Abstract: The present invention relates to a novel use of cryoelectronic equipment to implement an extremely sensitive and stable receiver front end for UHF, microwave, and millimeter wave applications. The invention is particularly applicable to base station receivers in mobile radio systems, where the range and capacity of the systems are typically limited by the base station receiver sensitivity.

Abstract: The present invention relates to a novel use of cryoelectronic equipment to implement an extremely sensitive and stable receiver front end for UHF, microwave, and millimeter wave applications. The invention is particularly applicable to base station receivers in mobile radio systems, where the range and capacity of the systems are typically limited by the base station receiver sensitivity.

Abstract: The present invention relates to a novel use of cryoelectronic equipment to implement an extremely sensitive and stable receiver front end for UHF, microwave, and millimeter wave applications. The invention is particularly applicable to base station receivers in mobile radio systems, where the range and capacity of the systems are typically limited by the base station receiver sensitivity.

Abstract: The present invention relates to a novel use of cryoelectronic equipment to implement an extremely sensitive and stable receiver front end for UHF, microwave, and millimeter wave applications. The invention is particularly applicable to base station receivers in mobile radio systems, where the range and capacity of the systems are typically limited by the base station receiver sensitivity.

Abstract: The present invention relates to a tuneable fringe effect capacitor for conducting radio frequency energy. The capacitor includes a thin film of ferroelectric material, a pair of films of a conductive material deposited on the ferroelectric film with a gap between the films, and a substrate for the ferroelectric material and the conductive films. The capacitance value across the gap is varied by applying a voltage to the ferroelectric material and thereby altering the dielectric constant of the ferroelectric material.

Abstract: The disclosure relates to ferroelectric and superconducting thin films used in combination to produce low-loss passive microwave and millimeter wave devices which are frequency tuneable. Various metal oxide superconducting and ferroelectric thin films can be deposited in numerous multilayer geometries via a variety of deposition techniques to produce devices which can manipulate microwave and millimeter wave signals through the application of voltage bias signals across the ferroelectric films. Numerous superconducting microwave and millimeter wave devices, including delay lines, phase shifters, resonators, oscillators, filters, electrically-small antennas, half-loop antennas, directional couplers, patch antennas, and various radiative gratings, are made frequency-tuneable by utilizing voltage-tuneable capacitor structures fabricated from voltage-biased ferroelectric thin films.

Abstract: The disclosure relates to ferroelectric and superconducting thin films used in combination to produce low-loss passive microwave and millimeter wave devices which are frequency tuneable. Various metal oxide superconducting and ferroelectric thin films can be deposited in numerous multilayer geometries via a variety of deposition techniques to produce devices which can manipulate microwave and millimeter wave signals through the application of voltage bias signals across the ferroelectric films. Numerous superconducting microwave and millimeter wave devices, including delay lines, phase shifters, resonators, oscillators, filters, electrically-small antennas, half-loop antennas, directional couplers, patch antennas, and various radiative gratings, are made frequency-tuneable by utilizing voltage-tuneable capacitor structures fabricated from voltage-biased ferroelectric thin films.