Abstract: Group II-VI compound semiconductor light emitting devices which include at least one II-VI quantum well region of a well layer disposed between first and second barrier layers is disclosed. The quantum well region is sandwiched between first and second cladding layers of a II-VI semiconductor material. The first cladding layer is formed on and lattice matched to the first barrier layer and to a substrate of a III-V compound semiconductor material. The second cladding layer is lattice matched to the second barrier layer. The quantum well layer comprises a II-VI compound semiconductor material having the formula A.sub.x B.sub.(1-x) C wherein A and B are two different elements from Group II and C is at least one element from Group VI. When the second cladding layer has a p-type conductivity, a graded bandgap ohmic contact according to the present invention can be utilized.

Abstract: Group II-VI compound semiconductor light emitting devices which include at least one II-VI quantum well region of a well layer disposed between first and second barrier layers is disclosed. The quantum well region is sandwiched between first and second cladding layers of a II-VI semiconductor material. The first cladding layer is formed on and lattice matched to the first barrier layer and to a substrate of a III-V compound semiconductor material. The second cladding layer is lattice matched to the second barrier layer. The quantum well layer comprises a II-VI compound semiconductor material having the formula A.sub.x B.sub.(1-x) C wherein A and B are two different elements from Group II and C is at least one element from Group VI. When the second cladding layer has a p-type conductivity, a graded bandgap ohmic contact according to the present invention can be utilized.

Abstract: A separate comb transducer is disclosed in a ZnO/Si SAW device to enable doubling of the possible operating frequency for a given photolithographic capability of the device. Frequency doubling is made possible by a single-phase structure having conductive and non-conductive surfaces equal to one-half of the SAW wavelength. By connection of two such structures in parallel, a balanced separate comb transducer is achieved for reducing signal levels due to direct coupling that otherwise occurs in the single-phase structure. Separate comb grating transducers are also disclosed to enable fabrication of higher frequency MZOS convolvers, with both the separate comb transducer and separate comb grating transducer being shown utilized in both the Rayleigh and Sezawa modes.

Abstract: A microwave oven using a waveguide feed to deliver microwave energy from a magnetron source to an oven cavity, wherein a substantially reflectionless phase shifter is interposed in the waveguide for adjusting the electrical characteristics thereof to cause the magnetron to operate efficiently and safely. The phase shifter is dimensioned to match the impedance of the oven cavity and load to that required by the magnetron by adjusting the electrical characteristics of the waveguide so that such adjustment may be carried out without the need for changing the physical configuration of the oven or waveguide. The phase shifter is dimensioned to adjust the average impedance of the cavity and load when the cavity is heavily loaded to cause the magnetron to operate in its maximum power delivery region, and to adjust the aforementioned impedance under conditions of light load to cause the magnetron to operate in a safe region.