Abstract: An improved method of MOS circuit fabrication includes the consecutive steps of formation of a selected material on the surface of an underlying substrate, removal of the selected material from selected portions of the underlying substrate, and formation of insulating material between the selected material and the underlying substrate on the surface of the newly exposed underlying substrate.

Abstract: A metal-oxide-semiconductor (MOS) transistor structure includes gate, source and drain regions. Said structure also includes a gate electrode electrically connected and contiguous to either the source region or the drain region. Typically, the gate electrode is formed of a conductive material through which impurity diffusions may pass substantially unimpeded.

Abstract: An MOS transistor is constructed such that the insulation covering the field of the device and in direct contact with the top surface of the semiconductor material in which the source and drain regions are formed, tapers gradually in thickness to that of the insulation under the gate electrode thereby to prevent abrupt step-heights in the transition region between the field insulation and the gate insulation.

Abstract: A structure which achieves a sloped topography where a layer of polycrystalline silicon contacts a single crystal silicon substrate and a process for fabricating the structure are disclosed. The structure comprises a sloped tip of a single crystal silicon material located at the end of the polycrystalline silicon layer and making contact with the single crystal silicon substrate. The process involves defining the polycrystalline silicon layer by applying an orientation-selective etch which etches unwanted polycrystalline silicon preferentially to single crystal silicon so that the sloped tip remains essentially intact to achieve said sloped topography contact area.