Abstract: A multilayer mask for patterning a platinum (or other) layer formed on a substrate. The multilayer mask includes a first dielectric layer formed on the platinum layer, a bottom resist layer formed over the first dielectric layer, a second dielectric layer formed on the bottom resist layer, and a top (structure) resist layer formed on the second dielectric layer. The second dielectric layer is patterned using the top resist layer, and serves to prevent photoresist rounding. The first dielectric layer prevents “micro-masking” by acting as an etch stop during subsequent patterning of the bottom resist layer, which is performed using dry etching techniques. The first dielectric layer is then wet etched to expose the platinum layer.