Patents by Inventor ROBERT JR GAUTHIER JR

ROBERT JR GAUTHIER JR has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11398565
    Abstract: A silicon controlled rectifier is provided. The silicon controlled rectifier comprises a substrate and a first n-well in the substrate. A p+ anode region may be arranged in the first n-well in the substrate. A first p-well may be arranged in the first n-well in the substrate. An n+ cathode region may be arranged in the first p-well in the substrate. A field oxide layer may be arranged over a first portion of the first p-well. A first gate electrode layer may extend over a second portion of the first p-well and over a portion of the field oxide layer.
    Type: Grant
    Filed: December 7, 2020
    Date of Patent: July 26, 2022
    Assignee: GlobalFoundries Singapore Pte. Ltd.
    Inventors: Prantik Mahajan, Raunak Kumar, Kyong Jin Hwang, Robert JR Gauthier, Jr.
  • Publication number: 20220181474
    Abstract: A silicon controlled rectifier is provided. The silicon controlled rectifier comprises a substrate and a first n-well in the substrate. A p+ anode region may be arranged in the first n-well in the substrate. A first p-well may be arranged in the first n-well in the substrate. An n+ cathode region may be arranged in the first p-well in the substrate. A field oxide layer may be arranged over a first portion of the first p-well. A first gate electrode layer may extend over a second portion of the first p-well and over a portion of the field oxide layer.
    Type: Application
    Filed: December 7, 2020
    Publication date: June 9, 2022
    Inventors: PRANTIK MAHAJAN, RAUNAK KUMAR, KYONG JIN HWANG, ROBERT JR GAUTHIER JR