Patents by Inventor Robert M. Folsom

Robert M. Folsom has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating random access memory device
    Patent number: 4240845
    Abstract: A dynamic random access memory is fabricated on a monolithic chip of semiconductor material. The memory is formed of an array of memory cells controlled for reading and writing by word and bit lines which are selectively connected to the cells. Each cell is a single field effect transistor structure having improved electrical charge storage capability. The improved charge storage capability of each cell is provided by an electrical capacitance structure uniquely arranged and formed as an integral portion of the field effect transistor structure. The gate electrode of each field effect transistor structure is connected to a predetermined one of said word lines. The drain of each field effect transistor is connected to a predetermined one of said bit lines. The source of each field effect transistor structure is integrally connected to and forms a portion of the uniquely arranged electrical capacitance structure of the field effect transistor structure.
    Type: Grant
    Filed: February 4, 1980
    Date of Patent: December 23, 1980
    Assignee: International Business Machines Corporation
    Inventors: Ronald P. Esch, Robert M. Folsom, Cheng-Yih Liu, Vincent L. Rideout, Donald A. Soderman, George T. Wenning
  • One-device monolithic random access memory and method of fabricating same
    Patent number: 4219834
    Abstract: A dynamic random access memory is fabricated on a monolithic chip of semiconductor material. The memory is formed of an array of memory cells controlled for reading and writing by word and bit lines which are selectively connected to the cells. Each cell is a single field effect transistor structure having improved electrical charge storage capability. The improved charge storage capability of each cell is provided by an electrical capacitance structure uniquely arranged and formed as an integral portion of the field effect transistor structure. The gate electrode of each field effect transistor structure is connected to a predetermined one of said word lines. The drain of each field effect transistor is connected to a predetermined one of said bit lines. The source of each field effect transistor structure is integrally connected to and forms a portion of the uniquely arranged electrical capacitance structure of the field effect transistor structure.
    Type: Grant
    Filed: November 11, 1977
    Date of Patent: August 26, 1980
    Assignee: International Business Machines Corporation
    Inventors: Ronald P. Esch, Robert M. Folsom, Cheng-Yih Liu, Vincent L. Rideout, Donald A. Soderman, G. Thomas Wenning