Abstract: This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.

Abstract: This invention provides a dielectric composition comprising a dielectric which is fireable in air at a temperature in the range of about 450° C. to about 550° C. and a conductive oxide selected from the group consisting of antimony-doped tin oxide, tin-doped indium oxide, a transition metal oxide which has mixed valence states or will form mixed valence states after firing in a nitrogen atmosphere at a temperature in the range of about 450° C. to about 550° C. and normally conducting precious metal oxides such as ruthenium dioxide, wherein the amount of conductive oxide present is from about 0.25 wt % to about 25 wt % of the total weight of dielectric and conductive oxide. This dielectric composition has reduced electrical resistance and is useful in electron field emission devices to eliminate charging of the dielectric in the vicinity of the electron emitter and the effect of static charge induced field emission.

Abstract: This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.

Abstract: This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.

Abstract: This invention provides a dielectric composition comprising a dielectric which is fireable in air at a temperature in the range of about 450° C. to about 550° C. and a conductive oxide selected from the group consisting of antimony-doped tin oxide, tin-doped indium oxide, a transition metal oxide which has mixed valence states or will form mixed valence states after firing in a nitrogen atmosphere at a temperature in the range of about 450° C. to about 550° C. and normally conducting precious metal oxides such as ruthenium dioxide, wherein the amount of conductive oxide present is from about 0.25 wt % to about 25 wt % of the total weight of dielectric and conductive oxide. This dielectric composition has reduced electrical resistance and is useful in electron field emission devices to eliminate charging of the dielectric in the vicinity of the electron emitter and the effect of static charge induced field emission.

Abstract: This invention provides a dielectric composition comprising a dielectric which is fireable in air at a temperature in the range of about 450° C. to about 550° C. and a conductive oxide selected from the group consisting of antimony-doped tin oxide, tin-doped indium oxide, a transition metal oxide which has mixed valence states or will form mixed valence states after firing in a nitrogen atmosphere at a temperature in the range of about 450° C. to about 550° C. and normally conducting precious metal oxides such as ruthenium dioxide, wherein the amount of conductive oxide present is from about 0.25 wt % to about 25 wt % of the total weight of dielectric and conductive oxide. This dielectric composition has reduced electrical resistance and is useful in electron field emission devices to eliminate charging of the dielectric in the vicinity of the electron emitter and the effect of static charge induced field emission.

Abstract: This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.

Abstract: This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.

Abstract: This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.

Abstract: This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.

Abstract: This invention provides a dielectric composition comprising a dielectric which is fireable in air at a temperature in the range of about 450° C. to about 550° C. and a conductive oxide selected from the group consisting of antimony-doped tin oxide, tin-doped indium oxide, a transition metal oxide which has mixed valence states or will form mixed valence states after firing in a nitrogen atmosphere at a temperature in the range of about 450° C. to about 550° C. and normally conducting precious metal oxides such as ruthenium dioxide, wherein the amount of conductive oxide present is from about 0.25 wt % to about 25 wt % of the total weight of dielectric and conductive oxide. This dielectric composition has reduced electrical resistance and is useful in electron field emission devices to eliminate charging of the dielectric in the vicinity of the electron emitter and the effect of static charge induced field emission.

Abstract: Patterned ion-bombarded graphite electron emitters are disclosed as well as processes for producing them. The electron emitters are produced by forming a layer of composite of graphite particles and glass on a substrate then bombarding the composite with an ion beam. The electron emitters are useful in field emitter cathode assemblies which are fabricated into flat panel displays.

Abstract: Patterned graphite electron emitters are disclosed. These field emitters find particular usefulness in field emitter cathodes and display panels. These graphite field emitters can be formed by screen printing a paste comprised of graphite and electrically insulating material (glass frit) in the desired patterned paste and bombarding the fire product with an ion beam.

Abstract: Wire-coated graphite electron emitters are disclosed. These field emitters find particular usefulness in field emitter cathodes, display panels and lighting devices. These graphite field emitters can be formed by coating a paste comprised of graphite and glass frit onto the wire, firing the paste and bombarding the fired product with an ion beam.

Abstract: Patterned ion-bombarded carbon electron emitters and the processes for producing them. The electron emitters are produced by forming a layer of composite of carbon particles and glass on a substrate then bombarding the composite with an ion beam. The electron emitters are useful in field emitter cathode assemblies which are fabricated into flat panel displays.

Abstract: This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitterwherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.

Abstract: Multilayer capacitors of good electrical properties can be made by firing, in air at low temperatures, certain modified lead titanate dielectric compositions. The dielectric compositions have the formula(Sr.sub.x Pb.sub.1-x TiO.sub.3).sub.a (PbMg.sub.0.5 W.sub.0.5 O.sub.3).sub.bwhereinx is 0-0.10,a is 0.35-0.5,b is 0.5-0.65, anda plus b equals 1.

Abstract: Finely divided dielectric powder compositions having the formula (Sr.sub.x Pb.sub.1-x TiO.sub.3).sub.a (PbMg.sub.0.5 W.sub.0.5 O.sub.3).sub.b whereinx is 0-0.10,a is 0.35-0.5,b is 0.5-0.65, anda plus b equals one,Said compositions having been calcined in air at 750.degree.-900.degree. C. for at least 5 minutes. These powder compositions may be formed into the desired shape and sintered in air at reduced temperatures to produce dielectric bodies of improved properties.

Abstract: Powder compositions comprising finely divided solid solutions of certain pyrochlore-related oxides and glass powder, and thermistors thereof, useful in the electronics art.