Abstract: An optical processing system comprises a first integrated optical waveguide array; a first bundle of optical fibres; the optical fibres being coupled to the first integrated optical waveguide array by a first coupler; the optical fibres being further coupled to an optical Fourier stage; a second bundle of optical fibres being coupled to the optical Fourier stage; a second integrated optical waveguide array; and a second coupler for coupling the second bundle of optical fibres to the second integrated optical waveguide array.

Abstract: A semiconductor device includes a local oxidation of silicon (LOCOS) structure and a shallow trench isolation (STI) structure formed over a semiconductor substrate. A source region is located between the LOCOS structure and the STI structure. A gate structure is located between the source region and the LOCOS structure. A contact may be located over the STI structure electrically connect to the gate structure.

Abstract: A method to incorporate multiple independent optical correlators into one system. By “independent optical correlator,” we mean an optical correlator comprising of an input SLM, filter SLM, and camera, combined with appropriate coherent illumination and Fourier transforming lenses. By “one system” we mean a single optical system which utilises the elements of each of the independent correlators multiple times.

Abstract: A semiconductor device includes a local oxidation of silicon (LOCOS) structure and a shallow trench isolation (STI) structure formed over a semiconductor substrate. A source region is located between the LOCOS structure and the STI structure. A gate structure is located between the source region and the LOCOS structure. A contact may be located over the STI structure electrically connect to the gate structure.

Abstract: A method to incorporate multiple independent optical correlators into one system. By “independent optical correlator,” we mean an optical correlator comprising of an input SLM, filter SLM, and camera, combined with appropriate coherent illumination and Fourier transforming lenses. By “one system” we mean a single optical system which utilises the elements of each of the independent correlators multiple times.

Abstract: A semiconductor device includes a NMOS transistor with a back gate connection and a source region disposed on opposite sides of the back gate connection. The source region and back gate connection are laterally isolated by an STI oxide layer which surrounds the back gate connection. The NMOS transistor has a gate having a closed loop configuration, extending partway over a LOCOS oxide layer which surrounds, and is laterally separated from, the STI oxide layer. A lightly-doped drain layer is disposed on opposite sides of the NMOS transistor, extending under the LOCOS oxide layer to a body region of the NMOS transistor. The LOCOS oxide layer is thinner than the STI oxide layer, so that the portion of the gate over the LOCOS oxide layer provides a field plate functionality. The NMOS transistor may optionally be surrounded by an isolation structure which extends under the NMOS transistor.

Abstract: A semiconductor device includes a NMOS transistor with a back gate connection and a source region disposed on opposite sides of the back gate connection. The source region and back gate connection are laterally isolated by an STI oxide layer which surrounds the back gate connection. The NMOS transistor has a gate having a closed loop configuration, extending partway over a LOCOS oxide layer which surrounds, and is laterally separated from, the STI oxide layer. A lightly-doped drain layer is disposed on opposite sides of the NMOS transistor, extending under the LOCOS oxide layer to a body region of the NMOS transistor. The LOCOS oxide layer is thinner than the STI oxide layer, so that the portion of the gate over the LOCOS oxide layer provides a field plate functionality. The NMOS transistor may optionally be surrounded by an isolation structure which extends under the NMOS transistor.