Abstract: Methods are provided for calibrating a tool using an eddy current probe and calibration wafers that each have a measurable predetermined property and a measurement of the measurable predetermined property of a first calibration wafer is different than a measurement of the measurable predetermined property of a second calibration wafer. The methods include determining a first set of impedance measurements of the calibration wafers while each is disposed in the tool and the tool has a tool parameter that is at a first condition, collecting a second set of impedance measurements of the calibration wafers while each is disposed in the tool and the tool parameter is at a second condition, establishing a reference point, based upon a first and a second data point from the first set of impedance measurements and a first and a second data point from the second set of impedance measurements.

Abstract: Methods and apparatus are provided for calibrating a chemical mechanical polishing (“CMP”) tool having a polishing station with a platen, an eddy current probe disposed within the platen, a polishing pad coupled to the platen, and a metal element disposed within the polishing station and configured to be selectively moved proximate the polishing pad. The method includes the steps of determining a thickness measurement of the polishing pad and adjusting at least one tool parameter based, in part, upon the determined thickness measurement of the polishing pad.

Abstract: Methods and apparatus are provided for conditioning of polishing surfaces utilized during CMP processing. The method comprises contacting the polishing surface and a conditioning surface with a first force, one of the surfaces coupled to a support member that has an axis. The polishing surface and/or the conditioning surface is moved at a constant velocity. Torque exerted by the support member about the axis to effect a relative position between the conditioning surface and the polishing surface is measured and used to obtain a process variable. The process variable is compared to a setpoint value for the relative position of the conditioning surface and the polishing surface. A second force is calculated and the polishing surface and the conditioning surface then are contacted with the second force, if the process variable differs from the setpoint value by more than an allowed tolerance.