Patents by Inventor Robert J. Walden

Robert J. Walden has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • System and method to manufacture magnetic random access memory
    Patent number: 8208290
    Abstract: A system and method to manufacture magnetic random access memory is disclosed. In a particular embodiment, a method of making a magnetic tunnel junction memory system includes forming a portion of a metal layer into a source line having a substantially rectilinear portion. The method also includes coupling the source line, at the substantially rectilinear portion, to a first transistor using a first via. The first transistor is configured to supply a first current received from the source line to a first magnetic tunnel junction device. The method includes coupling the source line to a second transistor using a second via, where the second transistor is configured to supply a second current received from the source line to a second magnetic tunnel junction device.
    Type: Grant
    Filed: August 26, 2009
    Date of Patent: June 26, 2012
    Assignee: QUALCOMM Incorporated
    Inventors: Hari M. Rao, Seung Kang, Xiaochun Zhu, Sean Li, Ken Lee, Matthew M. Nowak, Robert J. Walden
  • System and Method to Manufacture Magnetic Random Access Memory
    Publication number: 20110051509
    Abstract: A system and method to manufacture magnetic random access memory is disclosed. In a particular embodiment, a method of making a magnetic tunnel junction memory system includes forming a portion of a metal layer into a source line having a substantially rectilinear portion. The method also includes coupling the source line, at the substantially rectilinear portion, to a first transistor using a first via. The first transistor is configured to supply a first current received from the source line to a first magnetic tunnel junction device. The method includes coupling the source line to a second transistor using a second via, where the second transistor is configured to supply a second current received from the source line to a second magnetic tunnel junction device.
    Type: Application
    Filed: August 26, 2009
    Publication date: March 3, 2011
    Applicant: QUALCOMM Incorporated
    Inventors: Hari M. Rao, Seung Kang, Xiaochun Zhu, Sean Li, Ken Lee, Matthew M. Nowak, Robert J. Walden