Patents by Inventor Robert KRETSCHMER

Robert KRETSCHMER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11280026
    Abstract: A semiconductor wafer made of single-crystal silicon has an oxygen concentration (new ASTM) of not less than 4.9×1017 atoms/cm3 and not more than 6.5×107 atoms/cm3 and a nitrogen concentration (new ASTM) of not less than 8×1012 atoms/cm3 and not more than 5×1013 atoms/cm3, wherein a frontside of the semiconductor wafer is covered with an epitaxial layer made of silicon, wherein the semiconductor wafer comprises BMDs of octahedral shape whose mean size is 13 to 35 nm, and whose mean density is not less than 3×108 cm?3 and not more than 4×109 cm?3, as determined by IR tomography.
    Type: Grant
    Filed: June 25, 2018
    Date of Patent: March 22, 2022
    Assignee: SILTRONIC AG
    Inventors: Timo Mueller, Andreas Sattler, Robert Kretschmer, Gudrun Kissinger, Dawid Kot
  • Publication number: 20200165745
    Abstract: A semiconductor wafer made of single-crystal silicon has an oxygen concentration (new ASTM) of not less than 4.9×1017 atoms/cm3 and not more than 6.5×107 atoms/cm3 and a nitrogen concentration (new ASTM) of not less than 8×1012 atoms/cm3 and not more than 5×1013 atoms/cm3, wherein a frontside of the semiconductor wafer is covered with an epitaxial layer made of silicon, wherein the semiconductor wafer comprises BMDs of octahedral shape whose mean size is 13 to 35 nm, and whose mean density is not less than 3×108 cm?3 and not more than 4×109 cm?3, as determined by IR tomography.
    Type: Application
    Filed: June 25, 2018
    Publication date: May 28, 2020
    Applicant: SILTRONIC AG
    Inventors: Timo MUELLER, Andreas SATTLER, Robert KRETSCHMER, Gudrun KISSINGER, Dawid KOT