Patents by Inventor Robert M. Farrell, Jr.

Robert M. Farrell, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices
    Patent number: 10529892
    Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.
    Type: Grant
    Filed: September 7, 2017
    Date of Patent: January 7, 2020
    Assignees: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Japan Science and Technology Agency
    Inventors: Robert M. Farrell, Jr., Troy J. Baker, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison, Rajat Sharma, Umesh K. Mishra, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N THIN FILMS, HETEROSTRUCTURES, AND DEVICES
    Publication number: 20180013035
    Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.
    Type: Application
    Filed: September 7, 2017
    Publication date: January 11, 2018
    Applicants: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Japan Science and Technology Agency
    Inventors: Robert M. Farrell, JR., Troy J. Baker, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison, Rajat Sharma, Umesh K. Mishra, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices
    Patent number: 9793435
    Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.
    Type: Grant
    Filed: November 30, 2015
    Date of Patent: October 17, 2017
    Assignees: The Regents of the University of California, Japan Science and Technology Agency
    Inventors: Robert M. Farrell, Jr., Troy J. Baker, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison, Rajat Sharma, Umesh K. Mishra, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices
    Patent number: 9231376
    Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.
    Type: Grant
    Filed: March 28, 2014
    Date of Patent: January 5, 2016
    Assignees: The Regents of the University of California, Japan Science and Technology Agency
    Inventors: Robert M. Farrell, Jr., Troy J. Baker, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison, Rajat Sharma, Umesh K. Mishra, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N THIN FILMS, HETEROSTRUCTURES, AND DEVICES
    Publication number: 20140211820
    Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.
    Type: Application
    Filed: March 28, 2014
    Publication date: July 31, 2014
    Applicants: Japan Science and Technology Agency, The Regents of the University of California
    Inventors: Robert M. Farrell, JR., Troy J. Baker, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison, Rajat Sharma, Umesh K. Mishra, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices
    Patent number: 8686466
    Abstract: A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.
    Type: Grant
    Filed: November 23, 2010
    Date of Patent: April 1, 2014
    Assignees: The Regents of the University of California, Japan Science and Technology Agency
    Inventors: Robert M. Farrell, Jr., Troy J. Baker, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison, Rajat Sharma, Umesh K. Mishra, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (GA,AL,IN,B)N THIN FILMS, HETEROSTRUCTURES, AND DEVICES
    Publication number: 20110062449
    Abstract: A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.
    Type: Application
    Filed: November 23, 2010
    Publication date: March 17, 2011
    Applicants: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Robert M. Farrell, JR., Troy J. Baker, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison, Rajat Sharma, Umesh Kumar Mishra, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices
    Patent number: 7846757
    Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.
    Type: Grant
    Filed: June 1, 2006
    Date of Patent: December 7, 2010
    Assignees: The Regents of the University of California, Japan Science and Technology Agency
    Inventors: Robert M. Farrell, Jr., Troy J. Baker, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison, Rajat Sharma, Umesh Kumar Mishra, Steven P. DenBaars, James S. Speck, Shuji Nakamura