Abstract: The present invention relates to atom probe data and associated systems and methods. Aspects of the invention are directed toward a computing system configured to predict a characteristic associated with an atom probe specimen that includes a data set receiving component configured to receive a three-dimensional data set associated with a portion of the specimen. The system further includes a predicting/calculating component configured to predict the characteristic associated with the specimen based on the data set. Other aspects of the invention are directed toward a method for evaluating a manufacturing process using atom probe data that includes receiving a three-dimensional data set associated with a portion of a microelectronic assembly produced by a manufacturing process. The method further includes determining a variation between the data set and a configuration expected to result from the manufacturing process.

Abstract: The present invention relates to treatments for atom probe components. For example, certain aspects are directed toward processes for treating an atom probe component that includes removing material from a surface of the atom probe component (e.g., using an ion beam, a plasma, a chemical etching process, and/or photonic energy). Another aspect of the invention is directed toward a method for treating an atom probe specimen that includes using a computing device to automatically control a voltage used in an ion sputtering process. Still other aspects of the invention are directed toward methods for treating an atom probe component that includes introducing photonic energy proximate to a surface of the atom probe component, annealing at least a portion of a surface of the atom probe component, coating at least a portion of a surface of the atom probe component, and/or cooling at least a portion of the atom probe component.

Abstract: A method for treating an atom probe electrode (120), which comprises the steps of providing an atom electrode (120) having a surface (123) and an aperture (122); and removing material (604) from the surface (123) to reduce a potential of the atom probe electrode creating a non-uniformity in an electric field (502) when the atom probe electrode is used in a atom probe device during specimen analysis.

Abstract: An improved chemical mechanical polishing apparatus for polishing a semiconductor wafer used in the fabrication of silicon-based semiconductor devices is provided so as to eliminate an air pocket bubble from being formed underneath a polishing pad without the need for cutting the same. This is achieved by a CMP platen plug which is disposed in a recess formed in a top cover plate member so as to completely fill the recess in order to displace the air pocket. The polishing pad is then secured over the platen plug and the top cover plate member. As a result, the useful life of the polishing pad has been prolonged.