Abstract: A method and device for detecting whether a headset is on ear. A probe signal is generated for acoustic playback from a speaker. A microphone signal from a microphone is received, the microphone signal comprising at least a portion of the probe signal as received at the microphone. The microphone signal is passed to a state estimator, to produce an estimate of at least one parameter of the portion of the probe signal contained in the microphone signal. The estimate of the at least one parameter is processed to determine whether the headset is on ear.

Abstract: Detection of a blocked microphone involves receiving microphone signals from a plurality of microphones. A plurality of signal feature measures are derived from the microphone signals. The signal feature measures are normalised. The normalised signal feature measures are variably weighted in response to detected environmental conditions in the microphone signals. The variably weighted normalised signal feature measures are combined to produce an output indication of whether a microphone is blocked.

Abstract: The present concrete crack repair device (CCRD) can be comprised of two nodules connected by an elongated strip wherein the elongated strip can be narrower than the nodules in at least one plane. Both the elongated strip and the nodules can comprise carbon fibers wherein most of the carbon fibers are located within the same plane maximizing the tensile strength of the device. Installation of the CCRD can be performed by drilling holes into the surface of the concrete on either side of the crack and cutting a slot in the surface of the concrete between the two holes, or adding the holes after the slot has been cut, wherein the slot and holes are located in a line that is roughly perpendicular to the crack. The CCRD can then be installed by placing each nodule in a hole and the elongated strip within the slot.

Abstract: A basement drainage system and method for its use comprising a combination of floor drains, poly drains and an exterior drainage system, wherein the exterior drainage system and poly drains can prevent water from entering the basement and wherein one or more floor drains can each transport water to one or more sump basins to be pumped out of a basement and away from a building. The present basement drainage system can effectively remove ground water located below a basement floor as well as water collected on the surface of the basement floor, and prevent ground water from entering the basement.

Abstract: The basement wall reinforcement system comprises carbon fiber materials securely mounted to the wall being reinforced as well as to structural components at both the top and bottom of the wall. These additional connections at the top and bottom of the wall increase the capacity of the carbon fiber to prevent bowing and cracking by transferring lateral forces from the wall to these structural components. Such structural components can include foundations, basement floors, sill plates, rim joists and floor joists. The carbon fiber can be connected to these structural components by pins, epoxies and specially designed brackets.

Abstract: The basement wall reinforcement system comprises carbon fiber materials securely mounted to the wall being reinforced as well as to structural components at both the top and bottom of the wall. These additional connections at the top and bottom of the wall increase the capacity of the carbon fiber to prevent bowing and cracking by transferring lateral forces from the wall to these structural components. Such structural components can include foundations, basement floors, sill plates, rim joists and floor joists. The carbon fiber can be connected to these structural components by pins, epoxies and specially designed brackets.

Abstract: Disclosed are a method and a system for processing a semiconductor structure of the type including a substrate, a dielectric layer, and a TaN—Ta liner on the dielectric layer. The method comprises the step of using XeF2 to remove at least a portion of the TaN—Ta liner completely to the dielectric layer. In the preferred embodiments, the present invention uses XeF2 selective gas phase etching as alternatives to Ta—TaN Chemical Mechanical Polishing (CMP) as a basic “liner removal process” and as a “selective cap plating base removal process.” In this first use, XeF2 is used to remove the metal liner, TaN—Ta, after copper CMP. In the second use, the XeF2 etch is used to selectively remove a plating base (TaN—Ta) that was used to form a metal cap layer over the copper conductor.

Abstract: A collaborative traffic monitoring method is described. In an embodiment, a collaborative traffic monitoring system for use in a vehicle comprises an input for receiving GPS location data and a processing unit which generates speed data for a vehicle based on the received GPS location data. The system also includes a transmitter which broadcasts the speed data and a receiver which receives speed data broadcast by other vehicles. The received speed data is then used to display an indication of the road speeds ahead.

Abstract: A portable knockdown above ground watering system and method for establishing a new lawn is provided. The system includes a compact water manifold structure comprising a manifold housing having a water inlet in fluid communication with a plurality of water outlets, the manifold structure enclosed in a portable case. A plurality of solenoid actuated valves are connected adjacent to and in fluid communication with each of the water outlets. A plurality of sprinkler heads may be connected in fluid communication to the manifold structure with removably connected outlet hoses.

Abstract: A basement drainage system and method for its use comprising a combination of floor drains and poly drains, wherein each can transport water to one or more sump basins to be pumped out of a basement and away from a building. This basement drainage system can effectively remove ground water located below a basement floor as well as water that collect on the surface of the basement floor.

Abstract: The basement wall reinforcement system comprises carbon fiber materials securely mounted to the wall being reinforced as well as to structural components at both the top and bottom of the wall. These additional connections at the top and bottom of the wall increase the capacity of the carbon fiber to prevent bowing and cracking by transferring lateral forces from the wall to these structural components. Such structural components can include foundations, basement floors, sill plates, rim joists and floor joists. The carbon fiber can be connected to these structural components by pins, epoxies and specially designed brackets.

Abstract: A seamless wall finishing system has a plurality of wall panels which are spaced apart from an exterior wall. The spacing creates an air gap which provides an airflow passage between the exterior wall and the second surface of the wall panels. The wall panels have a mold resistant non-organic thread or yarn wall covering which is adhered to a central portion of a first surface of each of the wall panels. The wall panels define a pair of uncovered areas on opposite sides of each of the plurality of wall panels. A vertically extending seam is created between adjacent wall panels which is filled with a seam tape made from the mold resistant nylon yarn wall covering. An air circulation system is provided for circulating air behind the wall panels. A method of assembling the modular basement wall finishing system is also provided.

Abstract: A microelectronic structure, and in particular a semiconductor structure, includes a substrate that includes an alignment mark comprising a substantially present element that has an atomic number at least 5 greater than a highest atomic number substantially present element within the substrate. Alignment to the alignment mark may be effected using an electron beam as an alignment beam with respect to both a direct write exposure and a reticle filtered optical exposure of a mask layer (i.e., photoresist mask layer) located over the alignment mark and the substrate. The electron beam alignment beam may effectively penetrate through other layers, including conductor layers comprising elements having appropriately low atomic number, located interposed between the alignment mark and the mask layer.

Abstract: A microelectronic structure, and in particular a semiconductor structure, includes a substrate that includes an alignment mark comprising a substantially present element that has an atomic number at least 5 greater than a highest atomic number substantially present element within the substrate. Alignment to the alignment mark may be effected using an electron beam as an alignment beam with respect to both a direct write exposure and a reticle filtered optical exposure of a mask layer (i.e., photoresist mask layer) located over the alignment mark and the substrate. The electron beam alignment beam may effectively penetrate through other layers, including conductor layers comprising elements having appropriately low atomic number, located interposed between the alignment mark and the mask layer.

Abstract: Disclosed are a method and a system for processing a semiconductor structure of the type including a substrate, a dielectric layer, and a TaN—Ta liner on the dielectric layer. The method comprises the step of using XeF2 to remove at least a portion of the TaN—Ta liner completely to the dielectric layer. In the preferred embodiments, the present invention uses XeF2 selective gas phase etching as alternatives to Ta—TaN Chemical Mechanical Polishing (CMP) as a basic “liner removal process” and as a “selective cap plating base removal process.” In this first use, XeF2 is used to remove the metal liner, TaN—Ta, after copper CMP. In the second use, the XeF2 etch is used to selectively remove a plating base (TaN—Ta) that was used to form a metal cap layer over the copper conductor.

Abstract: Disclosed are a method and a system for processing a semiconductor structure of the type including a substrate, a dielectric layer, and a TaN—Ta liner on the dielectric layer. The method comprises the step of using XeF2 to remove at least a portion of the TaN—Ta liner completely to the dielectric layer. In the preferred embodiments, the present invention uses XeF2 selective gas phase etching as alternatives to Ta—TaN Chemical Mechanical Polishing (CMP) as a basic “liner removal process” and as a “selective cap plating base removal process.” In this first use, XeF2 is used to remove the metal liner, TaN—Ta, after copper CMP. In the second use, the XeF2 etch is used to selectively remove a plating base (TaN—Ta) that was used to form a metal cap layer over the copper conductor.

Abstract: In a camera and method, a first electronic image is captured and stored in memory. A second electronic image is then captured. The second electronic image replaces the first electronic image in memory when the camera does not have a film unit loaded and the memory has capacity for storing both images. The second electronic image is stored in memory with the first electronic image when the camera has a film unit loaded and the memory has capacity for storing both images.