Patents by Inventor Robert K. Dawless
Robert K. Dawless has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6332969Abstract: A cermet composite material is made by treating at an elevated temperature a mixture comprising a compound of iron and a compound of at least one other metal, together with an alloy or mixture of copper and a noble metal. The alloy or mixture preferably comprises particles having an interior portion containing more copper than noble metal and an exterior portion containing more noble metal than copper. The noble metal is preferably silver. The cermet composite material preferably includes alloy phase portions and a ceramic phase portion. At least part of the ceramic phase portion preferably has a spinel structure.Type: GrantFiled: July 24, 2000Date of Patent: December 25, 2001Assignee: Alcoa Inc.Inventors: Siba P. Ray, Robert W. Woods, Robert K. Dawless, Robert B. Hosler
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Patent number: 6126799Abstract: A cermet composite material is made by treating at an elevated temperature a mixture comprising a compound of iron and a compound of at least one other metal, together with an alloy or mixture of copper and a noble metal. The alloy or mixture preferably comprises particles having an interior portion containing more copper than noble metal and an exterior portion containing more noble metal than copper. The noble metal is preferably silver. The cermet composite material preferably includes alloy phase portions and a ceramic phase portion. At least part of the ceramic phase portion preferably has a spinel structure.Type: GrantFiled: February 1, 1999Date of Patent: October 3, 2000Assignee: Alcoa Inc.Inventors: Siba P. Ray, Robert W. Woods, Robert K. Dawless, Robert B. Hosler
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Patent number: 6030518Abstract: Aluminum is produced by electrolytic reduction of alumina in a cell having a cathode, an inert anode and a molten salt bath containing metal fluorides and alumina. The inert anode preferably contains copper, silver and oxides of iron and nickel. Reducing the molten salt bath temperature to about 900-950.degree. C. lowers corrosion on the inert anode constituents.Type: GrantFiled: September 10, 1997Date of Patent: February 29, 2000Assignee: Aluminum Company of AmericaInventors: Robert K. Dawless, Siba P. Ray, Robert B. Hosler, Robert L. Kozarek, Alfred F. LaCamera
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Patent number: 5938914Abstract: An electrolytic cell for reduction of a metal oxide to a metal and oxygen has an inert anode and an upwardly angled roof covering the inert mode. The angled roof diverts oxygen bubbles into an upcomer channel, thereby agitating a molten salt bath in the upcomer channel and improving dissolution of a metal oxide in the molten salt bath. The molten salt bath has a lower velocity adjacent the inert anode in order to minimize corrosion by substances in the bath. A particularly preferred cell produces aluminum by electrolysis of alumina in a molten salt bath containing aluminum fluoride and sodium fluoride.Type: GrantFiled: September 19, 1997Date of Patent: August 17, 1999Assignee: Aluminum Company of AmericaInventors: Robert K. Dawless, Alfred F. LaCamera, R. Lee Troup, Siba P. Ray, Robert B. Hosler
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Patent number: 5865980Abstract: An inert electrode material is made by reacting at an elevated temperature a mixture preferably comprising iron oxide, at least one other metal oxide, copper and silver. The reaction produces a material having ceramic phase portions and alloy phase portions, wherein the alloy phase portions have copper-rich interior portions and silver-rich exterior portions. Inert anodes made with a reaction mixture containing copper and silver have lower wear rates than inert anodes made with copper and no silver.Type: GrantFiled: June 26, 1997Date of Patent: February 2, 1999Assignee: Aluminum Company of AmericaInventors: Siba P. Ray, Robert W. Woods, Robert K. Dawless, Robert B. Hosler
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Patent number: 5071523Abstract: The present invention provides a process for purifying aluminum and lithium including recovering aluminum and lithium through layered electrolysis through a lithium transport cell to form purified lithium metal and residual aluminum and purifying the residual aluminum through a second stage layered electrolysis through a second stage lithium transport cell to form purified aluminum metal. In one aspect, the process provides the second stage step for purifying the residual aluminum by chlorinating the residual aluminum to form a purified aluminum.In one aspect, layered electrolysis is provided by a three-layered electrolysis cell including an end layer of molten aluminum-lithium alloy, a middle layer of molten salt electrolyte, and an opposite end layer of molten lithium.Type: GrantFiled: October 13, 1989Date of Patent: December 10, 1991Assignee: Aluminum Company of AmericaInventors: Roy A. Christini, Robert K. Dawless
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Patent number: 4822585Abstract: A method for purifying silicon comprises the steps of providing a body of molten silicon-rich material in a solvent metal comprising copper or copper-aluminum combination and extracting heat therefrom to provide a solid phase containing silicon in crystal form and to concentrate impurities in a molten phase. After a desired amount of heat has been extracted, a substantial part of the molten phase is separated from the solid phase. A fraction or portion of the solid phase is remelted for purposes of removing solvent metal comprising copper or copper-aluminum solvent metal, including impurities, from the crystals, and at least one fraction of the remelted material is separated from the crystals.Type: GrantFiled: May 5, 1982Date of Patent: April 18, 1989Assignee: Aluminum Company of AmericaInventor: Robert K. Dawless
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Patent number: 4440610Abstract: An improved process for the electrolytic production of aluminum by electrolysis of aluminum chloride in a molten salt electrolyte bath. The improved process is characterized by a reduction in solubility of the reduced aluminum metal as well as a smaller metal droplet size permitting closer anode-cathode spacing in the electrolysis cell and a lower electrical resistance. The improvement comprises performing the electrolysis in an electrolyte consisting essentially of from 0.5 to 15 wt. % aluminum chloride, from 0.5 to 40 wt. % of one or more alkaline earth metal chlorides selected from the class consisting of magnesium chloride, barium chloride, strontium chloride and calcium chloride, from 10 to 90 wt. % lithium chloride and the balance sodium chloride.Type: GrantFiled: September 27, 1982Date of Patent: April 3, 1984Assignee: Aluminum Company of AmericaInventors: Robert K. Dawless, Alfred F. LaCamera, Chester H. Klingensmith
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Patent number: 4411747Abstract: A method for purifying aluminum that contains impurities, the method including the step of introducing such aluminum containing impurities to a charging and melting chamber located in an electrolytic cell of the type having a porous diaphragm permeable by the electrolyte of the cell and impermeable to molten aluminum. The method includes further the steps of supplying impure aluminum from the chamber to the anode area of the cell and electrolytically transferring aluminum from the anode area to the cathode through the diaphragm while leaving impurities in the anode area, thereby purifying the aluminum introduced into the chamber. The method includes the further steps of collecting the purified aluminum at the cathode, and lowering the level of impurities concentrated in the anode area by subjecting molten aluminum and impurities in said chamber to a fractional crystallization treatment wherein eutectic-type impurities crystallize and precipitate out of the aluminum.Type: GrantFiled: August 30, 1982Date of Patent: October 25, 1983Assignee: Aluminum Company of AmericaInventors: Robert K. Dawless, Kenneth A. Bowman, Robert M. Mazgaj, C. Norman Cochran
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Patent number: 4312847Abstract: A method for purifying silicon comprises the steps of providing a body of molten silicon-rich material and extracting heat therefrom to provide a solid phase containing silicon in crystal form and to concentrate impurities in a molten phase. After a desired amount of heat has been extracted, a substantial part of the molten phase is separated from the solid phase. A fraction or portion of the solid phase is remelted for purposes of removing solvent metal, including impurities, from the crystals, and at least one fraction of the remelted material is separated from the crystals.Type: GrantFiled: September 9, 1980Date of Patent: January 26, 1982Assignee: Aluminum Company of AmericaInventor: Robert K. Dawless
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Patent number: 4312848Abstract: A method of removing boron impurity in a process for purifying silicon is disclosed wherein silicon is crystallized from a solvent metal. The method comprises the steps of providing a molten body containing silicon, the remainder aluminum and impurities and providing a metal selected from the group consisting of titanium, vanadium and zirconium therein, the metal from the group forming a reaction product with boron and permitting the reaction product to settle in the body for removal purposes.Type: GrantFiled: September 9, 1980Date of Patent: January 26, 1982Assignee: Aluminum Company of AmericaInventor: Robert K. Dawless
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Patent number: 4312846Abstract: A method for purifying silicon comprises the steps of providing a body of molten silicon-rich material in a vessel having an upwardly removable first bottom therein and extracting heat therefrom to provide a solid phase containing silicon in crystal form and to concentrate impurities in a molten phase. After a desired amount of heat has been extracted, a substantial part of the molten phase is separated from the solid phase. A fraction or portion of the solid phase is remelted for purposes of removing solvent metal, including impurities, from the crystals, and at least one fraction of the remelted material is separated from the crystals. The crystals are removed from the vessel by upwardly withdrawing the removable bottom.Type: GrantFiled: September 9, 1980Date of Patent: January 26, 1982Assignee: Aluminum Company of AmericaInventor: Robert K. Dawless
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Patent number: 4294612Abstract: An improved fractional crystallization process for the purification of aluminum is provided which comprises supplying at least a portion of the heat to the fractional crystallization apparatus adjacent the bottom of the apparatus, the apparatus provided with a high purity refractory liner resistant to attack by molten aluminum. Impure, molten aluminum is removed from the apparatus by an upper exit port. After initial crystallization of the purified aluminum and removal of at least a portion of the impure molten aluminum, the crystals may be remelted for purposes of recovering purified aluminum.Type: GrantFiled: November 30, 1979Date of Patent: October 13, 1981Assignee: Aluminum Company of AmericaInventors: Robert K. Dawless, Robert E. Graziano
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Patent number: 4273627Abstract: A process for purifying impure aluminum comprises introducing the impure aluminum to the anode layer of an electrolytic cell of the type having a bottom layer of molten aluminum-copper alloy constituting the anode layer and having a top layer of molten aluminum constituting a cathode layer, the cathode and anode layers separated by an electrolyte layer. Aluminum is electrolytically transported from the anode to the cathode in a first purification step and then treated with a carbonaceous material to remove magnesium therefrom. Thereafter, the treated portion is fractionally crystallized to remove further impurities therefrom by crystallizing pure aluminum and separating the molten remaining part, which is high in impurities, from the purified aluminum. The impure molten aluminum portion is then recycled back to the electrolytic cell or to another fractional crystallization step.Type: GrantFiled: December 26, 1979Date of Patent: June 16, 1981Assignee: Aluminum Company of AmericaInventors: Robert K. Dawless, Stanley C. Jacobs
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Patent number: 4256717Abstract: A method for purifying silicon comprises the steps of providing a body of molten silicon-rich material and extracting heat therefrom to provide a solid phase containing silicon in crystal form and to concentrate impurities in a molten phase. After a desired amount of heat has been extracted, a substantial part of the molten phase is separated from the solid phase. A fraction or portion of the solid phase is remelted for purposes of removing solvent metal, including impurities, from the crystals, and at least one fraction of the remelted material is separated from the crystals.Type: GrantFiled: May 24, 1979Date of Patent: March 17, 1981Assignee: Aluminum Company of AmericaInventor: Robert K. Dawless
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Patent number: 4246249Abstract: A method for purifying silicon comprises the steps of providing a body of molten silicon-rich material and extracting heat therefrom to provide a solid phase containing silicon in crystal form and to concentrate impurities in a molten phase. After a desired amount of heat has been extracted, a substantial part of the molten phase is separated from the solid phase. A fraction or portion of the solid phase is remelted for purposes of removing solvent metal, including impurities, from the crystals, and at least one fraction of the remelted material is separated from the crystals.Type: GrantFiled: May 24, 1979Date of Patent: January 20, 1981Assignee: Aluminum Company of AmericaInventor: Robert K. Dawless
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Patent number: 4239606Abstract: A process for purifying impure aluminum comprises introducing the impure aluminum to the anode layer of an electrolytic cell of the type having a bottom layer of molten aluminum-copper alloy constituting the anode layer and having a top layer of molten aluminum constituting a cathode layer, the cathode and anode layers separated by an electrolyte layer. Aluminum is electrolytically transported from the anode to the cathode in a first purification step and then fractionally crystallized to remove further impurities therefrom by crystallizing pure aluminum and thereafter separating the molten remaining part, which is high in impurities, from the purified aluminum. The impure molten aluminum portion is then recycled back to the electrolytic cell or to another fractional crystallization step.Type: GrantFiled: December 26, 1979Date of Patent: December 16, 1980Assignee: Aluminum Company of AmericaInventors: Robert K. Dawless, Stanley C. Jacobs
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Patent number: 4222830Abstract: A process for purifying impure aluminum comprises introducing the impure aluminum to the anode layer of an electrolytic cell of the type having a bottom layer of molten aluminum-copper alloy constituting the anode layer and having a top layer of molten aluminum constituting a cathode layer, the cathode and anode layers separated by an electrolyte layer. Aluminum is electrolytically transported from the anode to the cathode in a first purification step and then fractionally crystallized to remove further impurities therefrom by crystallizing pure aluminum and thereafter separating the molten remaining part, which is high in impurities, from the purified aluminum. The impure molten aluminum portion is then recycled back to the electrolytic cell or to another fractional crystallization step.Type: GrantFiled: December 26, 1978Date of Patent: September 16, 1980Assignee: Aluminum Company of AmericaInventors: Robert K. Dawless, Stanley C. Jacobs
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Patent number: 4221590Abstract: An improved fractional crystallization process for the purification of aluminum is provided which comprises supplying at least a portion of the heat to the fractional crystallization apparatus adjacent the bottom of the apparatus. Impure, molten aluminum is removed from the apparatus by an upper exit port. After initial crystallization of the purified aluminum and removal of at least a portion of the impure molten aluminum, the crystals may be remelted for purposes of recovering purified aluminum.Type: GrantFiled: December 26, 1978Date of Patent: September 9, 1980Assignee: Aluminum Company of AmericaInventors: Robert K. Dawless, Robert E. Graziano, Arthur A. Bonarett