Abstract: A method of stabilizing a fluorine-containing acid amplifier.

Abstract: Polymers for photoresists and monomers for incorporation into those polymers are disclosed. The polymers comprise at least two components: an acid labile component and a photolytically stable and acid-stable component. The polymers may also contain a third, photoacid generator (PAG) component. The acid-labile component is based on the presence of a readily cleavable oxygen-carbon bond that usually occurs in a sterically hindered ether or ester.

Abstract: There are disclosed sulfonic acid precursor compositions, as are methods of using these compositions in, for example, photolithography. Other embodiments are also disclosed.

Abstract: There are disclosed sulfonic acid precursor compositions, as are methods of using these compositions in, for example, photolithography.

Abstract: There are disclosed olefinic acid amplifier triggers and methods of using these compositions in, for example, photolithography.

Abstract: There are disclosed sulfonic acid precursor compositions, as are methods of using these compositions in, for example, photolithography. Other embodiments are also disclosed.

Abstract: Polymers for photoresists and monomers for incorporation into those polymers are disclosed. The polymers comprise a photoacid generator (PAG) component and at least a second component that is photolytically stable and acid-stable. The polymers may also contain a third, acid-labile component. The photoacid generator is based on N-sulfoxyimides and related moieties that contain photolabile oxygen-heteroatom and oxygen-aromatic carbon bonds.

Abstract: The present invention relates to processes for the production of sterically hindered diol ethers and diacyl ethers of formula

Abstract: Polymers for extreme ultraviolet and 193 nm photoresists are disclosed. The polymers comprise a photoacid generator (PAG) residue, an acid cleavable residue and a diacid joined by ester linkages. The polymers include a photoacid generating diol, a diacid and an acid table diol.

Abstract: Polymers for photoresists and monomers for incorporation into those polymers are disclosed. The polymers comprise at least two components: an acid labile component and a photolytically stable and acid-stable component. The polymers may also contain a third, photoacid generator (PAG) component.

Abstract: The present invention relates to processes for the production of sterically hindered diol ethers and diacyl ethers of formula

Abstract: Polymers for extreme ultraviolet and 193 nm photoresists are disclosed. The polymers comprise a photoacid generator (PAG) residue, an acid cleavable residue and a diacid joined by ester linkages. The polymers include a photoacid generating diol, a diacid and an acid table diol.

Abstract: Polymers for photoresists and monomers for incorporation into those polymers are disclosed. The polymers comprise a photoacid generator (PAG) component and at least a second component that is photolytically stable and acid-stable. The polymers may also contain a third, acid-labile component. The photoacid generator is based on N-sulfoxyimides and related moieties that contain photolabile oxygen-heteroatom and oxygen-aromatic carbon bonds.

Abstract: Compositions and methods useful for the removal of polymeric material from substrates, such as electronic devices are provided. These compositions and methods are particularly suitable for removing polymer residues from electronic devices following plasma etch processes.

Abstract: This invention relates to resins and photoresist compositions that comprise such resins. This invention includes new resins that comprise photoacid-labile deblocking groups, wherein the acid-labile moiety is substituted with one or more electron-withdrawing groups. Polymers of the invention are particularly useful as a resin binder component of chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-300 nm and sub-200 nm and preferably about 157 nm. In such short-wavelength imaging applications resins of the invention exhibit decreased absorbance of short wavelength exposure radiation, such as sub-170 nm radiation e.g. 157 nm.

Abstract: In a first aspect, polymers of the invention in general comprise a photoacid-labile unit that can generate multiple anions or acidic groups such as hydroxy (particularly phenolic) preferably from a single photoacid-induced polymer deprotection reaction. In a further aspect, polymers of the invention comprise a photoacid-labile unit that generate substantially or essentially no volatile species species during a photoacid-induced deprotection reaction of the polymer to thereby avoid undesired outgassing and/or shrinkage of a resist coating layer containing a polymer of the invention. In particularly preferred aspects of the invention, polymers are provided that combine both aspects, i.e. the polymers contain blocking groups that can generate multiple anions or acid groups preferably from a single photoacid-induced polymer deprotection reaction, and those blocking groups also generate substantially no volatile species during microlithographic processing.

Abstract: This invention relates to resins and photoresist compositions that comprise such resins. This invention includes new resins that comprise photoacid-labile deblocking groups, wherein the acid-labile moiety is substituted with one or more electron-withdrawing groups. Polymers of the invention are particularly useful as a resin binder component of chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-300 nm and sub-200 nm and preferably about 157 nm. In such short-wavelength imaging applications resins of the invention exhibit decreased absorbance of short wavelength exposure radiation, such as sub-170 nm radiation e.g. 157 nm.

Abstract: Photoresists are provided that are useful for imaging with high energy radiation sources, such as EUV, electron beam, ion beam and x-ray radiation. Resists of the invention can exhibit enhanced sensitivity and resolution upon such high energy imaging. In a first aspect, preferred resists of the invention can be characterized in part as having a high concentration of photoacid generator compound(s)relative to other resist components. In a further aspect, chemically-amplified positive-acting photoresists are provided that exhibit enhanced photoacid generation efficiency upon high energy exposures.

Abstract: A method for making an acrylic resin photoresist characterized by polymerization of an acrylic monomer in a solvent that dissolves all monomers and resultant polymers. The use of the solvent permits formation of acrylic resins suitable for use in the preparation of photoresists without recovery from its reaction mixture. Photoresists prepared from such polymers have improved transparency, especially at exposures of 193 mn or less.