Abstract: A reversible threaded fastener system which provides holding of a nut in a f ully conjoined state with respect to a bolt, yet the interrelationship therebetween is fully reversible and is accomplished without friction and without inelastic deformation. Included is a bolt having a threaded shank, a nut having a threaded bore for being threadably engaged on the threaded shank of the bolt, and a washer non-rotatably interfaced with the shank and provided with a plurality of radial washer waves. The washer is held in non-rotatable relation with respect to the bolt by the shank and the bore of the washer being mutually asymmetric. In a first preferred embodiment, the inner face of the nut is provided with a plurality of radial nut waves which correspond to the washer waves, and the washer is resiliently deformable.

Abstract: An electromagnetic radiation transducer is provided having a p-type ZnSe layer and an n-type layer. The p-type ZnSe layer has a net donor to net acceptor ratio (N.sub.D /N.sub.A) of less than or equal to about 0.8. The net acceptor concentration is greater than about 5.times.10.sup.15 cm .sup.-3 and the resistivity is less than 15 .OMEGA.-cm. The p-type ZnSe layer is deposited by doping the ZnSe during fabrication with a neutral free-radical source.

Abstract: A method and apparatus for enhanced doping of IIB-VIA semiconductors through the use of a free-radical source is described. The process involves the simultaneous production of beams of free-radicals together with group IIB molecules or atoms and group VIA molecules or atoms in a standard molecular beam epitaxy crystal growth system. These beams react on a substrate producing single crystal films of doped IIB-VIA semiconductors such as ZnSe:N, for example. The improved doping characteristics result from the high reactivity of radicals produced by the free-radical source with the surface of the growing crystal.