Patents by Inventor Robert Kamocsai

Robert Kamocsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing lateral germanium detectors
    Patent number: 8343792
    Abstract: An improved method for manufacturing a lateral germanium detector is disclosed. A detector window is opened through an oxide layer to expose a doped single crystalline silicon layer situated on a substrate. Next, a single crystal germanium layer is grown within the detector window, and an amorphous germanium layer is grown on the oxide layer. The amorphous germanium layer is then polished to leave only a small portion around the single crystal germanium layer. A dielectric layer is deposited on the amorphous germanium layer and the single crystal germanium layer. Using resist masks and ion implants, multiple doped regions are formed on the single crystal germanium layer. After opening several oxide windows on the dielectric layer, a refractory metal layer is deposited on the doped regions to form multiple germanide layers.
    Type: Grant
    Filed: October 27, 2008
    Date of Patent: January 1, 2013
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventors: Daniel N. Carothers, Craig M. Hill, Andrew T. S. Pomerene, Vu A. Vu, Robert Kamocsai, Timothy J. Conway
  • Method for Manufacturing Lateral Germanium Detectors
    Publication number: 20120252158
    Abstract: An improved method for manufacturing a lateral germanium detector is disclosed. A detector window is opened through an oxide layer to expose a doped single crystalline silicon layer situated on a substrate. Next, a single crystal germanium layer is grown within the detector window, and an amorphous germanium layer is grown on the oxide layer. The amorphous germanium layer is then polished to leave only a small portion around the single crystal germanium layer. A dielectric layer is deposited on the amorphous germanium layer and the single crystal germanium layer. Using resist masks and ion implants, multiple doped regions are formed on the single crystal germanium layer. After opening several oxide windows on the dielectric layer, a refractory metal layer is deposited on the doped regions to form multiple germanide layers.
    Type: Application
    Filed: October 27, 2008
    Publication date: October 4, 2012
    Inventors: Daniel N. Carothers, Craig M. Hill, Andrew T. S. Pomerene, Vu A. Vu, Robert Kamocsai, Timothy J. Conway
  • Method for fabricating electronic and photonic devices on a semiconductor substrate
    Patent number: 7811844
    Abstract: A method for fabricating photonic and electronic devices on a substrate is disclosed. Multiple slabs are initially patterned and etched on a layer of a substrate. An electronic device is fabricated on a first one of the slabs and a photonic device is fabricated on a second one of the slabs, such that the electronic device and the photonic device are formed on the same layer of the substrate.
    Type: Grant
    Filed: August 29, 2008
    Date of Patent: October 12, 2010
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventors: Daniel N. Carothers, Craig M. Hill, Andrew T. S. Pomerene, Timothy J. Conway, Rick L. Thompson, Vu A. Vu, Robert Kamocsai, Joe Giunta, Jonathan N. Ishii
  • Method for Fabricating Electronic and Photonic Devices on a Semiconductor Substrate
    Publication number: 20090111200
    Abstract: A method for fabricating photonic and electronic devices on a substrate is disclosed. Multiple slabs are initially patterned and etched on a layer of a substrate. An electronic device is fabricated on a first one of the slabs and a photonic device is fabricated on a second one of the slabs, such that the electronic device and the photonic device are formed on the same layer of the substrate.
    Type: Application
    Filed: August 29, 2008
    Publication date: April 30, 2009
    Inventors: Daniel N. Carothers, Craig M. Hill, Andrew T.S. Pomerene, Timothy J. Conway, Rick L. Thompson, Vu A. Vu, Robert Kamocsai, Joe Giunta, Jonathan N. Ishii