Abstract: A method for the characterization of large scale wafer topography is applied to improving yields in the manufacture large scale integrated (LSI) devices. First, the heights at the center, the edge and an intermediate point are measured on eight equally spaced radii. This provides eight values each for Y.sub.s and Y.sub.e which are averaged. Then the shape angle .alpha. is computed using the following equation: ##EQU1## The shape magnitude M is also computed using the following equation: ##EQU2## The thus computed values of .alpha. and M are correlated with individual wafer characteristics as to device performance and yield. Based on these results, the wafer processing is controlled to provide optimal wafer yield and isolation characteristics.

Abstract: The formation of metal oxide contaminants on the surfaces of thin metal films by out-diffusion primarily through the grain boundaries thereof of metal from an underlayer is inhibited by conducting heat cycling of such layered metal structures in an ambient gas mixture composed of inert gas, such as nitrogen, containing a sufficient amount of active gas, such as, hydrogen, carbon monoxide, or the like, substantially to suppress such out-diffusion.