Patents by Inventor Robert John O'Donnell

Robert John O'Donnell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Techniques for etching a transition metal-containing layer
    Patent number: 6069035
    Abstract: A method for etching at least partially through a transition metal-containing layer disposed above a substrate is disclosed. The transition metal-containing layer is disposed below an etch mask. The method includes providing a plasma processing system having a plasma processing chamber, and configuring the plasma processing chamber to etch the transition metal-containing layer. The plasma processing chamber configuring process includes configuring the plasma processing chamber to receive a source gas that includes HCl and Ar, and configuring a power supply associated with the plasma processing chamber to supply energy to strike a plasma from the source gas. The plasma processing chamber configuring process further includes configuring the plasma processing chamber to etch at least partially the transition metal-containing layer with the plasma.
    Type: Grant
    Filed: December 19, 1997
    Date of Patent: May 30, 2000
    Assignee: Lam Researh Corporation
    Inventors: Robert John O'Donnell, Gregory James Goldspring