Abstract: A chemical mechanical polishing composition for polishing silicon dioxide over silicon nitride includes certain acidic heterocyclic nitrogen compounds having a pK value of 5 of less. Also, methods for polishing a substrate to remove some of the silicon dioxide and silicon nitride are disclosed.

Abstract: A chemical mechanical polishing composition for polishing silicon dioxide over silicon nitride includes certain acidic heterocyclic nitrogen compounds having a pK value of 5 of less. Also, methods for polishing a substrate to remove some of the silicon dioxide and silicon nitride are disclosed.

Abstract: Polymeric reaction products of certain aromatic alcohols with certain aromatic aldehydes are useful as underlayers in semiconductor manufacturing processes.

Abstract: Polymeric reaction products of certain aromatic alcohols with certain aromatic aldehydes are useful as underlayers in semiconductor manufacturing processes.

Abstract: Polymeric reaction products of certain aromatic alcohols with certain aromatic aldehydes are useful as underlayers in semiconductor manufacturing processes.

Abstract: A composition comprising: A) polymer that comprises: L is CX—CYZ, where X, Y, and Z are independently hydrogen, an alkyl, or a substituted alkyl; and, M is an alkylene, an arylene, a substituted alkylene, a substituted arylene, or C(O)O—W—, where W is an alkylene or a substituted alkylene; and R?, R?, and R?? are independently selected from an aromatic hydrocarbon, an aliphatic hydrocarbon, or a substituted hydrocarbon that comprises one or more of O, N, S, or Si atoms, provided that at least one of R?, R?, and R?? is selected from alkoxyl, aryloxyl, hydroxyl, halide, carboxyl, or carbonate; and, p is from 1 to 10,000; and the polymer does not comprise a polyhedral oligomeric silsesquioxane structure; and B) a polymer formed from a composition comprising at least one Si-containing compound as described herein. Compositions are suitable for microelectronic applications, and have improved adhesion to photoresists polymers.

Abstract: Polymeric reaction products of certain aromatic alcohols with certain aromatic aldehydes are useful as underlayers in semiconductor manufacturing processes.

Abstract: Compositions for use in microelectronic applications: Ra comprises one or more multiple bonds, provided that, if Ra comprises more than one multiple bond, these multiple bonds are not in a conjugated configuration; and R1, R2, R3 are independently selected from alkoxyl, hydroxyl, halide, OC(O)R, OC(O)OR, wherein R is alkyl or a substituted alkyl; and Rb is selected from H or a saturated group comprising alkyl, alkylene, or alkylidene; and R4, R5, R6 are independently alkoxyl, hydroxyl, halide, OC(O)R, OC(O)OR, wherein R is alkyl or a substituted alkyl; and Rc comprises more than one multiple bond, and these multiple bonds are in a conjugated configuration; and R7, R8, R9 are independently alkoxyl, hydroxyl, halide, OC(O)R, OC(O)OR, wherein R is alkyl or a substituted alkyl; and R10, R11, R12, R13 are independently alkoxyl, hydroxyl, halide, OC(O)R, OC(O)OR, wherein R is alkyl or a substituted alkyl.

Abstract: A composition comprising: A) polymer that comprises: L is CX—CYZ, where X, Y, and Z are independently hydrogen, an alkyl, or a substituted alkyl; and, M is an alkylene, an arylene, a substituted alkylene, a substituted arylene, or C(O)O—W—, where W is an alkylene or a substituted alkylene; and R?, R?, and R?? are independently selected from an aromatic hydrocarbon, an aliphatic hydrocarbon, or a substituted hydrocarbon that comprises one or more of O, N, S, or Si atoms, provided that at least one of R?, R?, and R?? is selected from alkoxyl, aryloxyl, hydroxyl, halide, carboxyl, or carbonate; and, p is from 1 to 10,000; and the polymer does not comprise a polyhedral oligomeric silsesquioxane structure; and B) a polymer formed from a composition comprising at least one Si-containing compound as described herein. Compositions are suitable for microelectronic applications, and have improved adhesion to photoresists polymers.

Abstract: Compositions for use in microelectronic applications: Ra comprises one or more multiple bonds, provided that, if Ra comprises more than one multiple bond, these multiple bonds are not in a conjugated configuration; and R1, R2, R3 are independently selected from alkoxyl, hydroxyl, halide, OC(O)R, OC(O)OR, wherein R is alkyl or a substituted alkyl; and Rb is selected from H or a saturated group comprising alkyl, alkylene, or alkylidene; and R4, R5, R6 are independently alkoxyl, hydroxyl, halide, OC(O)R, OC(O)OR, wherein R is alkyl or a substituted alkyl; and Rc comprises more than one multiple bond, and these multiple bonds are in a conjugated configuration; and R7, R8, R9 are independently alkoxyl, hydroxyl, halide, OC(O)R, OC(O)OR, wherein R is alkyl or a substituted alkyl; and R10, R11, R12, R13 are independently alkoxyl, hydroxyl, halide, OC(O)R, OC(O)OR, wherein R is alkyl or a substituted alkyl.

Abstract: Compositions and methods useful for the removal of polymeric material from substrates, such as electronic devices are provided. These compositions and methods are particularly suitable for removing polymer residues from electronic devices following plasma etch processes.

Abstract: This invention relates to a silica, a slurry composition, and a method of their preparation. In particular, the silica of the present invention includes aggregated primary particles. The slurry composition which incorporates the silica, is suitable for polishing articles and especially useful for chemical-mechanical planarization of semiconductor substrates and other microelectronic substrates.

Abstract: This invention is directed to a slurry system and process of metal removal from a substrate. This invention is useful for polishing a microelectronic device. This invention is especially useful for chemical mechanical planarization of a semiconductor wafer. The slurry system of the present invention includes a first slurry and a second slurry, wherein the first slurry has a higher abrasive concentration than the second slurry. The process of the present invention includes a first polish with the first slurry to partially remove metal from the substrate, and a second polish with the second slurry to further remove metal from the substrate.

Abstract: This invention relates to a silica, a slurry composition, and a method of their preparation. In particular, the silica of the present invention includes aggregated primary particles. The slurry composition which incorporates the silica, is suitable for polishing articles and especially useful for chemical-mechanical planarization of semiconductor substrates and other microelectronic substrates.

Abstract: Disclosed are compositions comprised of (a)a polymer containing pendant and/or functional groups selected from the group consisting of carbamate, urethane and/or amide functional groups; and (b) a rheology modifier comprising the reaction product of an amine and an isocyanate; and, optionally, a polymer which is different from the polymer (a) which contains carbamate, urethane and/or amide functional groups. Also disclosed are curable compositions comprised of the compositions described above which further comprise (c) a curing agent having functional groups reactive with the functional groups of the polymer (a). The curable compositions are useful for a variety of applications such as adhesives, sealants and surface coatings where the presence of a carbamate, urethane and/or amide functional polymer in conjunction with the rheology modifier provides improved thixotropy and superior sag resistance.

Abstract: To encode an analog to digital signal, a comparator compares an input analog signal with a reconstructed negative feedback analog signal and provides a comparison output digital bit for each comparison. A number of output digital bits is stored in a clocked shift register. A coincidence detector is coupled to the register and provides an output pulse when all the bits in the register are the same. A proportional coincidence integrator proportionally amplifies and integrates the coincidence detector output pulses. A slope polarity switch is coupled to the output of the integrator and to the first bit in the shift register and applies a polarity sign to the integrator output according to the bit value from the register. The output of the switch is integrated to form the reconstructed negative feedback analog signal which is coupled to the comparator for comparison with the input analog signal. The digital output is taken from the shift register first bit.

Abstract: Two different frequencies are generated within an interrogation zone. The receiver portion of the system determines the presence of a predetermined marker tag within the interrogation zone by the sensing and processing of a ratio of sideband signals generated by the interaction of the two different frequencies and the predetermined marker tag. The system is greatly immuned to false alarms due to the method of processing the sensed sideband signals. Falsely generated signals are nulled and subtracted out in the receiver portion of the detection system.