Abstract: A system and method is provided for removing chamber residues from a plasma processing system in a dry cleaning process. The dry cleaning process includes introducing a process gas including a gas containing carbon and oxygen in a process chamber of the plasma processing system, generating a plasma from the process gas, exposing the chamber residue to the plasma in a dry cleaning process to form a volatile reaction product, and exhausting the reaction product from the process chamber. The plasma processing system may be monitored to determine status of the processing system, and based upon the status from the monitoring, the method includes either continuing the exposing and monitoring, or stopping the dry cleaning process. The dry cleaning process can be a waferless dry cleaning (WDC) process, or a substrate may present on the substrate holder in the process chamber during the dry cleaning process.

Abstract: A method for forming a mechanically strengthened feature in a low-k dielectric film on a substrate includes using either spin-on-dielectric (SOD) techniques, or chemical vapor deposition (CVD) techniques to form a low-k dielectric film on the substrate. A sidewall of the feature in the low-k dielectric film is then treated in order to increase the film's mechanical strength. Treatment of the sidewall of the feature in the low-k dielectric film comprises forming a hardened layer by subjecting the low-k dielectric film to low energy, high flux ion implantation. Process parameters of the ion implantation are selected such that the implantation process does not cause a substantial change in the dielectric constant of the low-k dielectric film.

Abstract: The present invention discloses a method for constructing a completely micromachined MCP that is activated with thin-film dynodes wherein the interchannel regions are first dry etched in the substrate, resulting in channel pillars. The etched portions of the substrate are then back filled and the channel pillars are thereafter removed to produce a micromachined perforated microchannel plate. The technique may be employed to produce an active element for an integrated image tube or photomultiplier tube.

Abstract: A micromachined electron multiplier is disclosed wherein a substrate has at least one trench formed therein and an aperture cover is disposed on the substrate with at least one inlet aperture aligned with one end of the channel. Either the substrate or the apertured cover may have an outlet aperture formed therein. A variety of channel shapes, and arrays are disclosed as well as a solid state photomultiplier tube formed with an integrated radiation window and anode structure.

Abstract: Manufacture of a microchannel plate may be improved using photoelectrochemical etching and thin film activation such as CVD and nitriding and oxidizing wall surface portions of pores formed in the substrate. The pore pattern may be changed by oxidizing and etching the substrate prior to activation.