Patents by Inventor Robert L. Faulconer

Robert L. Faulconer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of growing large-diameter dislocation-free <110> crystalline ingots
    Patent number: 6652824
    Abstract: A method of growing a crystalline ingot having a <110> orientation, such as a dislocation-free (“DF”) crystalline ingot, is provided. The method of manufacture includes providing a liquidous melt. Next, a seed crystal having a <110> crystal direction is contacted with the surface of the melt. The seed crystal is then withdrawn from the melt to thereby grow a neck. According to one embodiment, the seed elevation rate is automatically modified during the withdrawing step to reduce the diameter of the neck to greater than about 2.5 mm. Thereafter, the seed elevation rate is manually modified to alternate the diameter of the neck between about 2 mm and about 2.5 mm to thereby shape the neck into a recurring hourglass configuration. The neck is then withdrawn from the melt to grow a crystalline ingot having a <110> crystal direction and a diameter of at least about 200 mm.
    Type: Grant
    Filed: December 9, 2002
    Date of Patent: November 25, 2003
    Assignee: SEH America, Inc.
    Inventors: Rosemary T. Nettleton, Robert L. Faulconer, Aaron W. Johnson
  • Method of growing large-diameter dislocation-free <110> crystalline ingots
    Publication number: 20030097975
    Abstract: A method of growing a crystalline ingot having a <110> orientation, such as a dislocation-free (“DF”) crystalline ingot, is provided. The method of manufacture includes providing a liquidous melt. Next, a seed crystal having a <110> crystal direction is contacted with the surface of the melt. The seed crystal is then withdrawn from the melt to thereby grow a neck. According to one embodiment, the seed elevation rate is automatically modified during the withdrawing step to reduce the diameter of the neck to greater than about 2.5 mm. Thereafter, the seed elevation rate is manually modified to alternate the diameter of the neck between about 2 mm and about 2.5 mm to thereby shape the neck into a recurring hourglass configuration. The neck is then withdrawn from the melt to grow a crystalline ingot having a <110> crystal direction and a diameter of at least about 200 mm.
    Type: Application
    Filed: December 9, 2002
    Publication date: May 29, 2003
    Applicant: SEH America, Inc.
    Inventors: Rosemary T. Nettleton, Robert L. Faulconer, Aaron W. Johnson
  • Method of growing large-diameter dislocation-free<110> crystalline ingots
    Patent number: 6514337
    Abstract: A method of growing a crystalline ingot having a <110> orientation, such as a dislocation-free (“DF”) crystalline ingot, is provided. The method of manufacture includes providing a liquidous melt. Next, a seed crystal having a <110> crystal direction is contacted with the surface of the melt. The seed crystal is then withdrawn from the melt to thereby grow a neck. According to one embodiment, the seed elevation rate is automatically modified during the withdrawing step to reduce the diameter of the neck to greater than about 2.5 mm. Thereafter, the seed elevation rate is manually modified to alternate the diameter of the neck between about 2 mm and about 2.5 mm to thereby shape the neck into a recurring hourglass configuration. The neck is then withdrawn from the melt to grow a crystalline ingot having a <110> crystal direction and a diameter of at least about 200 mm.
    Type: Grant
    Filed: February 7, 2001
    Date of Patent: February 4, 2003
    Assignee: SEH America, Inc.
    Inventors: Rosemary T. Nettleton, Robert L. Faulconer, Aaron W. Johnson
  • Method of growing large-diameter dislocation-free<110> crystalline ingots
    Publication number: 20020104475
    Abstract: A method of growing a crystalline ingot having a <110> orientation, such as a dislocation-free (“DF”) crystalline ingot, is provided. The method of manufacture includes providing a liquidous melt. Next, a seed crystal having a <110> crystal direction is contacted with the surface of the melt. The seed crystal is then withdrawn from the melt to thereby grow a neck. According to one embodiment, the seed elevation rate is automatically modified during the withdrawing step to reduce the diameter of the neck to greater than about 2.5 mm. Thereafter, the seed elevation rate is manually modified to alternate the diameter of the neck between about 2 mm and about 2.5 mm to thereby shape the neck into a recurring hourglass configuration. The neck is then withdrawn from the melt to grow a crystalline ingot having a <110> crystal direction and a diameter of at least about 200 mm.
    Type: Application
    Filed: February 7, 2001
    Publication date: August 8, 2002
    Applicant: SEH America, Inc.
    Inventors: Rosemary T. Nettleton, Robert L. Faulconer, Aaron W. Johnson