductor processing apparatus axe formed at least: partially of erosion, corrosion and/or corrosion-erosion resistant ceramic materials. Exemplary ceramic materials can include at least one oxide, nitride, boride, carbide and/or fluoride of hafnium, strontium, lanthanum oxide and/or dysprosium. The ceramic materials can be applied as coatings over substrates to form composite components, or formed into monolithic bodies. The coatings can protect substrates from physical and/or chemical attack. The ceramic materials can be used to form plasma exposed components of semiconductor processing apparatus to provide extended service lives.Type: ApplicationFiled: January 7, 2009Publication date: May 14, 2009Applicant: Lam Research CorporationInventor: ROBERT J. O'DONNELL
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Patent number: 7503977Abstract: A substrate preparation system includes a proximity head configured to be positioned near a surface of the substrate to deliver a solution to the surface of the substrate. The proximity head includes a plurality of inlets for delivering the solution and a plurality of outlets for removing a portion of the solution from the surface of the substrate. The surface of the substrate maintains a remaining portion of the solution as a coherent film after the proximity head is scanned over the surface of the substrate. The coherent film is configured to be cured. The remaining portion of the solution acts on the surface of the substrate and binds particulates present on the surface of the substrate as the coherent film cures.Type: GrantFiled: September 27, 2005Date of Patent: March 17, 2009Assignee: Lam Research CorporationInventors: Robert J. O'Donnell, Thomas W. Anderson
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Publication number: 20090068845Abstract: Components of semiconductor processing apparatus are formed at least partially of erosion, corrosion and/or corrosion-erosion resistant ceramic materials. Exemplary ceramic materials can include at least one oxide, nitride, boride, carbide and/or fluoride of hafnium, strontium, lanthanum oxide and/or dysprosium. The ceramic materials can be applied as coatings over substrates to form composite components, or formed into monolithic bodies. The coatings can protect substrates from physical and/or chemical attack. The ceramic materials can be used to form plasma exposed components of semiconductor processing apparatus to provide extended service lives.Type: ApplicationFiled: August 28, 2008Publication date: March 12, 2009Applicant: Lam Research CorporationInventor: Robert J. O'Donnell
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Patent number: 7363727Abstract: A method for processing a substrate is provided. The method includes applying an active agent to an active region of a surface of the substrate. Then, the method includes generating a fluid meniscus on the surface of the substrate with a proximity head, where the fluid meniscus is surrounding the active region. In one example, processing the surface of the substrate with the active agent includes one of an etching operation, a cleaning operation, a rinsing operation, a plating operation, or a lithography operation, and processing the surface of the substrate with the fluid meniscus includes one of an etching operation, a cleaning operation, a rinsing operation, a plating operation, a drying operation, or a lithography operation.Type: GrantFiled: June 5, 2006Date of Patent: April 29, 2008Assignee: Lam Research CorporationInventor: Robert J. O'Donnell
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Patent number: 7311797Abstract: Components of semiconductor processing apparatus comprise thermal sprayed yttria-containing coatings that provide erosion, corrosion and/or corrosion-erosion resistance in plasma atmospheres. The coatings can protect substrates from physical and/or chemical attack.Type: GrantFiled: June 27, 2002Date of Patent: December 25, 2007Assignee: Lam Research CorporationInventors: Robert J. O'Donnell, John E. Daugherty
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Patent number: 7300537Abstract: Components of semiconductor processing apparatus comprise thermal sprayed yttria-containing coatings that provide erosion, corrosion and/or corrosion-erosion resistance in plasma atmospheres. The coatings can protect substrates from physical and/or chemical attack.Type: GrantFiled: December 2, 2004Date of Patent: November 27, 2007Assignee: Lam Research CorporationInventors: Robert J. O'Donnell, John E. Daugherty
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Patent number: 7270760Abstract: A method and apparatus are provided for simulating a standard wafer in semiconductor manufacturing equipment. The apparatus includes a support layer suitable for being handled by the semiconductor manufacturing equipment. Applied to the support layer is a mixture including a process agent and a material. During use, the present invention simulates a standard production wafer including material similar to that in the mixture of the present invention.Type: GrantFiled: October 4, 2005Date of Patent: September 18, 2007Assignee: Lam Research CorporationInventors: Gregory J. Goldspring, Robert J. O'Donnell
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Patent number: 7255898Abstract: A corrosion resistant component of semiconductor processing equipment such as a plasma chamber comprises zirconia toughened ceramic material as an outermost surface of the component. The component can be made entirely of the ceramic material or the ceramic material can be provided as a coating on a substrate such as aluminum or aluminum alloy, stainless steel, or refractory metal. The zirconia toughened ceramic can be tetragonal zirconia polycrystalline (TZP) material, partially-stabilized zirconia (PSZ), or a zirconia dispersion toughened ceramic (ZTC) such as zirconia-toughened alumina (tetragonal zirconia particles dispersed in Al2O3). In the case of a ceramic zirconia toughened coating, one or more intermediate layers may be provided between the component and the ceramic coating. To promote adhesion of the ceramic coating, the component surface or the intermediate layer surface may be subjected to a surface roughening treatment prior to depositing the ceramic coating.Type: GrantFiled: May 22, 2003Date of Patent: August 14, 2007Assignee: Lam Research CorporationInventors: Robert J. O'Donnell, Christopher C. Chang, John E. Daugherty
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Patent number: 7128804Abstract: A corrosion resistant component of a plasma chamber includes a liquid crystalline polymer. In a preferred embodiment, the liquid crystalline polymer (LCP) is provided on an aluminum component having an anodized or non-anodized surface. The liquid crystalline polymer can also be provided on an alumina component. The liquid crystalline polymer can be deposited by a method such as plasma spraying. The liquid crystalline polymer may also be provided as a preformed sheet or other shape adapted to cover the exposed surfaces of the reaction chamber. Additionally, the reactor components may be made entirely from liquid crystalline polymer by machining the component from a solid block of liquid crystalline polymer or molding the component from the polymer. The liquid crystalline polymer may contain reinforcing fillers such as glass or mineral fillers.Type: GrantFiled: December 29, 2000Date of Patent: October 31, 2006Assignee: Lam Research CorporationInventors: Robert J. O'Donnell, Christopher C. Chang, John E. Daugherty
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Patent number: 7093375Abstract: An apparatus for processing a substrate is provided which includes a proximity head proximate to a surface of the substrate when in operation. The apparatus also includes an opening on a surface of the proximity head to a cavity defined in the proximity head where the cavity delivers an active agent to the surface of the substrate through the opening. The apparatus further includes a plurality of conduits on the surface of the proximity head that generates a fluid meniscus on the surface of the substrate surrounding the opening.Type: GrantFiled: September 30, 2004Date of Patent: August 22, 2006Assignee: Lam Research CorporationInventor: Robert J. O'Donnell
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Patent number: 6988326Abstract: In one of the many embodiments, a method for processing a substrate is provided which includes generating a first fluid meniscus and a second fluid meniscus on a surface of the substrate where the first fluid meniscus being substantially adjacent to the second fluid meniscus. The meniscus also includes substantially separating the first fluid meniscus and the second fluid meniscus with a barrier.Type: GrantFiled: September 30, 2004Date of Patent: January 24, 2006Assignee: Lam Research CorporationInventors: Robert J. O'Donnell, Thomas W. Anderson
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Patent number: 6954993Abstract: In one of the many embodiments, a method for processing a substrate is disclosed which includes generating a first fluid meniscus and a second fluid meniscus at least partially surrounding the first fluid meniscus wherein the first fluid meniscus and the second fluid meniscus are generated on a surface of the substrate.Type: GrantFiled: June 30, 2004Date of Patent: October 18, 2005Assignee: Lam Research CorporationInventors: Michael G. R. Smith, Michael Ravkin, Robert J. O'Donnell
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Patent number: 6852636Abstract: A method for performing a metallic etch, etch mask stripping, and removal of residual sidewall passivation in a single etch chamber. A wafer is placed in an etch chamber. A metal etch is performed on the wafer. A stripping gas, such as a mixture of oxygen and argon is provided to the etch chamber and is energized to form an oxygen plasma. The oxygen plasma strips the etch mask from the wafer and removes residual sidewall passivation. The oxygen plasma also cleans the etch chamber.Type: GrantFiled: December 27, 1999Date of Patent: February 8, 2005Assignee: Lam Research CorporationInventor: Robert J. O'Donnell