Patents by Inventor Robert K. Becker

Robert K. Becker has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9540725
    Abstract: Provided is a method of controlling a gas cluster ion beam (GCIB) system for processing structures on a substrate. A GCIB system comprises deflection plates for directing a GCIB towards a substrate, the GCIB system coupled to a substrate scanning device configured to move a substrate in three dimensions. The substrate is exposed to the GCIB while the substrate is being moved by the substrate scanning device. A controller is used to control a set of deflection operating parameters comprising a deflection angle ?, voltage differential of the deflection plates, frequency of the deflection plate power, beam current, substrate distance, pressure in the nozzle, gas flow rate in the process chamber, separation of beam burns, duration of the bean burn, and/or duty cycle of the beam deflector output.
    Type: Grant
    Filed: April 24, 2015
    Date of Patent: January 10, 2017
    Assignee: TEL Epion Inc.
    Inventors: Kenneth Regan, Yan Shao, Robert K. Becker, Christopher K. Olsen
  • Patent number: 9343259
    Abstract: A nozzle assembly used for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the nozzle assembly includes two or more conical nozzles that are aligned such that they are both used to generate the same GCIB. The first conical nozzle may include the throat that initially forms the GCIB and the second nozzle may form a larger conical cavity that may be appended to the first conical nozzle. A transition region may be disposed between the two conical nozzles that may substantially cylindrical and slightly larger than the largest diameter of the first conical nozzle.
    Type: Grant
    Filed: July 31, 2015
    Date of Patent: May 17, 2016
    Assignee: TEL Epion Inc.
    Inventors: Matthew C. Gwinn, Avrum Freytsis, Robert K. Becker
  • Patent number: 9305746
    Abstract: A method of assembling a nozzle/skimmer module includes coupling a nozzle assembly and skimmer cartridge assembly in a rigid tandem configuration to more accurately control the formation of the Gas Cluster Ion Beam (GCIB). The nozzle/skimmer module is pre-aligned before installation in a production GCIB processing system to more accurately position the GCIB.
    Type: Grant
    Filed: January 9, 2014
    Date of Patent: April 5, 2016
    Assignee: TEL Epion Inc.
    Inventors: Robert K. Becker, Avrum Freytsis
  • Publication number: 20160042909
    Abstract: A nozzle assembly used for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the nozzle assembly includes two or more conical nozzles that are aligned such that they are both used to generate the same GCIB. The first conical nozzle may include the throat that initially forms the GCIB and the second nozzle may form a larger conical cavity that may be appended to the first conical nozzle. A transition region may be disposed between the two conical nozzles that may substantially cylindrical and slightly larger than the largest diameter of the first conical nozzle.
    Type: Application
    Filed: July 31, 2015
    Publication date: February 11, 2016
    Inventors: Matthew C. Gwinn, Avrum Freytsis, Robert K. Becker
  • Publication number: 20150332924
    Abstract: Provided is a method of controlling a gas cluster ion beam (GCIB) system for processing structures on a substrate. A GCIB system comprises deflection plates for directing a GCIB towards a substrate, the GCIB system coupled to a substrate scanning device configured to move a substrate in three dimensions. The substrate is exposed to the GCIB while the substrate is being moved by the substrate scanning device. A controller is used to control a set of deflection operating parameters comprising a deflection angle ?, voltage differential of the deflection plates, frequency of the deflection plate power, beam current, substrate distance, pressure in the nozzle, gas flow rate in the process chamber, separation of beam burns, duration of the bean burn, and/or duty cycle of the beam deflector output.
    Type: Application
    Filed: April 24, 2015
    Publication date: November 19, 2015
    Inventors: Kenneth Regan, Yan Shao, Robert K. Becker, Christopher K. Olsen
  • Patent number: 9029808
    Abstract: Disclosed are an apparatus, system, and method for scanning a substrate or other workpiece through a gas-cluster ion beam (GCIB), or any other type of ion beam. The workpiece scanning apparatus is configured to receive and hold a substrate for irradiation by the GCIB and to scan it through the GCIB in two directions using two movements: a reciprocating fast-scan movement, and a slow-scan movement. The slow-scan movement is actuated using a servo motor and a belt drive system, the belt drive system being configured to reduce the failure rate of the workpiece scanning apparatus. The apparatus further includes shields and other features for reducing process contamination resulting from scattering of the GCIB from the scanning apparatus.
    Type: Grant
    Filed: July 28, 2014
    Date of Patent: May 12, 2015
    Assignee: TEL Epion Inc.
    Inventors: Matthew C. Gwinn, Avrum Freytsis, Jerry Negrotti, Robert K. Becker
  • Patent number: 8981322
    Abstract: Disclosed is a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system, and associated methods of operation to grow, modify, deposit, or dope a layer upon a substrate. The multiple nozzle and skimmer assembly includes at least two nozzles arranged in mutual close proximity to at least partially coalesce the gas cluster beams emitted therefrom into a single gas cluster beam and/or angled to converge each beam toward a single intersecting point to form a set of intersecting gas cluster beams, and to direct the single and/or intersecting gas cluster beam into a gas skimmer.
    Type: Grant
    Filed: April 23, 2009
    Date of Patent: March 17, 2015
    Assignee: TEL Epion Inc.
    Inventors: Martin D. Tabat, Matthew C. Gwinn, Robert K. Becker, Avrum Freytsis, Michael Graf
  • Publication number: 20140123457
    Abstract: A method of assembling a nozzle/skimmer module includes coupling a nozzle assembly and skimmer cartridge assembly in a rigid tandem configuration to more accurately control the formation of the Gas Cluster Ion Beam (GCIB). The nozzle/skimmer module is pre-aligned before installation in a production GCIB processing system to more accurately position the GCIB.
    Type: Application
    Filed: January 9, 2014
    Publication date: May 8, 2014
    Applicant: TEL EPION INC.
    Inventors: Robert K. Becker, Avrum Freytsis
  • Publication number: 20130082189
    Abstract: A pre-aligned multi-output nozzle/skimmer (PMNS) module includes a pre-aligned nozzle assembly having at least two nozzles and a pre-aligned skimmer subassembly. The PMNS module can be pre-aligned to more accurately position a Multi-Beam Gas Cluster Ion Beam (MBGCIB), and to more accurately control the formation of the multi-beam gas clusters of a pre-aligned MBGCIB.
    Type: Application
    Filed: September 30, 2011
    Publication date: April 4, 2013
    Applicant: TEL EPION INC.
    Inventors: Robert K. Becker, Avrum Freytsis, Matthew Gwinn
  • Patent number: 8338806
    Abstract: A processing system is provided for irradiating a substrate with a gas cluster ion beam (GCIB). The system includes a nozzle for forming and emitting gas cluster beams through a nozzle outlet, and a stagnation chamber that is located upstream of and adjacent the nozzle. The stagnation chamber has an inlet, and the nozzle is configured to direct a single gas cluster beam toward the substrate. An ionizer is positioned downstream of the outlet and is configured to ionize the gas cluster beam to form the GCIB. The system also includes a gas supply that is in fluid communication with the inlet of the stagnation chamber, and which includes a gas source and a valve located between the gas source and the nozzle for controlling flow of a gas between the gas source and the nozzle.
    Type: Grant
    Filed: May 5, 2010
    Date of Patent: December 25, 2012
    Assignee: TEL Epion Inc.
    Inventors: Michael Graf, Robert K. Becker, Christopher T. Reddy, Noel Russell
  • Patent number: 8304033
    Abstract: Disclosed are methods of operation to grow, modify, deposit, or dope a layer upon a substrate using a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system. Also disclosed is a method of forming a shallow trench isolation (STI) structure on a substrate, for example, an SiO2 STI structure, using a multiple nozzle system with two separate gas supplies, for example providing a silicon-containing gas and an oxygen-containing gas.
    Type: Grant
    Filed: April 23, 2009
    Date of Patent: November 6, 2012
    Assignee: TEL Epion Inc.
    Inventors: Martin D. Tabat, Matthew C. Gwinn, Robert K. Becker, Avrum Freytsis, Michael Graf
  • Patent number: 8097860
    Abstract: A gas cluster ion beam (GCIB) processing system using multiple nozzles for forming and emitting at least one GCIB and methods of operating thereof are described. The GCIB processing system may be configured to treat a substrate, including, but not limited to, doping, growing, depositing, etching, smoothing, amorphizing, or modifying a layer thereupon. Furthermore, the GCIB processing system may be operated to produce a first GCIB and a second GCIB, and to irradiate a substrate simultaneously and/or sequentially with the first GCIB and second GCIB.
    Type: Grant
    Filed: March 26, 2010
    Date of Patent: January 17, 2012
    Assignee: TEL Epion Inc.
    Inventors: Martin D. Tabat, Matthew C. Gwinn, Robert K. Becker, Avrum Freytsis, Michael Graf
  • Publication number: 20110272594
    Abstract: A processing system is provided for irradiating a substrate with a gas cluster ion beam (GCIB). The system includes a nozzle for forming and emitting gas cluster beams through a nozzle outlet, and a stagnation chamber that is located upstream of and adjacent the nozzle. The stagnation chamber has an inlet, and the nozzle is configured to direct a single gas cluster beam toward the substrate. An ionizer is positioned downstream of the outlet and is configured to ionize the gas cluster beam to form the GCIB. The system also includes a gas supply that is in fluid communication with the inlet of the stagnation chamber, and which includes a gas source and a valve located between the gas source and the nozzle for controlling flow of a gas between the gas source and the nozzle.
    Type: Application
    Filed: May 5, 2010
    Publication date: November 10, 2011
    Applicant: TEL Epion Inc.
    Inventors: Michael Graf, Robert K. Becker, Christopher T. Reddy, Noel Russell
  • Publication number: 20110240602
    Abstract: The invention includes a high-voltage gas cluster ion beam (GCIB) processing system for treating a workpiece using a gas cluster ion beam. The high-voltage GCIB processing system includes a high-voltage (HV) source system that includes a high-voltage (HV) source chamber having a high-voltage (HV) nozzle subassembly, a nozzle element, and a high-voltage (HV) skimmer subassembly therein. The high-voltage gas cluster ion beam (GCIB) processing system includes a high-voltage (HV) power supply coupled to the HV nozzle subassembly and the HV skimmer subassembly. A high-voltage (HV) ionization chamber can be coupled to the HV source chamber and can include an ionizer coupled to the chamber wall by an isolation structure. In addition, a grounded GCIB processing chamber can be coupled to the HV ionization chamber by an isolation structure and can include a scanable workpiece holder.
    Type: Application
    Filed: March 30, 2010
    Publication date: October 6, 2011
    Applicant: TEL Epion Inc.
    Inventors: Robert K. Becker, Matthew C. Gwinn, Kenneth P. Regan
  • Publication number: 20100243913
    Abstract: The pre-aligned nozzle/skimmer module includes an internal pre-aligned nozzle assembly and internal pre-aligned skimmer cartridge assembly to more accurately control the formation of the Gas Cluster Ion Beam (GCIB). The nozzle/skimmer module can be pre-aligned to more accurately position the GCIB. The pre-aligned nozzle/skimmer module more accurately controls the formation of the gas clusters of a pre-aligned Gas Cluster Ion Beam (GCIB).
    Type: Application
    Filed: March 31, 2009
    Publication date: September 30, 2010
    Applicant: TEL EPION INC.
    Inventors: Robert K. Becker, Avrum Freytsis
  • Publication number: 20100193472
    Abstract: A gas cluster ion beam (GCIB) processing system using multiple nozzles for forming and emitting at least one GCIB and methods of operating thereof are described. The GCIB processing system may be configured to treat a substrate, including, but not limited to, doping, growing, depositing, etching, smoothing, amorphizing, or modifying a layer thereupon. Furthermore, the GCIB processing system may be operated to produce a first GCIB and a second GCIB, and to irradiate a substrate simultaneously and/or sequentially with the first GCIB and second GCIB.
    Type: Application
    Filed: March 26, 2010
    Publication date: August 5, 2010
    Applicant: TEL EPION INC.
    Inventors: Martin D. Tabat, Matthew C. Gwinn, Robert K. Becker, Avrum Freytsis, Michael Graf
  • Publication number: 20100193701
    Abstract: Disclosed is a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system, and associated methods of operation to grow, modify, deposit, or dope a layer upon a substrate. The multiple nozzle and skimmer assembly includes at least two nozzles arranged in mutual close proximity to at least partially coalesce the gas cluster beams emitted therefrom into a single gas cluster beam and/or angled to converge each beam toward a single intersecting point to form a set of intersecting gas cluster beams, and to direct the single and/or intersecting gas cluster beam into a gas skimmer.
    Type: Application
    Filed: April 23, 2009
    Publication date: August 5, 2010
    Applicant: TEL Epion Inc.
    Inventors: Martin D. Tabat, Matthew C. Gwinn, Robert K. Becker, Avrum Freytsis, Michael Graf
  • Publication number: 20100193708
    Abstract: Disclosed are methods of operation to grow, modify, deposit, or dope a layer upon a substrate using a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system. Also disclosed is a method of forming a shallow trench isolation (STI) structure on a substrate, for example, an SiO2 STI structure, using a multiple nozzle system with two separate gas supplies, for example providing a silicon-containing gas and an oxygen-containing gas.
    Type: Application
    Filed: April 23, 2009
    Publication date: August 5, 2010
    Applicant: TEL EPION INC.
    Inventors: Martin D. Tabat, Matthew C. Gwinn, Robert K. Becker, Avrum Freytsis, Michael Graf
  • Patent number: 7060988
    Abstract: Apparatus and methods for improving beam stability in high current gas-cluster ion beam systems by reducing the frequency of transients occurring in the vicinity of the ionizer through use of shielding conductors and distinct component electrical biasing to inhibit backward extraction of ions from the ionizer towards the gas-jet generator.
    Type: Grant
    Filed: March 17, 2005
    Date of Patent: June 13, 2006
    Assignee: Epion Corporation
    Inventors: Michael E. Mack, Robert K. Becker, Matthew C. Gwinn
  • Patent number: 6676989
    Abstract: Numerous studies suggest that the current popular designs of coronary stents are functionally equivalent and suffer a 16 to 22 percent rate of restenosis. Although the use of coronary stents is growing, the benefits of their use remain controversial in certain clinical situations or indications due to their potential complications. The application of gas cluster ion beam (GCIB) surface modification such as smoothing or cleaning appears to reduce these complications and lead to genuine cost savings and an improvement in patient quality of life. The present invention is directed to the use of GCIB surface modification to overcome prior problems of thrombosis and restenosis. The atomic level surface smoothing of stents utilizing GCIB substantially reduces undesirable surface micro-roughness in medical coronary stents.
    Type: Grant
    Filed: July 9, 2001
    Date of Patent: January 13, 2004
    Assignee: Epion Corporation
    Inventors: Allen R. Kirkpatrick, Robert K. Becker, Avrum Freytsis