Abstract: Disclosed is a computerized data display system including a computer operating in accord with a window display management system for the display and control of a plurality of data windows on a display screen of a display device. The data windows are displayed on the display screen in a spatial relation corresponding to the field of view seen from a preselected viewing location selected by means of a control signal provided as an input to the computer. A head coupled image display device, coupled to the display screen of the display device, is adapted to display the data windows appearing on the display screen of the display device separately to each eye of a user to create a binocular, stereoscopic virtual screen image to the user that has a virtual screen size independent of the size of the display screen of the display device.

Abstract: A security system and method for IC circuits has at least one additional circuit element that does not contribute toward the IC's circuit function, but inhibits proper functioning of the IC in case of an attempted copying or other unauthorized use. The identity of the additional circuit elements is disguised by forming them with the visible appearance of an apparent element but with a physical modification which is not readily visible but causes them to function in a different manner, by providing different ICs with unique control codes, or both. Physical modifications not readily visible to a copyist include very narrow open circuit cuts in metallized connection lines, preferably with a focused ion beam (FIB) or laser beam; and/or disordering the lattice structure or changing the doping level of a semiconductor region, preferably with a FIB; and/or injecting electrical charge into a semiconductor region, preferably with an electron beam.

Abstract: An ion beam microfabrication system is described which is capable of operating in either a flooded beam mode, in which a relatively high current beam is used to yield a rapid throughput, or in a low current, high resolution focused ion beam mode. With a focused beam a small, relatively low current ion spot is deflected in a predetermined pattern over a portion of the wafer to produce more detailed patterning that is not achievable in the flooded beam mode. A lens is added to the beam column to modify the beam collimation between the focused and flooded modes, and switching between modes is accomplished by simply actuating or de-actuating the lens. The beam is formed with a larger acceptance angle and total current in the flooded than the focused mode.

Abstract: Focused ion beam microfabrication column (10) produces an ion beam from ion source (12), focuses the beam by objective lens (24) onto the plane of electrode (36). ExB filter (44) separates out the ion species at a low energy portion of the beam. The beam of selected species is first accelerated by energy central lens (38) which has a controllable potential for controlling the final beam energy to the target. The beam is accelerated by final accelerator lens (54) and is demagnified and focused on the target by that lens. Beam deflector (64) deflects the beam for programmed ion beam work on the target (60).

Abstract: Two lens focused ion beam column (10) has an accelerating lens (20) which carries a potential to focus an image of the liquid metal ion source (14) on the mass analyzer slit (26) with a magnification of about unity. Munro lens (36) accelerates the beam of selected ion species and demagnifies the image through a long working distance to provide an ion writing spot of less than about 1000 .ANG. size.

Abstract: The specification discloses a process for accurately aligning a chosen member with a focused beam of radiation or for aligning two chosen members with each other. A set of alignment marks having a predetermined spatial pattern is first provided on the surface of each member. Next, a detection signal is generated from the set of alignment marks, comprising a serial electronic signal as a function of time and containing serial information corresponding to the relative position of each mark in the set of alignment marks. Then, the detection signal is electronically processed to generate an alignment signal with a high signal-to-noise ratio. Next, the alignment signal is compared to a reference signal signifying a predetermined criterion of alignment, to generate an error signal which is indicative of the extent of misalignment.

Abstract: Thermionic cathode 12 for a plasma ion source 10 has tungsten wire 64 advanced by wheels 56 from supply 50 to take-up spool 58. In chamber 48, the active cathode region 64 acts with anode 16 to supply electrons for ionizing a fuel gas so the ions are discharged from slit 18 for acceleration, separation and implantation.

Abstract: The specification describes a process for masking a collimated ion beam for either forming resist patterns on selected substrates or for other selective ion implantation purposes. This process includes the steps of forming an ion absorption mask on the surface of a hyper thin supporting membrane and thereafter aligning the mask with a substrate having a layer of resist thereon. Next, the ion absorption mask is exposed to a beam of ions which pass through certain areas of the absorption mask and into the resist layer to thereby expose selected regions in the resist layer (i.e., to increase or decrease the solubility of the resist to a chosen developer). In a specific embodiment of the invention, the ion absorption mask is formed by initially anodizing an aluminum substrate to form a thin coating of aluminum oxide thereon, and thereafter depositing a gold mask on one surface of the aluminum oxide coating.

Abstract: Alloys suitable for use in liquid metal field ionization ion sources are provided. Such sources include an anode electrode for supporting an ion emitter comprising an alloy in the liquid state. The source further comprises means for generating an ionizing electric field and a reservoir for the liquid metal, ions of which are to be emitted by the source.The alloys are selected from the group consisting of (a) metal-metalloid alloys comprising about 10 to 30 atom percent of at least one metalloid element, the balance at least one transition metal element, (b) early transition-late transition alloys comprising about 30 to 85 atom percent of at least one early transition metal, the balance at least one late transition metal, and (c) Group II alloys comprising about 35 to 80 atom percent of at least one Group II element, the balance at least one metal element.Ions generated in liquid metal ion sources form a high brightness ion beam, which permits focusing a beam of emitted ions to a submicrometer spot.

Abstract: A plurality of beam generating units 76, 78, 80 and 82 each produces separated rectangular ion beams for implantation onto a targets 52 and 54 rotatively moving therepast. Each rectangular footprint is long in the direction of motion and is scanned transversely to the direction of motion. A plurality of beam generating units can be positioned adjacent to each other to multiply implant targets because of the compact structure of the separated ion source.

Abstract: The specification discloses a process for accurately aligning a chosen member with a focused beam of radiation or for aligning two chosen members with each other. A set of alignment marks having a predetermined spatial pattern is first provided on the surface of each member. Next, a detection signal is generated from the set of alignment marks, comprising a serial electronic signal as a function of time and containing serial information corresponding to the relative position of each mark in the set of alignment marks. Then, the detection signal is electronically processed to generate an alignment signal with a high signal-to-noise ratio. Next, the alignment signal is compared to a reference signal signifying a predetermined criterion of alignment, to generate an error signal which is indicative of the extent of misalignment.

Abstract: A high-resolution high-throughput ion beam lithography process and apparatus for exposing a large area target by a step-and-repeat process which accommodates lateral wafer distortions in the target and optimizes the resolution, throughput, yield, and cost of the process. First there is provided: a target having predetermined segments defined thereon, with the area of each segment being chosen to optimize the resolution, throughput, yield, and cost of the process; a mask placed in proximity to said target, to define the patterned ion beam; a collimated ion beam with a diameter approximately equal to the diameter of the mask, which is projected through the mask to form the patterned ion beam; and a means for aligning the mask and a selected segment of the target. The size of the mask is equal to or larger than the size of one of the predetermined segments of the target and the pattern area of the mask is smaller than the area of one of the selected segments of the target.

Abstract: The first plasma discharge chamber of the dual discharge plasma device contains an electron emitter and a first anode and contains gas at a sufficiently high pressure that the discharge voltage in the first chamber is below the sputtering threshold. The second chamber has a main anode and receives a plume of plasma from the first chamber. The main anode operates at a voltage above the sputtering threshold with a respect to the first anode and the gas in the second chamber is at a low enough pressure for a conventional low pressure plasma discharge which is used as an ion source.

Abstract: The ion implantation system includes a separate vacuum housing 102 for the ion source and the target chamber 118. The ribbon beam ion source 10 provides a footprint 162 on the wafer wheel 126 of such shape as to permit short traverse of the wafer wheel 126 for full wafer scan.

Abstract: The separated ion source combines an ion source and a magnetic mass separator within a single magnetic field geometry. The preferred ion source has a low voltage Penning discharge configuration and produces a charged particle beam in the form of a ribbon with a rectangular cross section.

Abstract: The specification describes a process for minimizing ion scattering and thereby improving resolution in ion beam lithography. First, a substrate coated with a layer of ion beam resist is provided at a chosen spaced distance from an ion beam source. Next, a monocrystalline membrane with a patterned ion absorption region is positioned at a predetermined location between the substrate target and the ion beam source. The patterned ion absorption region may be either an ion absorption mask, such as gold, deposited on the surface of the monocrystalline membrane, or a pattern of ion-damaged regions within the monocrystalline membrane. Finally, a collimated wide area ion beam is passed perpendicular to the surface of the membrane and through crystal lattice channels therein which are exposed by the patterned ion absorption region and which extend perpendicular to the membrane surface.

Abstract: A high current ion beam is extracted from an ion plasma by a low perveance ion optical system including a screen electrode, a final electrode and an intermediate electrode therebetween which is shaped to correspond to the extraction voltage equipotentials therebetween. By controlling the voltage of the intermediate electrode with respect to the other two electrodes focusing is accomplished.

Abstract: The linearity of a field-effect transistor's logarithmic transconductance extended over an increased range by having its channel non-uniformly doped in a direction along the width of the gate electrode and perpendicular to that of current flow.

Abstract: Disclosed is a process for forming resist patterns on selected substrates and includes the steps of forming an ion absorption mask on the surface of a thin supporting membrane and thereafter aligning the mask with a substrate having a layer of resist thereon. Next, the ion absorption mask is exposed to a beam of ions which pass through certain areas of the absorption mask and into the resist layer to thereby expose selected regions in the resist layer (i.e., to increase or decrease the solubility of the resist to a chosen developer). In a specific embodiment of the invention, the ion absorption mask is formed by initially anodizing an aluminum substrate to form a thin coating of aluminum oxide thereon, and thereafter depositing a gold mask on one surface of the aluminum oxide coating.

Abstract: A well-formed ion beam having a high current is extracted from an ion plasma by a low perveance ion extraction system including focus and extraction electrodes, the extraction electrode having an ion exit aperture and being axially spaced from the focus electrode a distance of at least several times the diameter of the ion exit aperture. A voltage differential is applied between the electrodes to define a plasma sheath at the ion source aperture, and the ion beam is extracted from the plasma sheath.