Abstract: An optical communication device may include a driver component, arranged to achieve a driving voltage, and a modulator component, including a laser or arranged to receive light from a laser. The modulator component may be arranged to achieve a modulated light signal modulated based on the driving voltage. The device may include a transmission line arranged to transfer the driving voltage between the driver component and the modulator component. The transmission line may not impedance matched to the driver component, the transmission line may have an impedance which is at least 20% lower than an output impedance of the driver component, and the transmission line may be impedance matched with respect to signal reflections to the modulator component.

Abstract: This disclosure describes an integrated compound semiconductor co-packaged optics (CCPO) device. The CCPO device has a photonic integrated circuit (PIC) and an electronic integrated circuit (EIC) mounted on a common package substrate. The PIC has a modulator array and a photodetector (PD) array fabricated in GaAs and/or InP. In some configurations the PIC also has an amplifier array fabricated in GaAs and/or InP. The CCPO design reduces loss and signal integrity issues that are typically present when the PIC and EIC are on separate substrates.

Abstract: An electro-absorption modulator (EAM) is configured to include an on-chip AC ground plane that is used to terminate the high frequency RF input signal within the chip itself. This on-chip ground termination of the modulation input signal improves the frequency response of the EAM, which is an important feature when the EAM needs to support data rates in excess of 50 Gbd. By virtue of using an on-chip ground for the very high frequency signal content, it is possible to use less expensive off-chip components to address the lower frequency range of the data signal (i.e., for frequencies less than about 1 GHz).

Abstract: An electro-absorption modulator (EAM) is configured to include an on-chip AC ground plane that is used to terminate the high frequency RF input signal within the chip itself. This on-chip ground termination of the modulation input signal improves the frequency response of the EAM, which is an important feature when the EAM needs to support data rates in excess of 50 Gbd. By virtue of using an on-chip ground for the very high frequency signal content, it is possible to use less expensive off-chip components to address the lower frequency range of the data signal (i.e., for frequencies less than about 1 GHz).

Abstract: An electro-absorption modulator (EAM) is configured to include an on-chip AC ground plane that is used to terminate the high frequency RF input signal within the chip itself. This on-chip ground termination of the modulation input signal improves the frequency response of the EAM, which is an important feature when the EAM needs to support data rates in excess of 50 Gbd. By virtue of using an on-chip ground for the very high frequency signal content, it is possible to use less expensive off-chip components to address the lower frequency range of the data signal (i.e., for frequencies less than about 1 GHz).

Abstract: An optical communication device may include a driver component, arranged to achieve a driving voltage, and a modulator component, including a laser or arranged to receive light from a laser. The modulator component may be arranged to achieve a modulated light signal modulated based on the driving voltage. The device may include a transmission line arranged to transfer the driving voltage between the driver component and the modulator component. The transmission line may not impedance matched to the driver component, the transmission line may have an impedance which is at least 20% lower than an output impedance of the driver component, and the transmission line may be impedance matched with respect to signal reflections to the modulator component.

Abstract: An electro-absorption modulator (EAM) is configured to include an on-chip AC ground plane that is used to terminate the high frequency RF input signal within the chip itself. This on-chip ground termination of the modulation input signal improves the frequency response of the EAM, which is an important feature when the EAM needs to support data rates in excess of 50 Gbd. By virtue of using an on-chip ground for the very high frequency signal content, it is possible to use less expensive off-chip components to address the lower frequency range of the data signal (i.e., for frequencies less than about 1 GHz).

Abstract: An electro-optical modulator includes a substrate comprising a first Mach-Zehnder modulator comprising a first waveguide and a second waveguide and a second Mach-Zehnder modulator comprising a first waveguide and a second waveguide. A first positive signal electrode is positioned on the substrate over the first waveguide of the first Mach-Zehnder modulator and a first negative signal electrode is positioned on the substrate over the second waveguide of the first Mach-Zehnder modulator. The first positive signal electrode and the first negative signal electrode are connected to a first differential signal input. A second positive signal electrode is positioned on the substrate over the first waveguide of the second Mach-Zehnder modulator and a second negative signal electrode positioned on the substrate over the second waveguide of the second Mach-Zehnder modulator. The second positive signal electrode and the second negative signal electrode are connected to a second differential signal input.

Abstract: The present invention relates to an optical modulator, divided into at least two active segments separated by at least one passive segment. The modulator comprises: an optical waveguide with an optical group index no having an optical signal propagating at an optical velocity vo, and a microwave transmission line with an electrical propagation index np, having an electrical signal propagating at an electrical velocity Ve. The electrical propagation index np of the unloaded microwave transmission line is lower than the optical group index no of the optical waveguide. The loading and length of the microwave transmission line are adjusted for a specific Bloch impedance and electrical velocity ve. The invention also relates to a method for adapting the impedance of an optical modulator.