Patents by Inventor Robert Luke Wisnieff
Robert Luke Wisnieff has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8426316Abstract: Disclosed are a method and a system for processing a semiconductor structure of the type including a substrate, a dielectric layer, and a TaN—Ta liner on the dielectric layer. The method comprises the step of using XeF2 to remove at least a portion of the TaN—Ta liner completely to the dielectric layer. In the preferred embodiments, the present invention uses XeF2 selective gas phase etching as alternatives to Ta—TaN Chemical Mechanical Polishing (CMP) as a basic “liner removal process” and as a “selective cap plating base removal process.” In this first use, XeF2 is used to remove the metal liner, TaN—Ta, after copper CMP. In the second use, the XeF2 etch is used to selectively remove a plating base (TaN—Ta) that was used to form a metal cap layer over the copper conductor.Type: GrantFiled: September 4, 2008Date of Patent: April 23, 2013Assignee: International Business Machines CorporationInventors: John Michael Cotte, Nils Deneke Hoivik, Christopher Vincent Jahnes, Robert Luke Wisnieff
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Publication number: 20090001587Abstract: Disclosed are a method and a system for processing a semiconductor structure of the type including a substrate, a dielectric layer, and a TaN—Ta liner on the dielectric layer. The method comprises the step of using XeF2 to remove at least a portion of the TaN—Ta liner completely to the dielectric layer. In the preferred embodiments, the present invention uses XeF2 selective gas phase etching as alternatives to Ta—TaN Chemical Mechanical Polishing (CMP) as a basic “liner removal process” and as a “selective cap plating base removal process.” In this first use, XeF2 is used to remove the metal liner, TaN—Ta, after copper CMP. In the second use, the XeF2 etch is used to selectively remove a plating base (TaN—Ta) that was used to form a metal cap layer over the copper conductor.Type: ApplicationFiled: September 4, 2008Publication date: January 1, 2009Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: John Michael Cotte, Nils Deneke Hoivik, Christopher Vincent Jahnes, Robert Luke Wisnieff
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Patent number: 7422983Abstract: Disclosed are a method and a system for processing a semiconductor structure of the type including a substrate, a dielectric layer, and a TaN—Ta liner on the dielectric layer. The method comprises the step of using XeF2 to remove at least a portion of the TaN—Ta liner completely to the dielectric layer. In the preferred embodiments, the present invention uses XeF2 selective gas phase etching as alternatives to Ta—TaN Chemical Mechanical Polishing (CMP) as a basic “liner removal process” and as a “selective cap plating base removal process.” In this first use, XeF2 is used to remove the metal liner, TaN—Ta, after copper CMP. In the second use, the XeF2 etch is used to selectively remove a plating base (TaN—Ta) that was used to form a metal cap layer over the copper conductor.Type: GrantFiled: February 24, 2005Date of Patent: September 9, 2008Assignee: International Business Machines CorporationInventors: John Michael Cotte, Nils Deneke Hoivik, Christopher Vincent Jahnes, Robert Luke Wisnieff
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Patent number: 7001498Abstract: An electroplating apparatus, in accordance with the present invention, includes a plurality of chambers. A first chamber includes an anode therein. The first chamber has an opening for delivering an electrolytic solution containing metal ions onto a surface to be electroplated. The surface to be electroplated is preferably a cathode. A second chamber is formed adjacent to the first chamber and has a second opening in proximity of the first opening for removing electrolytic solution containing metal ions from the surface to be electroplated. The plurality of chambers are adapted for movement in a first direction along the surface to be electroplated.Type: GrantFiled: October 10, 2002Date of Patent: February 21, 2006Assignee: International Business Machines CorporationInventors: Evan George Colgan, John Christopher Flake, Lubomyr Taras Romankiw, Robert Luke Wisnieff
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Patent number: 6774482Abstract: In an integrated circuit structure, such as in an MCM or in an SCM, a particulate thermally conductive conformable material, such as a thermal paste, is applied between a heat-generating chip and a cooling plate. Modification of the microstructure of at least one of the two nominally parallel surfaces which are in contact with the material is provided in a discrete pattern of sloped recesses. The largest particles in the material preferentially migrate downward into the recesses. The average thickness of the conductive paste is reduced to below the diameter of the largest particles dispersed in the material, providing improved cooling.Type: GrantFiled: December 27, 2002Date of Patent: August 10, 2004Assignee: International Business Machines CorporationInventors: Evan George Colgan, John Harold Magerlein, Robert Luke Wisnieff, Jeffrey Allen Zitz
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Publication number: 20040124525Abstract: In an integrated circuit structure, such as in an MCM or in an SCM, a particulate thermally conductive conformable material, such as a thermal paste, is applied between a heat-generating chip and a cooling plate. Modification of the microstructure of at least one of the two nominally parallel surfaces which are in contact with the material is provided in a discrete pattern of sloped recesses. The largest particles in the material preferentially migrate downward into the recesses. The average thickness of the conductive paste is reduced to below the diameter of the largest particles dispersed in the material, providing improved cooling.Type: ApplicationFiled: December 27, 2002Publication date: July 1, 2004Applicant: IBMInventors: Evan George Colgan, John Harold Magerlein, Robert Luke Wisnieff, Jeffrey Allen Zitz
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Publication number: 20030038037Abstract: An electroplating apparatus, in accordance with the present invention, includes a plurality of chambers. A first chamber includes an anode therein. The first chamber has an opening for delivering an electrolytic solution containing metal ions onto a surface to be electroplated. The surface to be electroplated is preferably a cathode. A second chamber is formed adjacent to the first chamber and has a second opening in proximity of the first opening for removing electrolytic solution containing metal ions from the surface to be electroplated. The plurality of chambers are adapted for movement in a first direction along the surface to be electroplated.Type: ApplicationFiled: October 10, 2002Publication date: February 27, 2003Applicant: International Business Machines CorporationInventors: Evan George Colgan, John Christopher Flake, Lubomyr Taras Romankiw, Robert Luke Wisnieff
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Patent number: 6495005Abstract: An electroplating apparatus, in accordance with the present invention, includes a plurality of chambers. A first chamber includes an anode therein. The first chamber has an opening for delivering an electrolytic solution containing metal ions onto a surface to be electroplated. The surface to be electroplated is preferably a cathode. A second chamber is formed adjacent to the first chamber and has a second opening in proximity of the first opening for removing electrolytic solution containing metal ions from the surface to be electroplated. The plurality of chambers are adapted for movement in a first direction along the surface to be electroplated.Type: GrantFiled: May 1, 2000Date of Patent: December 17, 2002Assignee: International Business Machines CorporationInventors: Evan George Colgan, John Christopher Flake, Lubomyr Taras Romankiw, Robert Luke Wisnieff
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Patent number: 5831698Abstract: A display having an electrically variable diffuser is disclosed. In response to an electric field, the electrically variable diffuser is electrically switched from a low illumination/narrow viewing angle mode to a high illumination/wide viewing angle mode. The viewing angle is correlated with backlight luminance to provide an adequate display as the viewing angle is varied. This allows a user to choose between preserving battery life and maximizing viewing angle.Type: GrantFiled: August 20, 1996Date of Patent: November 3, 1998Assignee: International Business Machines CorporationInventors: Steven W. Depp, Anthony Cyril Lowe, Robert Luke Wisnieff