Abstract: The present invention provides a method for fabricating a capacitor within a semiconductor device comprising the steps of forming openings in an oxide dielectric to reach a lower conductor layer which will serve as a lower conductor plate of the capacitor; depositing capacitor electrode material, such as tungsten to fill the openings to form a capacitor electrode and planarizing the filled openings using chemical/mechanical polish; depositing a selected oxide capacitor dielectric over the capacitor electrodes and patterning the capacitor dielectric with photoresist to leave dielectric covering the area of the capacitor electrodes; stripping away the photoresist; adding an upper conductor layer on top of the capacitor dielectric to serve as the top plate of the capacitor. The above steps may be repeated to form multiple layers of capacitors within the semiconductor device.

Abstract: The present invention provides a method for fabricating a capacitor within a semiconductor device comprising the steps of forming openings in an oxide dielectric to reach a lower conductor layer which will serve as a lower conductor plate of the capacitor; depositing capacitor electrode material, such as tungsten to fill the openings to form a capacitor electrode and planarizing the filled openings using chemical/mechanical polish; depositing a selected oxide capacitor dielectric over the capacitor electrodes and patterning the capacitor dielectric with photoresist to leave dielectric covering the area of the capacitor electrodes; stripping away the photoresist; adding an upper conductor layer on top of the capacitor dielectric to serve as the top plate of the capacitor. The above steps may be repeated to form multiple layers of capacitors within the semiconductor device.

Abstract: A lateral bipolar transistor and method of making which is compatible with making BICMOS circuits are disclosed. The method includes: Forming on a substrate of one conductivity type at least one layer of a semiconductor material of opposite conductivity type. Forming a first region of opposite conductivity type into one portion of the layer and a highly conductive contact region to the layer in another portion, forming a layer of an insulating material over the layer and providing an aperture therethrough to the first region. Depositing a layer of polycrystalline silicon over the insulating layer and in the aperture so that it is in the aperture and extends a short distance beyond the aperture but not beyond the edge of the first region.

Abstract: A circuit for generating a negative voltage includes: a bipolar transistor including, a) an N type collector region, b) a P type base region, and c) an N type emitter region, the base region width between the emitter region and the collector region being less than about 5,000 angstroms and the dopant concentration of the base region being in the range of about 1-10.times.10.sup.18 atoms/cm.sup.3 ; means for applying a reference potential to the base region; and means for applying a bias potential to the emitter region so as to generate a negative output potential at the collector region. The circuit can likewise comprise a PNP bipolar transistor biased to generate a negative voltage. The circuit can be used on integrated circuit chips to provide a complementary voltage, thereby obviating the requirement for separate, complementary power supplies.

Abstract: A method of controlling the interfacial oxygen concentration of a monocrystalline/polycrystalline emitter includes the steps of: passivating the monocrystalline silicon surface by immersing the wafer in a diluted HF acid solution; transferring the wafer into a high vacuum environment; heating the wafer to between 400.degree. and 700.degree. C.; exposing the monocrystalline silicon surface to a gas having a partial pressure of oxygen of between 10.sup.-5 to 1 Torr for between 1 and 100 minutes; and, depositing polysilicon onto the monocrystalline silicon surface.

Abstract: A lateral bipolar transistor and method of making the transistor which is compatible with a method of making MOS transistors to be used in making BICMOS circuits are disclosed. The method includes the following steps: Forming on the surface of a substrate of one conductivity type at least one layer of a semiconductor material of the opposite conductivity type. Forming a first region of the opposite conductivity type into one portion of the layer in one of the portions of the layer and a highly conductive contact region to the layer in another portion, forming a layer of an insulating material over the layer and providing an aperture therethrough to the first region. Depositing a layer of polycrystalline silicon over the insulating layer and in the aperture and defining the polycrystalline silicon layer so that it is in the aperture and extends a short distance beyond the aperture but not beyond the edge of the first region.

Abstract: A method of forming a complementary bipolar transistor device includes the steps of: providing a substrate of semiconductor material including at least two electrically isolated N-type device regions having a generally planar common surface; forming a P-type buried subcollar region in a first of the device regions; forming an N-type buried subcollector region in a second of the device regions; forming an N-type base region in the common surface of the first device region; forming a layer of P-doped polysilicon over the base region in the first device region and over the second device region; patterning the layer of P-doped polysilicon to form an emitter contact generally centered on the base region of the first device region and a generally annular base contact on the second device region; forming a layer of insulating material over the patterned layer of P-doped polysilicon; forming a layer of N-doped polysilicon generally conformally over the device; patterning the layer of N-doped polysilicon to form a bas

Abstract: A method is disclosed for making submicron openings in a substrate. A mesa is formed on the substrate by reactive ion etching techniques. A film is deposited over the entire structure and the mesa is selectively etched away to yield a submicron-sized opening in the film. Using the film as a mask, the substrate exposed thereby is reactively ion etched. An example is given for producing an emitter mask for a polycrystalline silicon base bipolar transistor.