Abstract: An imager, including: a semiconductor substrate; a plurality of spaced image pixels formed in the substrate; and a dielectric layer formed over the image pixels, the dielectric layer having a top surface. The imager further includes a plurality of depressions formed in the top surface; and a plurality of lenses having top surfaces, each lens formed in the depression corresponding to an underlying image pixel, the top surface of each lens being optically planar with the top surface of the dielectric.

Abstract: An image sensor and method of making such sensor is described. The sensor includes an integral color filter array, comprising: a semiconductor substrate having an optically planar top surface; a plurality of spaced image pixels formed in the substrate; and an array of physically contiguous color filter elements embedded in the substrate whose top and bottom surfaces are coplanar and which have no overlap of color filter layers between adjacent color filter elements.

Abstract: A method of making an imager including the steps of providing a semiconductor substrate; forming a plurality of spaced image pixels in the substrate; depositing a dielectric layer over the image pixels and making this layer optically planar by chemical mechanical polishing, thereby forming an optically flat surface. The method further includes forming a plurality of depressions in the optically flat surface; uniformly depositing a lens material on the optically flat surface, entirely filling the depressions; and forming the lens material.

Abstract: An image sensor which includes an integral color filter array and a method of making such sensor is disclosed. The sensor includes a semiconductor substrate having an overlying support layer with an optically planar surface, a plurality of spaced image pixels formed in the substrate; and an array of contiguous color filter elements overlying the planar surface whose top surfaces are coplanar and which have no overlap of color filter material between adjacent color filter elements.

Abstract: A method of making a fully self-aligned, planar, two phase charge coupled device comprises the steps of first forming upon a semiconductive substrate a uniform dielectric; then implanting ions of a second conductivity type into the substrate, then patterning closely spaced first conductive strips of a first conductive layer on the dielectric, then further implanting ions of the first or second conductivity type in the regions between said first conductive strips, then depositing uniformly a second conductive layer electrically isolated from the first conductive strips by an insulative region, then entirely removing by uniform planarization those portions of the second conductive layer disposed over regions of the first conductive strips so as to form coplanar, alternating first and thick electrically isolated conductive strips, then depositing a second insulative layer, then electrically connecting selected adjacent first and second conductive strips together to form first and second composite gate electrodes

Abstract: An image sensor which includes an integral color filter array and a method of making such sensor is disclosed. The sensor includes a semiconductor substrate having an overlying support layer with an optically planar surface, a plurality of spaced image pixels formed in the substrate; and an array of contiguous color filter elements overlying the planar surface whose top surfaces are coplanar and which have no overlap of color filter material between adjacent color filter elements.

Abstract: An image sensor and method of making such sensor is described. The sensor includes an integral color filter array, comprising: a semiconductor substrate having an optically planar top surface; a plurality of spaced image pixels formed in the substrate; and an array of physically contiguous color filter elements embedded in the substrate whose top and bottom surfaces are coplanar and which have no overlap of color filter layers between adjacent color filter elements.