Patents by Inventor Robert Kaser

Robert Kaser has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High dynamic range storage gate pixel circuitry
    Patent number: 10469775
    Abstract: Image sensors may include image sensor pixels that support high dynamic range (HDR) global shutter function. An image sensor pixel may include a photodiode that is coupled to multiple storage gate nodes via respective charge transfer gates. Each of the multiple storage gate nodes may be configured to store charge corresponding to different exposure periods. The storage gate nodes may be coupled in parallel or in series with the photodiode. Charge from the different exposure times can then be merged to produce a high dynamic range image signal.
    Type: Grant
    Filed: March 31, 2017
    Date of Patent: November 5, 2019
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: John P. McCarten, Hung Q. Doan, Robert Kaser
  • HIGH DYNAMIC RANGE STORAGE GATE PIXEL CIRCUITRY
    Publication number: 20180288343
    Abstract: Image sensors may include image sensor pixels that support high dynamic range (HDR) global shutter function. An image sensor pixel may include a photodiode that is coupled to multiple storage gate nodes via respective charge transfer gates. Each of the multiple storage gate nodes may be configured to store charge corresponding to different exposure periods. The storage gate nodes may be coupled in parallel or in series with the photodiode. Charge from the different exposure times can then be merged to produce a high dynamic range image signal.
    Type: Application
    Filed: March 31, 2017
    Publication date: October 4, 2018
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: John P. McCARTEN, Hung Q. DOAN, Robert KASER
  • Elimination of glowing artifact in digital images captured by an image sensor
    Patent number: 8022452
    Abstract: A source/drain region of a transistor or amplifier is formed in a substrate layer and is connected to a voltage source. A glow blocking structure is formed at least partially around the source/drain region and is disposed between the source/drain region and an imaging array of an image sensor. A trench is formed in the substrate layer adjacent to and at least partially around the source/drain region. The glow blocking structure includes an opaque material formed in the trench and one or more layers of light absorbing material overlying the source/drain region and the opaque material.
    Type: Grant
    Filed: December 12, 2008
    Date of Patent: September 20, 2011
    Assignee: Omnivision Technologies, Inc.
    Inventors: Shen Wang, Robert P. Fabinski, Robert Kaser
  • ELIMINATION OF GLOWING ARTIFACT IN DIGITAL IMAGES CAPTURED BY AN IMAGE SENSOR
    Publication number: 20100148231
    Abstract: A source/drain region of a transistor or amplifier is formed in a substrate layer and is connected to a voltage source. A glow blocking structure is formed at least partially around the source/drain region and is disposed between the source/drain region and an imaging array of an image sensor. A trench is formed in the substrate layer adjacent to and at least partially around the source/drain region. The glow blocking structure includes an opaque material formed in the trench and one or more layers of light absorbing material overlying the source/drain region and the opaque material.
    Type: Application
    Filed: December 12, 2008
    Publication date: June 17, 2010
    Inventors: Shen Wang, Robert P. Fabinski, Robert Kaser