Abstract: A method of integrating a phase change switch (PCS) into a Bipolar (Bi)/Complementary Metal Oxide Semiconductor (CMOS) (BiCMOS) process, comprises providing a base structure including BiCMOS circuitry on a semiconductor substrate, and forming on the base structure a dielectric contact window layer having metal through-plugs that contact the BiCMOS circuitry. The method includes constructing the PCS on the contact window layer. The PCS includes: a phase change region, between ohmic contacts on the phase change region, to operate as a switch controlled by heat. The method further includes forming, on the contact window layer and the PCS, a stack of alternating patterned metal layers and dielectric layers that interconnect the patterned metal layers, such that the stack connects a first of the ohmic contacts to the BiCMOS circuitry and provides connections to a second of the ohmic contacts and to the resistive heater.

Abstract: A system for adjusting the firmness of a substrate configured to support a subject includes a first rod configured to be movable by a mechanism, a second rod parallel to and spaced from the first rod a distance that spans a majority of a dimension of the substrate, and flexible straps extending between the first rod and the second rod and attached to the first rod and the second rod at respective ends of each flexible strap. The mechanism is configured to move the first rod in a first direction to increase tension on the flexible straps and move the first rod in a second direction to decrease tension on the flexible straps. The mechanism can be manually operated by the subject or can be a motor that is controlled by a controller.

Abstract: The present disclosure provides a core-sheath filament. The core-sheath filament includes an adhesive core and a non-tacky sheath, wherein the sheath exhibits a melt flow index of less than 15 grams per 10 minutes. The present disclosure also provides a method of printing an adhesive. The method includes a) melting a core-sheath filament in a nozzle to form a molten composition, and b) dispensing the molten composition through the nozzle onto a substrate. Steps a) and b) are carried out one or more times to form a printed adhesive. The core-sheath filament includes an adhesive core and a non-tacky sheath. Further, methods are provided, including receiving, by a manufacturing device having one or more processors, a digital object comprising data specifying an article; and generating, with the manufacturing device by an additive manufacturing process using a core-sheath filament, the article including a printed adhesive based on the digital object.

Abstract: System and method are provided where parcels or packages are associated or grouped, into logical group or logical containerization of parcels or packages, without need for physical container, such that parcels or packages can be tracked as a group, for example with a unique group ID. Logical group may be tracked within specified logical zone on conveyor, transported, sorted and/or otherwise processed as unique logical group without need to be contained in physical container. System and method for automated sortation can accumulate set number or set volume of packages, and then process the accumulated set number or volume of packages, including automatically closing a container filled with the packages.

Abstract: A method of integrating a phase change switch (PCS) into a Bipolar (Bi)/Complementary Metal Oxide Semiconductor (CMOS) (BiCMOS) process, comprises providing a base structure including BiCMOS circuitry on a semiconductor substrate, and forming on the base structure a dielectric contact window layer having metal through-plugs that contact the BiCMOS circuitry. The method includes constructing the PCS on the contact window layer. The PCS includes: a phase change region, between ohmic contacts on the phase change region, to operate as a switch controlled by heat. The method further includes forming, on the contact window layer and the PCS, a stack of alternating patterned metal layers and dielectric layers that interconnect the patterned metal layers, such that the stack connects a first of the ohmic contacts to the BiCMOS circuitry and provides connections to a second of the ohmic contacts and to the resistive heater.

Abstract: A method of integrating a phase change switch (PCS) into a Bipolar (Bi)/Complementary Metal Oxide Semiconductor (CMOS) (BiCMOS) process, comprises providing a base structure including BiCMOS circuitry on a semiconductor substrate, and forming on the base structure a dielectric contact window layer having metal through-plugs that contact the BiCMOS circuitry. The method includes constructing the PCS on the contact window layer. The PCS includes: a phase change region, between ohmic contacts on the phase change region, to operate as a switch controlled by heat. The method further includes forming, on the contact window layer and the PCS, a stack of alternating patterned metal layers and dielectric layers that interconnect the patterned metal layers, such that the stack connects a first of the ohmic contacts to the BiCMOS circuitry and provides connections to a second of the ohmic contacts and to the resistive heater.

Abstract: A superconductor thermal filter is disclosed that includes a normal metal layer having a first side, an insulating layer overlying the first side of the normal metal layer, and a multilayer superconductor structure having a first side overlying a side of the insulating layer opposite the side that overlies the normal metal layer. The multilayer superconductor structure is comprised of a plurality of superconductor layers with each superconductor layer having a smaller superconducting energy band gap than the preceding superconductor as the superconductor layers extend away from the normal metal layer. The thermal filter further includes a normal metal layer quasiparticle trap having a first side and a second side with the first side being disposed on a second side of the multilayer superconductor. A bias voltage is applied between the normal metal layer and the normal metal layer quasiparticle trap to remove hot electrons from the normal metal layer.

Abstract: A solid state cooler device is disclosed that includes a first superconductor shunt, a first normal metal pad disposed on the first superconductor shunt, and a first insulator layer and a second insulator layer disposed on the normal metal pad and separated from one another by a gap. The solid state cooler device also includes a first superconductor pad disposed on the first insulator layer and a second superconductor pad disposed on the second insulator layer, a first conductive pad coupled to the first superconductor pad, and a second conductive pad coupled to the second superconductor pad. Hot electrons are removed from the first normal metal pad when a bias voltage is applied between the first conductive pad and the second conductive pad, wherein the first superconductor shunt facilitates even current distribution through the device.

Abstract: A superconductor thermal filter is disclosed that includes a normal metal layer having a first side, an insulating layer overlying the first side of the normal metal layer, and a multilayer superconductor structure having a first side overlying a side of the insulting layer opposite the side that overlies the normal metal layer. The multilayer superconductor structure is comprised of a plurality of superconductor layers with each superconductor layer having a smaller superconducting energy band gap than the preceding superconductor as the superconductor layers extend away from the normal metal layer. The thermal filter further includes a normal metal layer quasiparticle trap having a first side and a second side with the first side being disposed on a second side of the multilayer superconductor. A bias voltage is applied between the normal metal layer and the normal metal layer quasiparticle trap to remove hot electrons from the normal metal layer.

Abstract: A method of integrating a phase change switch (PCS) into a Bipolar (Bi)/Complementary Metal Oxide Semiconductor (CMOS) (BiCMOS) process, comprises providing a base structure including BiCMOS circuitry on a semiconductor substrate, and forming on the base structure a dielectric contact window layer having metal through-plugs that contact the BiCMOS circuitry. The method includes constructing the PCS on the contact window layer. The PCS includes: a phase change region, between ohmic contacts on the phase change region, to operate as a switch controlled by heat. The method further includes forming, on the contact window layer and the PCS, a stack of alternating patterned metal layers and dielectric layers that interconnect the patterned metal layers, such that the stack connects a first of the ohmic contacts to the BiCMOS circuitry and provides connections to a second of the ohmic contacts and to the resistive heater.

Abstract: The disclosure relates to a high purity 2H-SiC composition and methods for making same. The embodiments represented herein apply to both thin film and bulk growth of 2H-SiC. According to one embodiment, the disclosure relates to doping an underlying substrate or support layer with one or more surfactants to nucleate and grow high purity 2H-SiC. In another embodiment, the disclosure relates to a method for preparing 2H-SiC compositions by nucleating 2H-SiC on another SiC polytype using one or more surfactants. The surfactants can include AlN, Te, Sb and similar compositions. These nucleate SiC into disc form which changes to hexagonal 2H-SiC material.

Abstract: One example discloses a heat transfer device that can comprise a semiconductor material having a first region and a second region. The first region and the second region are doped to propel a charged carrier from the first region to the second region. The heat transfer device can also comprise an array of pointed tips thermoelectrically communicating with the second region. A heat sink faces the array, and a vacuum tunneling region is formed between the pointed tips and the heat sink. The heat transfer device further can further comprise a power source for biasing the heat sink with respect to the first region. The first region defines an N-type semiconductor material and the second region defines a P-type semiconductor material.

Abstract: The disclosure relates to a Point Cooler based on a combination of principles, including large area, low current density PN junction cooling, and electron emission from heavily doped shallowly-depleted P tips. Using Junction Cooling rather than thermoelectric cooling enables an all silicon device to be made that favorably competes with the commercial thermoelectric cooling systems. Theoretical values of THOT/TCOLD of 6 or more (in contrast to about 1.5 for other solid state refrigerators) predict this single-stage solid state vacuum electronic cooler can approach 50K at light loading, significantly lower than conventional Bismuth Telluride based thermo electrics. The high Z values for PN junction cooling with wire connection and Tunnel heat extraction opens up solid state vibration-less form fit and function replacement cooling.

Abstract: A MEMS device having a support frame positioned on a substrate surrounding a first electrode. A rigid flange portion at the top of the support frame is closely space from, and is connected to, a second electrode by relatively short spring members. RF conductors connected to respective first and second electrodes complete an RF switch. A dielectric layer on the first electrode forms a capacitive type device and includes an electrostatic shield layer on its surface. This electrostatic shield layer is connected to ground by a multi megohm bleeder resistance.

Abstract: A micro-machined vacuum pump is provided which may be utilized with microsensors. The pump in accordance with the present invention is preferably fabricated within a semiconductor substrate and utilizes thermal transpiration to provide compression. The pump has a plurality of flow chambers and a plurality of flow tubes to interconnect the flow chambers. The pump additionally includes means for creating a temperature differential between a first end and a second end of each flow tube to draw the gas therethrough. Drawing the gas through the flow tube increases the pressure within an adjacent flow chamber and induces a pumping action.

Abstract: A gas ionizer is provided for use in a solid state mass spectrograph for analyzing a sample of gas. The gas ionizer is located in a cavity provided in a semiconductor substrate which includes an inlet for introducing the gas to be analyzed. The gas ionizer ionizes the sample of gas drawn into the cavity through the inlet to generate an ionized sample gas. The gas ionizer generates energetic particles or photons which bombard the gas to be sampled to produce ionized gas. The energetic particles or photons can be generated by reverse-bias p-n junctions, radioactive isotopes, electron discharges, point emitters, and thermionic electron emitters. A layer of cesium chloride or cesium iodide having a low work function is formed on top of the reverse-bias p-n junction gas ionizer to increase current emitted per junction area and so that the gas ionizer can be exposed to atmospheric oxygen during storage and can operate in reduced atmosphere with no additional treatments.

Abstract: A pump is provided for use in a solid state mass-spectrograph for analyzing a sample gas. The spectrograph is formed from a semiconductor substrate having a cavity with an inlet, gas ionizing section adjacent the inlet, a mass filter section adjacent the gas ionizing section and a detector section adjacent the mass filter section. The pump is connected to each of the sections of said cavity and evacuates the cavity and draws the sample gas into the cavity. The pump includes at least one diaphragm and electrically-actuated resistor. The resistor generates heat upon electrical actuation thereby causing the diaphragm to accomplish a suction stroke which evacuates the cavity and draws the sample gas into the cavity. Preferably, the diaphragm is formed from a bilayered metal material having different thermal expansion rates or from a shape memory alloy.

Abstract: A mass filter is provided for use in a solid state mass spectrograph for analyzing a sample of gas. The mass filter is located in a cavity provided in a semiconductor substrate. The mass filter generates an electromagnetic field in the cavity which filters by mass/charge ratio an ionized portion of the sample of gas. The substrate has an inlet through which the gas to be analyzed flows through prior to reaching the mass filter. The mass filter can be either a single-focussing Wien filter or magnetic sector filter or can be a double-focussing filter which uses both an electric field and a magnetic field to separate the ions.

Abstract: A method for forming a solid state mass spectrograph for analyzing a sample gas is provided in which a plurality of cavities are formed in a substrate, preferably, a semiconductor. Each of these cavities forms a chamber into which a different component of the mass spectrograph is provided. A plurality of orifices are formed between each of the cavities, forming an interconnecting passageway between each of the chambers. A dielectric layer is provided inside the cavities to serve as a separator between the substrate and electrodes to be later deposited in the cavity. An ionizer is provided in one of the cavities and an ion detector is provided in another of the cavities. The formed substrate is provided in a circuit board which contains interfacing and controlling electronics for the mass spectrograph. Preferably, the substrate is formed in two halves and the chambers are formed in a corresponding arrangement in each of the substrate halves.

Abstract: A pump is provided for use in a solid state mass-spectrograph for analyzing a sample gas. The spectrograph is formed from a semiconductor substrate having a cavity with an inlet, gas ionizing section adjacent the inlet, a mass filter section adjacent the gas ionizing section and a detector section adjacent the mass filter section. The pump is connected to each of the sections of said cavity and evacuates the cavity and draws the sample gas into the cavity. The pump includes at least one piezoelectrically-actuated diaphragm. Upon piezoelectrical actuation, the diaphragm accomplishes a suction stroke which evacuates the cavity and draws the sample gas into the cavity. Preferably, the diaphragm is formed from a pair of electrodes sandwiching a piezoelectric layer.