Abstract: Spatially localized radiation, preferably ultraviolet visible radiation, representing information is impinged onto a spatially localized area of a heterostructure comprising a ternary Group III-V Nitride semiconductor material. It has been found that the spatially localized optical radiation reversibly changes the properties of the heterostructure comprising ternary Group III-V Nitride semiconductor material in the spatially localized area, to thereby provide an optical memory. The stored information can be read from the memory by impinging blanket radiation, preferably ultraviolet radiation of the same frequency which was used to write the information, onto the heterostructure comprising ternary Group III-V Nitride semiconductor material including onto the spatially localized area thereof.

Abstract: An integrated quantum well laser structure which has a plurality of quantum well lasers for providing a plurality of light beams each having a different wavelength for use in wavelength division multiplexing.

Abstract: An integrated quantum well laser structure which has a plurality of quantum well lasers for providing a plurality of light beams each having a different wavelength for use in wavelength division multiplexing.

Abstract: Integration of optoelectronic component and electronic components in a planar surface of a semi-insulating substrate such as gallium arsenide. A depression is etched into the planar surface to contain the transverse junction stripe laser structure which is grown by epitaxial layers. In the resulting structure the surface of the epitaxial layers forms a portion of the planar surface, thus placing the electrical and optical elements on or at the planar surface to facilitate fabrication and testing.