Abstract: A method and system of selectively identifying at risk die based on location within the reticle. Reticle and stepping information is stored in a database. All reticle shots in a wafer and in a lot are overlaid on top of each other. The reticle and stepping information is used to calculate pass/fail or specific bin yield of reticle fields. It is determined if the yield of some reticle locations is below a statistical measure by a pre-determined threshold, and if so, all the die in that location are downgraded. The statistical value to compare against does not have to be based on the reticle alone. It can be a wafer of lot level statistic. The process can be applied at a lot or wafer level, or both.

Abstract: A method for a modified binary search includes steps of: selecting a parameter having a distribution of values, selecting a probability density function representative of the distribution of values of the selected parameter, defining a substantially equal probability weighted binary test interval from the probability density function for each of a selected number of test intervals over a selected test range, translating the weighted binary test intervals to obtain a highest resolution at a target point of the selected parameter, and skewing the translated and weighted binary test intervals by a selected scaling function to generate a modified binary test interval for each of the selected number of test intervals over the selected test range.

Abstract: A method of testing integrated circuits. Each of the integrated circuits is tested with a first test at a first level of testing at a preceding testing step in a fabrication cycle of the integrated circuits to produce first test results associated with a first characteristic of the integrated circuits. The first test results are recorded with associated integrated circuit identification information. The integrated circuits are logically subdivided into bins based at least in part on the associated integrated circuit identification information. A defectivity value is calculated for each bin of subdivided integrated circuits based at least in part on the first test results recorded with the associated integrated circuit identification information.

Abstract: A method and system of selectively identifying at risk die based on location within the reticle. Reticle and stepping information is stored in a database. All reticle shots in a wafer and in a lot are overlaid on top of each other. The reticle and stepping information is used to calculate pass/fail or specific bin yield of reticle fields. It is determined if the yield of some reticle locations is below a statistical measure by a pre-determined threshold, and if so, all the die in that location are downgraded. The statistical value to compare against does not have to be based on the reticle alone. It can be a wafer of lot level statistic. The process can be applied at a lot or wafer level, or both.

Abstract: A method of detecting spatially correlated variations that may be used for detecting statistical outliers in a production lot of integrated circuits to increase the average service life of the production lot includes measuring a selected parameter of each of a plurality of electronic circuits replicated on a common surface; calculating a difference between a value of the selected parameter at a target location and a value of the selected parameter an identical relative location with respect to the target location for each of the plurality of electronic circuits to generate a distribution of differences; calculating an absolute value of the distribution of differences; and calculating an average of the absolute value of the distribution of differences to generate a representative value for the residual for the identical relative location.

Abstract: A method of inspecting a subject integrated circuit. A set of historical integrated circuits is inspected to detect defects and produce historical data. Features of the historical integrated circuits that have an occurrence of defects that is greater than a given limit are designated as high risk features, based on the historical data. Locations of the high risk features are identified on the subject integrated circuit. The locations of the high risk features are input into an inspection tool, and the locations of the high risk features on the integrated circuit are inspected to at least one of detect defects and measure critical dimensions, and produce subject data.

Abstract: A method of inspecting a subject integrated circuit. A set of historical integrated circuits is inspected to detect defects and produce historical data. Features of the historical integrated circuits that have an occurrence of defects that is greater than a given limit are designated as high risk features, based on the historical data. Locations of the high risk features are identified on the subject integrated circuit. The locations of the high risk features are input into an inspection tool, and the locations of the high risk features on the integrated circuit are inspected to at least one of detect defects and measure critical dimensions, and produce subject data.

Abstract: A method of adaptively testing electronic circuits based on fabrication data includes steps for receiving as input fabrication data of the electronic circuits from at least one of electrical test and in-line inspection; calculating a process capability from the fabrication data; and selecting a test selection program based on the process capability to minimize testing cost and to verify performance specifications.

Abstract: A method for adaptively providing parametric limits to identify defective die quantizes the die into a plurality of groups according to statistical distributions, such as intrinsic speed in one embodiment. For each quantization level, an intrinsic distribution of the parameter is derived. Adaptive screening limits are then set as a function of the intrinsic distribution. Dies are then screened according to their parametric values with respect to the adaptive limits.

Abstract: A method for a modified binary search includes steps of: selecting a parameter having a distribution of values, selecting a probability density function representative of the distribution of values of the selected parameter, defining a substantially equal probability weighted binary test interval from the probability density function for each of a selected number of test intervals over a selected test range, translating the weighted binary test intervals to obtain a highest resolution at a target point of the selected parameter, and skewing the translated and weighted binary test intervals by a selected scaling function to generate a modified binary test interval for each of the selected number of test intervals over the selected test range.

Abstract: A method of testing integrated circuits. Each of the integrated circuits is tested with a first test at a first level of testing at a preceding testing step in a fabrication cycle of the integrated circuits to produce first test results associated with a first characteristic of the integrated circuits. The first test results are recorded with associated integrated circuit identification information. The integrated circuits are logically subdivided into bins based at least in part on the associated integrated circuit identification information. A defectivity value is calculated for each bin of subdivided integrated circuits based at least in part on the first test results recorded with the associated integrated circuit identification information.

Abstract: A method of detecting spatially correlated variations that may be used for detecting statistical outliers in a production lot of integrated circuits to increase the average service life of the production lot includes measuring a selected parameter of each of a plurality of electronic circuits replicated on a common surface; calculating a difference between a value of the selected parameter at a target location and a value of the selected parameter an identical relative location with respect to the target location for each of the plurality of electronic circuits to generate a distribution of differences; calculating an absolute value of the distribution of differences; and calculating an average of the absolute value of the distribution of differences to generate a representative value for the residual for the identical relative location.

Abstract: A method of detecting spatially correlated variations that may be used for detecting statistical outliers in a production lot of integrated circuits to increase the average service life of the production lot includes measuring a selected parameter of each of a plurality of electronic circuits replicated on a common surface; calculating a difference between a value of the selected parameter at a target location and a value of the selected parameter an identical relative location with respect to the target location for each of the plurality of electronic circuits to generate a distribution of differences; calculating an absolute value of the distribution of differences; and calculating an average of the absolute value of the distribution of differences to generate a representative value for the residual for the identical relative location.

Abstract: A method of testing an integrated circuit. A first subset of test parameters is selected from a full set of test parameters designed to characterize given properties of the integrated circuit. A first subset of devices in the integrated circuit is tested with the first subset of test parameters, using different input levels to determine an acceptable low input level and an acceptable high input level for the first subset of test parameters on the first subset of devices. At least a second subset of devices in the integrated circuit is tested, where the second subset of devices is greater in number than the first subset of devices. The test is accomplished with at least a second subset of test parameters using the acceptable low input level and the acceptable high input level, to determine whether the integrated circuit functions properly at the acceptable low input level and the acceptable high input level.

Abstract: A method of testing an integrated circuit. A first subset of test parameters is selected from a full set of test parameters designed to characterize given properties of the integrated circuit. A first subset of devices in the integrated circuit is tested with the first subset of test parameters, using different input levels to determine an acceptable low input level and an acceptable high input level for the first subset of test parameters on the first subset of devices. At least a second subset of devices in the integrated circuit is tested, where the second subset of devices is greater in number than the first subset of devices. The test is accomplished with at least a second subset of test parameters using the acceptable low input level and the acceptable high input level, to determine whether the integrated circuit functions properly at the acceptable low input level and the acceptable high input level.

Abstract: A method for identifying an integrated circuit having a latent defect. Test data corresponding to a set of integrated circuits is obtained, where the set of integrated circuits was processed on a single substrate. A subject integrated circuit is selected for analysis from within the set. A subset of integrated circuits is identified from within the set, where the subset includes integrated circuits that were located in close proximity on the substrate to the subject integrated circuit. The test data for the subset is analyzed to determine a defect parameter for the subset. The defect parameter for the subset is compared to a threshold. The subject integrated circuit is classified as having a latent defect when the defect parameter for the subset violates the threshold, and the subject integrated circuit is classified as not having a latent defect when the defect parameter for the subset does not violate the threshold.

Abstract: An apparatus for constructing a number of integrated circuits from a single substrate is provided by the present invention. A number of integrated circuits are constructed on the single substrate. The individual integrated circuits are then separated by cutting the substrate with a dicing saw. A vacuum chuck is used to grasp the individual integrated circuits while a back grinding process is performed on the individual circuits to polish the circuits to a predetermined thickness. The integrated circuits are then placed into integrated circuit packages. By performing the back grinding process after the substrate has been divided into the separate individual circuits, the present invention eliminates the need to back grind portions of the substrate that are not further used, and tends to eliminate handling of the fragile thinned substrate.

Abstract: A method of tracking information associated with an integrated circuit on a substrate after it has been diced. A set of parameters is collected during a first testing process. A first signature is determined for the integrated circuit, based on the set of parameters collected during the first testing process. The first signature and other information are associated with the integrated circuit. The integrated circuit is diced. The set of parameters is collected anew during a second testing process. A second signature is determined for the integrated circuit, based on the data set of parameters collected anew during the second testing process. The second signature is compared to multiple first signatures to locate the first signature that substantially matches the second signature. The other information associated with the first signature is associated with the diced integrated circuit.

Abstract: A method for identifying an integrated circuit having a latent defect. Test data corresponding to a set of integrated circuits is obtained, where the set of integrated circuits was processed on a single substrate. A subject integrated circuit is selected for analysis from within the set of integrated circuits. A subset of integrated circuits is identified from within the set of integrated circuits, where the subset of integrated circuits includes integrated circuits that were located in close proximity on the substrate to the subject integrated circuit. The test data for the subset of integrated circuits is analyzed to determine a defect parameter for the subset of integrated circuits. The defect parameter for the subset of integrated circuits is compared to a threshold.

Abstract: A method of testing an integrated circuit. The thermal energy of the integrated circuit to adjusted to a first temperature, and a first set of electrical characteristics of the integrated circuit are sensed at the first temperature. The first set of electrical characteristics are recorded in association with an identifier for the integrated circuit. The thermal energy of the integrated circuit is adjusted to a second temperature, and a second set of electrical characteristics of the integrated circuit are sensed at the second temperature. The electrical characteristics of the second set correspond to the electrical characteristics of the first set. The second set of electrical characteristics are also recorded in association with the identifier for the integrated circuit.