Abstract: A measurement technique based on a microwave near-field scanning probe is developed for non-contact measurement of dielectric constant of low-k films. The technique is non-destructive, non-invasive and can be used on both porous and non-porous dielectrics. The technique is based on measurement of resonant frequency shift of the near-field microwave resonator for a plurality of calibration samples vs. distance between the probe tip and the sample to construct a calibration curve. Probe resonance frequency shift measured for the sample under study vs. tip-sample separation is fitted into the calibration curve to extract the dielectric constant of the sample under study. The calibration permits obtaining a linear calibration curve in order to simplify the extraction of the dielectric constant of the sample under study.

Abstract: A probe for non-destructive determination of complex permittivity of a material and for near field optical microscopy is based on a balanced multi-conductor transmission line structure created on a dielectric substrate member which confines the probing field within a sharply defined sampling volume in the material under study. A method for manufacturing dielectric support member based probes includes anisotropically depositing a 50-100 ? thick underlayer of Cr, Ni, W or Ta onto the dielectric support member, anisotropically depositing conductive material onto the Cr, Ni, W or Ta underlayer, and removing the unwanted conductive material at the sides of the dielectric support member to electrically isolate the created conductive strips.

Abstract: A method for measuring a material's complex permittivity is provided where a near-field microwave probe is positioned a predetermined distance from a first and a second standard sample for measuring a relative resonant frequency shift of the near-field microwave probe for standard samples. Based on measurements, calibration coefficients are calculated. A relative resonant frequency shift of the near-field microwave probe for a sample under study is measured by fast frequency sweep technique while the distance between the tip of the probe and the sample under the study is maintained nominally at the distance between the tip of the probe and each standard sample during a calibration procedure by a shear-force based distance control mechanism. Also, the change in the quality factor of the probe for unloaded and loaded resonator is measured.

Abstract: A probe for non-destructive determination of complex permittivity of a material and for near field optical microscopy is based on a balanced multi-conductor transmission line structure created on a dielectric substrate member which confines the probing field within a sharply defined sampling volume in the material under study.

Abstract: A method for measuring a material's complex permittivity is provided where a near-field microwave probe is positioned a predetermined distance from a first and a second standard sample for measuring a relative resonant frequency shift of the near-field microwave probe for standard samples. Based on measurements, calibration coefficients are calculated. A relative resonant frequency shift of the near-field microwave probe for a sample under study is measured by fast frequency sweep technique while the distance between the tip of the probe and the sample under the study is maintained nominally at the distance between the tip of the probe and each standard sample during a calibration procedure by a shear-force based distance control mechanism. Also, the change in the quality factor of the probe for unloaded and loaded resonator is measured.

Abstract: A probe for non-destructive determination of complex permittivity of a material and for near field optical microscopy is based on a balanced multi-conductor transmission line structure created on a dielectric substrate member which confines the probing field within a sharply defined sampling volume in the material under study. A method for manufacturing dielectric support member based probes includes anisotropically depositing a 50-100 Å thick underlayer of Cr, Ni, W or Ta onto the dielectric support member, anisotropically depositing conductive material onto the Cr, Ni, W or Ta underlayer, and removing the unwanted conductive material at the sides of the dielectric support member to electrically isolate the created conductive strips.

Abstract: A probe for non-destructive determination of complex permittivity of a material and for near field optical microscopy is based on a balanced multi-conductor transmission line structure created on a dielectric substrate member which confines the probing field within a sharply defined sampling volume in the material under study. A method for manufacturing dielectric support member based probes includes anisotropically depositing a 50-100 Å thick underlayer of Cr, Ni, W or Ta onto the dielectric support member, anisotropically depositing conductive material onto the Cr, Ni, W or Ta underlayer, and removing the unwanted conductive material at the sides of the dielectric support member to electrically isolate the created conductive strips.