Abstract: An apparatus for improving the signal to noise ratio of measurements of the thickness of layers in a thin film stack uses a photoacoustic measurement system that includes a time differentiation system for inducing a delay in pump beam pulses. The time differentiation system uses, among other things, a birefringent element and other elements to control the polarization of pump beam pulses. Use of the apparatus involves applying a time varying voltage to an electro-optic modulator driver and setting a time differentiation step; or, in another embodiment, applying a time varying voltage to an electro-optic modulator to induce a fixed time delay delta-t between a vertically polarized pulse and a horizontally polarized pulse. The high frequency operation of the system provides for improved determinations of film thickness.

Abstract: A data processing system includes a network containing of a set of connected devices, where individual ones of the connected devices include a data processor that executes a program for connecting to and disconnecting from the network and for maintaining a first list descriptive of other connected devices and a second list descriptive of at least some user-defined services published by individual ones of publisher connected devices that form a first sub-set of the connected devices. Individual ones of the publisher connected devices maintain a third list descriptive of an individual one or individual ones of registered service subscriber connected devices that form a second sub-set of connected devices. The publisher connected devices provide a service output to registered service subscriber connected devices upon an occurrence of at least one predetermined triggering event, which may be a push trigger, a pull trigger, or a combination of push and pull triggers.

Abstract: An apparatus for improving the signal to noise ratio of measurements of the thickness of layers in a thin film stack uses a photoacoustic measurement system that includes a time differentiation system for inducing a delay in pump beam pulses. The time differentiation system uses, among other things, a birefringent element and other elements to control the polarization of pump beam pulses. Use of the apparatus involves applying a time varying voltage to an electro-optic modulator driver and setting a time differentiation step; or, in another embodiment, applying a time varying voltage to an electro-optic modulator to induce a fixed time delay delta-t between a vertically polarized pulse and a horizontally polarized pulse. The high frequency operation of the system provides for improved determinations of film thickness.

Abstract: A data processing system includes a network containing of a set of connected devices, where individual ones of the connected devices include a data processor that executes a program for connecting to and disconnecting from the network and for maintaining a first list descriptive of other connected devices and a second list descriptive of at least some user-defined services published by individual ones of publisher connected devices that form a first sub-set of the connected devices. Individual ones of the publisher connected devices maintain a third list descriptive of an individual one or individual ones of registered service subscriber connected devices that form a second sub-set of connected devices. The publisher connected devices provide a service output to registered service subscriber connected devices upon an occurrence of at least one predetermined triggering event, which may be a push trigger, a pull trigger, or a combination of push and pull triggers.

Abstract: Disclosed is a system for the characterization of thin films and interfaces between thin films through measurements of their mechanical and thermal properties. In the system light is absorbed in a thin film or in a structure made up of several thin films, and the change in optical transmission or reflection is measured and analyzed. The change in reflection or transmission is used to give information about the ultrasonic waves that are produced in the structure. The information that is obtained from the use of the measurement methods and apparatus of this invention can include: (a) a determination of the thickness of thin films with a speed and accuracy that is improved compared to earlier methods; (b) a determination of the thermal, elastic, and optical properties of thin films; (c) a determination of the stress in thin films; and (d) a characterization of the properties of interfaces, including the presence of roughness and defects.

Abstract: Disclosed is a system for the characterization of thin films and interfaces between thin films through measurements of their mechanical and thermal properties. In the system light is absorbed in a thin film or in a structure made up of several thin films, and the change in optical transmission or reflection is measured and analyzed. The change in reflection or transmission is used to give information about the ultrasonic waves that are produced in the structure. The information that is obtained from the use of the measurement methods and apparatus of this invention can include: (a) a determination of the thickness of thin films with a speed and accuracy that is improved compared to earlier methods; (b) a determination of the thermal, elastic, and optical properties of thin films; (c) a determination of the stress in thin films; and (d) a characterization of the properties of interfaces, including the presence of roughness and defects.

Abstract: Disclosed is a system for the characterization of thin films and interfaces between thin films through measurements of their mechanical and thermal properties. In the system light is absorbed in a thin film or in a structure made up of several thin films, and the change in optical transmission or reflection is measured and analyzed. The change in reflection or transmission is used to give information about the ultrasonic waves that are produced in the structure. The information that is obtained from the use of the measurement methods and apparatus of this invention can include: (a) a determination of the thickness of thin films with a speed and accuracy that is improved compared to earlier methods; (b) a determination of the thermal, elastic, and optical properties of thin films; (c) a determination of the stress in thin films; and (d) a characterization of the properties of interfaces, including the presence of roughness and defects.

Abstract: Disclosed is a system for the characterization of thin films and interfaces between thin films through measurements of their mechanical and thermal properties. In the system light is absorbed in a thin film or in a structure made up of several thin films, and the change in optical transmission or reflection is measured and analyzed. The change in reflection or transmission is used to give information about the ultrasonic waves that are produced in the structure. The information that is obtained from the use of the measurement methods and apparatus of this invention can include: (a) a determination of the thickness of thin films with a speed and accuracy that is improved compared to earlier methods; (b) a determination of the thermal, elastic, and optical properties of thin films; (c) a determination of the stress in thin films; and (d) a characterization of the properties of interfaces, including the presence of roughness and defects.

Abstract: Disclosed is a system for the characterization of thin films and interfaces between thin films through measurements of their mechanical and thermal properties. In the system light is absorbed in a thin film or in a structure made up of several thin films, and the change in optical transmission or reflection is measured and analyzed. The change in reflection or transmission is used to give information about the ultrasonic waves that are produced in the structure. The information that is obtained from the use of the measurement methods and apparatus of this invention can include: (a) a determination of the thickness of thin films with a speed and accuracy that is improved compared to earlier methods; (b) a determination of the thermal, elastic, and optical properties of thin films; (c) a determination of the stress in thin films; and (d) a characterization of the properties of interfaces, including the presence of roughness and defects.

Abstract: Disclosed is a system for the characterization of thin films and interfaces between thin films through measurements of their mechanical and thermal properties. In the system light is absorbed in a thin film or in a structure made up of several thin films, and the change in optical transmission or reflection is measured and analyzed. The change in reflection or transmission is used to give information about the ultrasonic waves that are produced in the structure. The information that is obtained from the use of the measurement methods and apparatus of this invention can include: (a) a determination of the thickness of thin films with a speed and accuracy that is improved compared to earlier methods; (b) a determination of the thermal, elastic, and optical properties of thin films; (c) a determination of the stress in thin films; and (d) a characterization of the properties of interfaces, including the presence of roughness and defects.

Abstract: Disclosed is a method for characterizing a sample, comprising the steps of: (a) acquiring data from the sample using at least one probe beam wavelength to measure, for times less than a few nanoseconds, a change in the reflectivity of the sample induced by a pump beam; (b) analyzing the data to determine at least one material property by comparing a background signal component of the data with data obtained for a similar delay time range from one or more samples prepared under conditions known to give rise to certain physical and chemical material properties; and (c) analyzing a component of the measured time dependent reflectivity caused by ultrasonic waves generated by the pump beam using the at least one determined material property. The first step of analyzing may include a step of interpolating between reference samples to obtain an intermediate set of material properties. The material properties may include sound velocity, density, and optical constants.

Abstract: Disclosed is a system for the characterization of thin films and interfaces between thin films through measurements of their mechanical and thermal properties. In the system light is absorbed in a thin film or in a structure made up of several thin films, and the change in optical transmission or reflection is measured and analyzed. The change in reflection or transmission is used to give information about the ultrasonic waves that are produced in the structure. The information that is obtained from the use of the measurement methods and apparatus of this invention can include: (a) a determination of the thickness of thin films with a speed and accuracy that is improved compared to earlier methods; (b) a determination of the thermal, elastic, and optical properties of thin films; (c) a determination of the stress in thin films; and (d) a characterization of the properties of interfaces, including the presence of roughness and defects.

Abstract: An optical heat generation and detection system generates a first non-destructive pulsed beam of electromagnetic radiation that is directed upon a sample containing at least one interface between similar or dissimilar materials. The first pulsed beam of electromagnetic radiation, a pump beam (21a), produces a non-uniform temperature change within the sample. A second non-destructive pulsed beam of electromagnetic radiation, a probe beam (21b), is also directed upon the sample. Physical and chemical properties of the materials, and of the interface, are measured by observing changes in a transient optical response of the sample to the probe beam, as revealed by a time dependence of changes in, by example, beam intensity, direction, or state of polarization. The system has increased sensitivity to interfacial properties including defects, contaminants, chemical reactions and delaminations, as compared to conventional non-destructive, non-contact techniques.

Abstract: A method for forming narrow length transistors by forming a trench in a first layer over a semiconductor substrate. Spacers are then formed within the trench and a gate dielectric is formed between the spacers at the bottom of the trench on the semiconductor substrate. The trench is then filled with a gate electrode material which is chemically-mechanically polished back to isolate the gate electrode material within the trench, and the first layer is removed leaving the gate dielectric, gate electrode and spacers behind.