Abstract: A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is a copolymer of bis [3-(4-benzocyclobutenyl)] 1,n (n=2-12) alkyldiol diacrylate (such as bis [3-(4-benzocyclobutenyl)] 1,6 hexanediol diacrylate) and 1,3 bis 2 [4-benzocyclobutenyl (ethenyl)] benzene. In addition, a semiconductor structure, having a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is a copolymer of bis [3-(4-benzocyclobutenyl)] 1,n (n=2-12)alkyldiol diacrylate and 1,3 bis 2 [4-benzocyclobutenyl(ethenyl)] benzene.

Abstract: A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is a copolymer of styrene or styrene derivative (such as alpha methyl styrene) and vinylbenzocyclobutene or a vinylbenzocyclobutene derivative. In addition, a semiconductor structure, having a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is a copolymer of styrene or styrene derivative and vinylbenzocyclobutene or a vinylbenzocyclobutene derivative.

Abstract: A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene)-2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene)-2-norbornene. In addition, a semiconductor structure, having a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene)-2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene)-2-norbornene.

Abstract: An art training device. A graphics scroll presents various images suitable for tracing or copying, or blank spaces for freehand drawing, as it is wound or unwound on spindles. A transparent drawing sheet is mounted lust above the scroll for the user to practice on.

Abstract: There is provided a method of assessing oxidant stress by measuring polymerization of proteins. Also provided is a marker for oxidant stress which includes a polymerized protein. A kit for use in assessing oxidant stress, the kit including an assay for detecting polymerized proteins is also provided. A method of lowering oxidant stress by administering to a patient an effective amount of at least one reducing agent is also provided. A pharmaceutical composition for lowering oxidant stress, the pharmaceutical having an effective amount of reducing agent and a pharmaceutically acceptable carrier is also provided.