Patents by Inventor Robert K. Feeney

Robert K. Feeney has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5508610
    Abstract: An electrical conductivity tester accurately measures the time-varying electrical conductivity .sigma.(t) and steady-state electrical conductivity .sigma..sub.ss of a test material. In a first embodiment, the transmission phase of a probe circuit is monitored to determine the conductivity of a test material. In the first embodiment, an oscillator circuit generates a reference oscillator signal. A probe circuit receives the reference oscillator signal, magnetically couples to the test material, and modifies the reference oscillator signal via electromagnetic induction to derive a modified transmission phase signal. Finally, a phase detector circuit derives a transmission phase signal by combining the reference oscillator signal and the modified transmission phase signal, the transmission phase signal being directly convertible to the conductivity. In a second embodiment, an amplifier is connected to the probe circuit to form an oscillator circuit.
    Type: Grant
    Filed: December 3, 1992
    Date of Patent: April 16, 1996
    Assignee: Georgia Tech Research Corporation
    Inventors: Robert K. Feeney, Ajeet Rohatgi, David R. Hertling
  • Patent number: 5495170
    Abstract: An electrical conductivity tester accurately measures the time-varying electrical conductivity .sigma.(t) and steady-state electrical conductivity .sigma..sub.ss, of a test material. In a first embodiment, the transmission phase of a probe circuit is monitored to determine the conductivity of a test material. In the first embodiment, an oscillator circuit generates a reference oscillator signal. A probe circuit receives the reference oscillator signal, magnetically couples to the test material, and modifies the reference oscillator signal via electromagnetic induction to derive a modified transmission phase signal. Finally, a phase detector circuit derives a transmission phase signal by combining the reference oscillator signal and the modified transmission phase signal, the transmission phase signal being directly convertible to the conductivity. In a second embodiment, an amplifier is connected to the probe circuit to form an oscillator circuit.
    Type: Grant
    Filed: March 28, 1994
    Date of Patent: February 27, 1996
    Assignee: Georgia Tech Research Corporation
    Inventors: Robert K. Feeney, Ajeet Rohatgi, David R. Hertling
  • Patent number: 4874711
    Abstract: Method for altering an electrical characteristic of a circuit having at least one active semiconductor device involves applying at least one pulse--a voltage pulse, a current pulse, an energy pulse, or a power pulse and so forth--across the active semiconductor device, the pulse having sufficient amplitude of one or more of its electrical parameters and time duration to alter the electrical characteristics of the device, and thereby, the electrical characteristic of the circuit. The pulse is applied across the junction by applying it to at least one terminal or electrode which is contacted to semiconductor material disposed within the device.
    Type: Grant
    Filed: January 19, 1988
    Date of Patent: October 17, 1989
    Assignee: Georgia Tech Research Corporation
    Inventors: David W. Hughes, Robert K. Feeney, David R. Hertling
  • Patent number: 4820657
    Abstract: Method for altering an electrical characteristic of a circuit having at least one junction formed from a first and a second semiconductor material involves applying at least one pulse --a voltage pulse, a current pulse, an energy pulse, or a power pulse and so forth-- across the junction, the pulse having sufficient amplitude of one or more of its electrical parameters and time duration to alter the electrical characteristics of the junction, and thereby, the electrical characteristic of the circuit. The pulse is applied across the junction by applying it to at least one terminal or electrode which is contacted to the first or second semiconductor material. In addition, the amplitudes of the electrical parameters and time duration of the at least one pulse should be low enough to ensure that dendrites or filaments of material from the at least one electrode, for example, metal, are not formed in the first or second semiconductor material.
    Type: Grant
    Filed: May 26, 1987
    Date of Patent: April 11, 1989
    Assignee: Georgia Tech Research Corporation
    Inventors: David W. Hughes, Robert K. Feeney