Patents by Inventor Robert Laibowitz

Robert Laibowitz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming a (111) oriented BSTO thin film layer for high dielectric constant capacitors
    Publication number: 20050196917
    Abstract: A method for forming high capacitance crystalline dielectric layers with (111) texture is disclosed. In an exemplary embodiment, deposition of a plurality of nuclei is performed at a temperature in the range of about 430 to 460 degrees Celsius, followed by growth of a continuous BSTO dielectric layer at a temperature greater than 600 degrees Celsius. In an exemplary embodiment, a process is disclosed for growing a barium strontium titanium oxide film with high capacitance and thickness of about 30 nm or less.
    Type: Application
    Filed: March 3, 2004
    Publication date: September 8, 2005
    Inventors: Jingyu Lian, David Kotecki, Hua Shen, Robert Laibowitz, Katherine Saenger, Chenting Lin, Nicolas Nagel, Yunyu Wang, Satish Athavale, Thomas Shaw
  • Dielectrics with improved leakage characteristics
    Publication number: 20050118836
    Abstract: Methods for forming an oxynitride dielectric in a semiconductor device are disclosed. In the method, an oxynitride layer is grown on a semiconductor device. The oxynitride layer is then annealed at a temperature of about 400° C. for about 20 minutes. Further, the annealing may be performed in a nitrogen ambient or a nitrogen ambient including an oxygen concentration of less than about 1 to about 10 parts per billion.
    Type: Application
    Filed: December 2, 2003
    Publication date: June 2, 2005
    Inventors: Anthony Chou, Robert Laibowitz
  • High dielectric constant material deposition to achieve high capacitance
    Patent number: 6207584
    Abstract: A method for forming a dielectric layer includes exposing a surface to a first dielectric material in gaseous form at a first temperature. Nuclei of the first dielectric material are formed on the surface. A layer of a second dielectric material is deposited on the surface by employing the nuclei as seeds for layer growth wherein the depositing is performed at a second temperature which is greater than the first temperature.
    Type: Grant
    Filed: January 5, 2000
    Date of Patent: March 27, 2001
    Assignees: International Business Machines Corp., Infineon Technologies North America Corp.
    Inventors: Hua Shen, David E. Kotecki, Robert Laibowitz, Katherine Lynn Saenger, Satish D. Athavale, Jenny Lian, Martin Gutsche, Yun-Yu Wang, Thomas Shaw