Abstract: An improved bipolar transistor power amplifier circuit including a bias input node, an RF input node, an RF output node, and a plurality of HBTs. Each HBT includes a base, an emitter, a collector, a base resistor connected to the base and selected to offset a portion of the voltage drop across the base and emitter of each transistor, an emitter resistor connected to the emitter, and a base capacitor having two electrodes one of which is coupled to the base. The HBTs are grouped together in two or more groups and each group includes a base resistor selected to offset another portion of the voltage drop across the base and emitter of the transistors.

Abstract: An improved bipolar transistor power amplifier circuit including a bias input node, an RF input node, an RF output node, and a plurality of HBTs. Each HBT includes a base, an emitter, a collector, a base resistor connected to the base and selected to offset a portion of the voltage drop across the base and emitter of each transistor, an emitter resistor connected to the emitter, and a base capacitor having two electrodes one of which is coupled to the base. The HBTs are grouped together in two or more groups and each group includes a base resistor selected to offset another portion of the voltage drop across the base and emitter of the transistors.

Abstract: An amplifier circuit and fabrication method including a bias input node, an RF input node, an RF output node, and a plurality of amplifier cells. Each cell has a plurality of discrete emitter contacts of a first conductivity type, a plurality of discrete base contacts of a second conductivity type and grouped in two or more groups, at least one collector contact of the first conductivity type connected to the RF output node, and a base capacitor for each group having two electrodes: an input electrode coupled to the RF input node and an output electrode coupled to a group of discrete base contacts. There is also a base resistor for each group having an input coupled to the bias input node and an output coupled to a group of discrete base contacts. An emitter resistor is coupled to each discrete emitter contact to provide more effective base ballasting and thermal stability than with a cascode arrangement of HBT transistors.

Abstract: A power controller circuit for a power amplifier stage includes an exponential power control circuit responsive to a power control signal for providing an exponential control current to control power amplifier stage and linear power control circuit responsive to the power control signal for supplementing the exponential control current to the power amplifier stage with a linear control current to produce a composite control current with a reduced and extended slope.

Abstract: A power controller circuit for a power amplifier stage includes an exponential power control circuit responsive to a power control signal for providing an exponential control current to control power amplifier stage and linear power control circuit responsive to the power control signal for supplementing the exponential control current to the power amplifier stage with a linear control current to produce a composite control current with a reduced and extended slope.